Umgomo kanye nesimo samanje sei-avalanche photodetector (I-APD photodetector) Ingxenye Yesibili
2.2 Isakhiwo se-chip ye-APD
Isakhiwo se-chip esiphusile siyisiqinisekiso esiyisisekelo samadivayisi asebenza kakhulu.Idizayini yesakhiwo ye-APD ibheka ngokuyinhloko i-RC isikhathi esingaguquki, ukuthwebula izimbobo lapho kuhlangana khona i-heterojunction, isikhathi sokuhamba kwenkampani yenethiwekhi ngokusebenzisa indawo yokuncipha nokunye.Ukuthuthukiswa kwesakhiwo sayo kufinyezwa ngezansi:
(1) Isakhiwo esiyisisekelo
Isakhiwo esilula kunazo zonke se-APD sisekelwe ku-PIN photodiode, isifunda se-P kanye nesifunda esingu-N zifakwe kakhulu, futhi uhlobo lwe-N noma uhlobo lwe-P oluxosha kabili indawo yethulwa endaweni engu-P eseduze noma isifunda esingu-N ukuze kukhiqizwe ama-electron esibili kanye nomgodi. amapheya, ukuze ubone ukukhuliswa kwe-photocurrent eyinhloko.Okwezinto ezisetshenziswayo zochungechunge lwe-InP, ngenxa yokuthi i-ionization coefficient yembobo yomthelela inkulu kune-coefficient ye-ionization yomthelela we-electron, indawo yokuzuzwa yedoping yohlobo lwe-N ivamise ukubekwa endaweni engu-P.Esimeni esihle, izimbobo kuphela zijova endaweni yokuzuza, ngakho lesi sakhiwo sibizwa ngokuthi isakhiwo esijovwe ngembobo.
(2) Ukumuncwa kanye nokuzuza kuyahlukaniswa
Ngenxa yezimpawu zegebe yebhendi ebanzi ye-InP (i-InP ithi 1.35eV futhi i-InGaAs ithi 0.75eV), i-InP ivamise ukusetshenziswa njengempahla yendawo yokuzuzwa kanye ne-InGaAs njengento yokumuncwa.
(3) Izinhlaka zokumuncwa, i-gradient kanye nenzuzo (i-SAGM) ziyaphakanyiswa ngokulandelana
Njengamanje, iningi lamadivayisi e-APD entengiso asebenzisa impahla ye-InP/InGaAs, i-InGaAs njengesendlalelo sokumuncwa, i-InP ngaphansi kwenkambu kagesi ephezulu (>5x105V/cm) ngaphandle kokuhlukaniswa, ingasetshenziswa njengempahla yendawo yokuthola.Kule nto, idizayini yale APD iwukuthi inqubo ye-avalanche yakheka ku-N-type InP ngokushayisana kwezimbobo.Uma kucatshangelwa umehluko omkhulu kugebe lebhendi eliphakathi kwe-InP ne-InGaAs, umehluko wezinga lamandla ongaba ngu-0.4eV kubhendi ye-valence wenza izimbobo ezikhiqizwe kusendlalelo sokumuncwa kwe-InGaAs zivimbe emaphethelweni e-heterojunction ngaphambi kokufinyelela isendlalelo sesiphindaphinda se-InP futhi isivinini sikhulu kakhulu. kuncishisiwe, okuholela esikhathini eside sokuphendula kanye nomkhawulokudonsa omncane wale APD.Le nkinga ingaxazululwa ngokungeza isendlalelo soguquko se-InGaAsP phakathi kwezinto ezimbili.
(4) Izinhlaka zokumuncwa, i-gradient, charge and gain (SAGCM) ziyaphakanyiswa ngokulandelana
Ukuze uqhubeke ulungisa ukusatshalaliswa kwenkundla kagesi kwesendlalelo sokumuncwa kanye nesendlalelo sokuzuza, isendlalelo sokushaja singeniswa ekwakhiweni kwedivayisi, okuthuthukisa kakhulu isivinini sedivayisi nokuphendula.
(5) Isakhiwo se-SAGCM esithuthukisiwe i-resonator (RCE).
