I-Rof Intensity Modulator i-thin film lithium niobate modulator 40G TFLN modulator

Incazelo emfushane:

Izinto ze-thin film lithium niobate on insulator (LNOI) zizuza njengefa izakhiwo ezinhle kakhulu ze-electro-optic zezinto ze-bulk lithium niobate, zinikeza ikhambi elisha lama-chip e-high-speed electro-optic modulator angahlanganiswa, ancishiswe, futhi abe nokusebenza kahle kokuguquguquka okuphezulu. Sithuthukise i-wideband, i-half wave voltage thin film LiNbO3 electro-optic modulator esuselwe ezintweni ze-LNOI. Umkhiqizo wethu unezici ezinhle kakhulu zokuzinza okuphezulu, ukulahlekelwa okuphansi kokufakwa, kanye nosayizi omncane, okuzuzisa kakhulu kunezimodulators ze-lithium niobate zendabuko, futhi unamathuba amaningi okusebenzisa ekuxhumaneni kwe-optical okusheshayo kanye namasimu e-microwave photonics.

Sithumelele i-imeyili LANDA

Imininingwane Yomkhiqizo

I-Rofea Optoelectronics inikeza imikhiqizo ye-Optical kanye ne-photonics Electro-optic modulators

Amathegi Omkhiqizo

Isici

Ububanzi bomkhawulokudonsa obuphezulu, ukulahlekelwa okuphansi, i-voltage yokushayela ephansi, usayizi omncane, ukuzinza okuphezulu

Insimu

Ukuxhumana kwe-optical okusheshayo, i-microwave photonics, i-radar, njll.

I-Rof EOM Intensity Modulator engu-20G ifilimu encane ye-lithium niobate modulator i-TFLN modulator

Ipharamitha

Pi-arameter	Sym	inkomba	Iyunithi
ubude besikhathi obusebenzayo	λ	1530~1565	nm
Ukulahlekelwa kokufakwa kokukhanya	IL	≤ 5.5 (Uhlobo 4.5)	dB
isilinganiso sokuphela	ER	≥ 25	dB
Ukulahleka kokubuya kokukhanya	RL	≤ -30	dB
Amandla aphezulu okufaka optical	P_in	≤ 200	mW
I-bandwidth ye-electro optic modulation (3dB, kusukela ku-2GHz)	BW	≥ 40	I-GHz
I-RF isigamu segagasi le-voltage @ 50KHz	I-Vπ	≤ 3.5	V
Ukubonakaliswa kwe-RF	S₁₁	≤ -10	dB
Amandla okufaka aphezulu e-RF	S_in	≤ 25	i-dBm
Amandla we-Thermal bias half wave	I-Pπ	50	mW
I-voltage yokukhetha ukushisa	U_i-heater	< 8	V
Izinga Lokushisa Lokusebenza	T_O	-55~85	℃
Izinga lokushisa lesitoreji	T_S	-55~85	℃

Ulwazi lwe-oda

Sym	Dincazelo	Ipharamitha ongayikhetha
λ	ubude besikhathi obusebenzayo	I-C (~1550nm)，O (~1310nm)
BW	Umkhawulokudonsa we-3dB	40(40GHz)
PD	Ukuqapha i-PD	1 (kuhlanganisiwe), 0 (akuhlanganisiwe)
IF	I-fiber optic yokufaka	I-P (i-polarization egcina i-fiber)
OF	I-fiber optic ephumayo	I-P (i-polarization monitoring fiber), i-S (i-standard single-mode fiber)
S	I-voltage yesigamu segagasi	Izinga le-S

Usayizi wephakheji kanye nencazelo yephinikhodi

Pencazelweni:

Si-titch	Fukugcotshwa
RF	Okokufaka kwe-RF, ikhanda lesifazane elingu-1.85mm
A	I-electrode ye-Thermostatic bias (enhle nembi)
B	I-electrode ye-Thermostatic bias
C	I-electrode yokukhetha ukuguquguquka kokushisa kwesipele
D	I-electrode yokukhetha ukuguquguquka kokushisa kwesipele

Okwedlule: I-Rof 2000nm I-modulator yesigaba se-electro-optic yesivinini esiphezulu ye-2um

Olandelayo: I-ROF Si i-adjustable gain photodetector I-Silicon Photodetector

I-Rofea Optoelectronics inikeza umugqa womkhiqizo wama-modulator e-Electro-optic athengiswayo, ama-Phase modulator, i-Intensity modulator, ama-Photodetector, imithombo yokukhanya ye-Laser, ama-DFB laser, ama-Optical amplifiers, i-EDFA, i-SLD laser, i-QPSK modulation, i-Pulse laser, i-Light detector, i-Balanced photodetector, i-Laser driver, i-Fiber optic amplifier, i-Optical power meter, i-Broadband laser, i-Tunable laser, i-Optical detector, i-Laser diode driver, i-Fiber amplifier. Siphinde sinikeze ama-modulator amaningi athile okwenza ngezifiso, njenge-1*4 array phase modulators, i-ultra-low Vpi, kanye nama-ultra-high extinction ratio modulators, asetshenziswa kakhulu emanyuvesi nasezikhungweni.
Ngiyethemba ukuthi imikhiqizo yethu izokusiza wena kanye nocwaningo lwakho.

Imikhiqizo Ehlobene