Umphumela we-silicon carbide diode enamandla aphezulu ku-PIN Photodetector

Umphumela we-silicon carbide diode enamandla aphezulu kuIsitholi sesithombe se-PIN

I-PIN diode ye-silicon carbide enamandla aphezulu ibilokhu ingenye yezindawo ezishisayo emkhakheni wocwaningo lwamadivayisi kagesi. I-PIN diode iyi-crystal diode eyakhiwe ngokuhlanganisa ungqimba lwe-semiconductor yangaphakathi (noma i-semiconductor enokungcola okuphansi) phakathi kwesifunda se-P+ nesifunda se-n+. I-i ku-PIN iyisifinyezo sesiNgisi sencazelo ye-"intrinsic", ngoba akunakwenzeka ukuba khona kwe-semiconductor emsulwa ngaphandle kokungcola, ngakho-ke ungqimba lwe-I lwe-PIN diode ekusetshenzisweni luxubene nenani elincane lokungcola kohlobo lwe-P noma uhlobo lwe-N. Njengamanje, i-PIN diode ye-silicon carbide isebenzisa kakhulu isakhiwo se-Mesa kanye nesakhiwo sendiza.

Uma imvamisa yokusebenza ye-PIN diode idlula i-100MHz, ngenxa yomphumela wokugcina wezinkampani ezimbalwa kanye nomphumela wesikhathi sokudlulisa ku-layer I, i-diode ilahlekelwa umphumela wokulungisa futhi iba yinto yokuvimbela, futhi inani layo lokuvimbela liyashintsha nge-voltage ye-bias. Ku-zero bias noma i-DC reverse bias, i-impedance esifundeni se-I iphezulu kakhulu. Ku-DC forward bias, isifunda se-I sibonisa isimo sokuvimbela esiphansi ngenxa yokujova kwenkampani. Ngakho-ke, i-PIN diode ingasetshenziswa njenge-variable impedance element, emkhakheni wokulawula i-microwave kanye ne-RF, kuvame ukudingeka ukusebenzisa amadivayisi okushintsha ukuze kufezwe ukushintsha kwesignali, ikakhulukazi kwezinye izikhungo zokulawula isignali ezinemvamisa ephezulu, ama-PIN diode anamakhono okulawula isignali ye-RF aphezulu, kodwa futhi asetshenziswa kabanzi ekushintsheni kwesigaba, ekushintsheni, ekukhawuleni nakwezinye izifunda.

I-silicon carbide diode enamandla aphezulu isetshenziswa kabanzi ensimini yamandla ngenxa yezici zayo zokumelana ne-voltage ephezulu, ikakhulukazi esetshenziswa njengeshubhu yokulungisa amandla aphezulu.I-PIN diodeine-voltage ephezulu ye-reverse critical breakdown VB, ngenxa yengqimba ye-doping i ephansi phakathi ephethe ukwehla kwe-voltage eyinhloko. Ukwandisa ukujiya kwe-zone I nokunciphisa ukuhlushwa kwe-doping kwe-zone Ngingathuthukisa ngempumelelo i-voltage ye-reverse breakdown ye-PIN diode, kodwa ukuba khona kwe-zone I kuzothuthukisa i-forward voltage drop VF yedivayisi yonke kanye nesikhathi sokushintsha kwedivayisi ngezinga elithile, futhi i-diode eyenziwe ngezinto ze-silicon carbide ingenza lokhu kuntuleka. I-Silicon carbide iphindwe kayishumi kunensimu kagesi ye-critical breakdown ye-silicon, ukuze ubukhulu be-silicon carbide diode I zone bungancishiswa bube yingxenye yeshumi ye-silicon tube, ngenkathi kugcinwa i-voltage ephezulu ye-breakdown, kuhlanganiswe nokushisa okuhle kwe-conductivity yezinto ze-silicon carbide, ngeke kube nezinkinga ezisobala zokushabalalisa ukushisa, ngakho-ke i-silicon carbide diode enamandla aphezulu isibe yidivayisi yokulungisa ebaluleke kakhulu emkhakheni we-electronics yamandla yesimanje.

Ngenxa yokuthi i-reverse leakage current yayo encane kakhulu kanye ne-carrier movement ephezulu, ama-silicon carbide diode aheha kakhulu emkhakheni wokutholwa kwe-photoelectric. I-leakage current encane inganciphisa i-dark current ye-detector futhi inciphise umsindo; I-high carrier movement ingathuthukisa ngempumelelo ukuzwela kwe-silicon carbide.Isitholi se-PIN(I-PIN Photodetector). Izici ezinamandla aphezulu zama-silicon carbide diodes zivumela ama-PIN detector ukuthi athole imithombo yokukhanya enamandla futhi asetshenziswa kabanzi ensimini yasemkhathini. I-silicon carbide diode enamandla aphezulu iye yanakwa ngenxa yezici zayo ezinhle kakhulu, futhi ucwaningo lwayo luye lwathuthukiswa kakhulu.