Kumklamo ongcono kakhulu ongenhla wezitholi zendabuko, kufanele sibhekane neqiniso lokuthi ukujiya kongqimba lokumunca kuyisici esiphikisanayo ngesivinini sedivayisi nokusebenza kahle kwe-quantum.Ugqinsi oluncane longqimba olumuncayo lunganciphisa isikhathi sokuhamba senkampani yenethiwekhi, ngakho-ke kungatholwa umkhawulokudonsa omkhulu.Kodwa-ke, ngesikhathi esifanayo, ukuze kutholwe ukusebenza kahle kwe-quantum, ungqimba lokumuncwa ludinga ukushuba okwanele.Isixazululo sale nkinga singaba isakhiwo se-resonant cavity (RCE), okungukuthi, i-Bragg Reflector (DBR) esabalalisiwe iklanyelwe phansi nangaphezulu kwedivayisi.Isibuko se-DBR siqukethe izinhlobo ezimbili zezinto ezinenkomba ephansi ye-refractive kanye ne-refractive index ephezulu esakhiweni, futhi okubili kukhula ngokushintshana, futhi ukujiya kwesendlalelo ngasinye kuhlangabezana nobude begagasi besigameko obungu-1/4 ku-semiconductor.Isakhiwo se-resonator somtshina singahlangabezana nezidingo zejubane, ubukhulu bongqimba bokumuncwa bungenziwa buncane kakhulu, futhi ukusebenza kahle kwe-quantum kwe-electron kuyanda ngemva kokucabangela okuningana.
(6) Isakhiwo se-waveguide esihlanganisiwe somphetho (WG-APD)
Esinye isixazululo sokuxazulula ukungqubuzana kwemiphumela ehlukene yokujiya kongqimba lokumunca ngesivinini sedivayisi nokusebenza kahle kwe-quantum ukwethula uhlaka lwe-waveguide oluhlangene emaphethelweni.Lesi sakhiwo singena ekukhanyeni kusukela ohlangothini, ngoba ungqimba lokumunca lude kakhulu, kulula ukuthola ukusebenza kahle kwe-quantum ephezulu, futhi ngesikhathi esifanayo, ungqimba lokumunca lungenziwa lube mncane kakhulu, lunciphise isikhathi sokuhamba komthwali.Ngakho-ke, lesi sakhiwo sixazulula ukuncika okuhlukile komkhawulokudonsa nokusebenza kahle kogqinsi lwesendlalelo sokumuncwa, futhi kulindeleke ukuthi kuzuzwe izinga eliphezulu kanye ne-APD ephezulu ye-quantum.Inqubo ye-WG-APD ilula kunaleyo ye-RCE APD, eqeda inqubo yokulungiselela eyinkimbinkimbi yesibuko se-DBR.Ngakho-ke, kungenzeka kakhulu emkhakheni osebenzayo futhi kufanelekile ekuxhumekeni kwe-optical yendiza evamile.
3. Isiphetho
Ukuthuthukiswa kwe-avalanchei-photodetectorizinto zokwakha kanye namadivayisi kubuyekezwa.Amazinga e-ionization yama-electron kanye nembobo yezinto ze-InP asondelene nalawo e-InAlAs, okuholela enqubweni ephindwe kabili yama-symbion enkampani yenethiwekhi, okwenza isikhathi sokwakha i-avalanche sibe side futhi umsindo ukhuphuke.Uma kuqhathaniswa nezinto ezihlanzekile ze-InAlAs, i-InGaAs (P) /InAlAs kanye ne-In (Al) GaAs/InAlAs izakhiwo zequantum ze-quantum zinenani elikhuphukile lama-coefficient e-ionization yokushayisana, ngakho ukusebenza komsindo kungashintshwa kakhulu.Mayelana nesakhiwo, isakhiwo se-resonator esithuthukisiwe (i-RCE) ye-SAGCM kanye nesakhiwo se-waveguide esihlangene emaphethelweni (WG-APD) sithuthukiswa ukuze kuxazululwe ukungqubuzana kwemiphumela ehlukene yokujiya kongqimba bokumuncwa ngesivinini sedivayisi nokusebenza kahle kwe-quantum.Ngenxa yobunkimbinkimbi benqubo, ukusetshenziswa okungokoqobo okugcwele kwalezi zakhiwo ezimbili kudinga ukuqhubeka kucutshungulwe.
Isikhathi sokuthumela: Nov-14-2023