Isakhiwo se-InGaAs Photodetector

Isakhiwo se-Isitholi sezithombe se-InGaAs
Kusukela ngawo-1980, abacwaningi bebefunda isakhiwo sama-photodetector e-InGaAs, angafingqwa ngezinhlobo ezintathu eziyinhloko: i-InGaAs metal semiconductor metalama-photodetectors(MSM-PD), i-InGaAsIzitholi zesithombe ze-PIN(PIN-PD), kanye ne-InGaAsama-photodetector e-avalanche(APD-PD). Kukhona umehluko omkhulu enqubweni yokukhiqiza kanye nezindleko zama-InGaAs photodetectors anezakhiwo ezahlukene, futhi kukhona umehluko omkhulu ekusebenzeni kwedivayisi.
Umdwebo wesakhiwo se-InGaAs metal semiconductor metal photodetector uboniswe esithombeni, okuyisakhiwo esikhethekile esisekelwe ku-Schottky junction. Ngo-1992, uShi nabanye basebenzisa ubuchwepheshe be-epitaxy (LP-MOVPE) yensimbi engaphansi kokucindezela ukukhulisa izendlalelo ze-epitaxial nokulungiselela ama-photodetector e-InGaAs MSM. Idivayisi inokuphendula okuphezulu okungu-0.42 A/W ku-wavelength engu-1.3 μ m kanye nogesi omnyama ongaphansi kuka-5.6 pA/μ m² ku-1.5 V. Ngo-1996, abacwaningi basebenzisa i-epitaxy (GSMBE) ye-gas-phase molecular beam beam (GSMBE) ukukhulisa izendlalelo ze-InAlAs InGaAs InP epitaxial, ezibonise izici zokumelana okuphezulu. Izimo zokukhula zalungiswa ngokulinganisa i-X-ray diffraction, okwaholela ekungahambelani kwe-lattice phakathi kwezingqimba ze-InGaAs ne-InAlAs ngaphakathi kwebanga elingu-1 × 10 ⁻ ³. Ngenxa yalokho, ukusebenza kwedivayisi kwenziwe ngcono, ngogesi omnyama ongaphansi kuka-0.75 pA/μ m² ku-10 V kanye nempendulo esheshayo yesikhashana engu-16 ps ku-5 V. Sekukonke, i-photodetector yesakhiwo se-MSM inesakhiwo esilula nesilula ukusihlanganisa, esibonisa ugesi omnyama ophansi (izinga le-pA), kodwa i-electrode yensimbi inciphisa indawo ephumelelayo yokumunca ukukhanya kwedivayisi, okuholela ekuphenduleni okuphansi uma kuqhathaniswa nezinye izakhiwo.

I-InGaAs PIN photodetector inesendlalelo sangaphakathi esifakwe phakathi kwesendlalelo sokuxhumana sohlobo lwe-P kanye nesendlalelo sokuxhumana sohlobo lwe-N, njengoba kuboniswe esithombeni, okwandisa ububanzi bendawo yokuncishiswa, ngaleyo ndlela kukhanye ama-electron hole pair amaningi futhi kwakha i-photocurrent enkulu, ngaleyo ndlela kukhombisa ukuhanjiswa kwe-elekthronikhi okuhle kakhulu. Ngo-2007, abacwaningi basebenzisa i-MBE ukukhulisa izendlalelo ze-buffer ezisezingeni eliphansi lokushisa, bathuthukisa ubulukhuni bomphezulu futhi banqobe ukungalingani kwe-lattice phakathi kwe-Si ne-InP. Bahlanganise izakhiwo ze-InGaAs PIN kuma-substrate e-InP besebenzisa i-MOCVD, futhi ukusabela kwedivayisi kwakucishe kube ngu-0.57 A/W. Ngo-2011, abacwaningi basebenzisa ama-PIN photodetectors ukuthuthukisa idivayisi yokuthwebula ye-LiDAR ebanga elifushane yokuzulazula, ukugwema izithiyo/ukushayisana, kanye nokuthola/ukuqashelwa kwezimoto ezincane zomhlaba ezingenamuntu. Idivayisi yahlanganiswa ne-chip ye-microwave amplifier eshibhile, okuthuthukisa kakhulu isilinganiso sesignali-kuya-kumsindo sama-InGaAs PIN photodetectors. Ngalesi sisekelo, ngo-2012, abacwaningi basebenzise le divayisi yokuthwebula izithombe ye-LiDAR kumarobhothi, enobubanzi bokuthola obungaphezu kwamamitha angu-50 kanye nesisombululo esinyuswe saya ku-256 × 128.
I-InGaAs avalanche photodetector uhlobo lwe-photodetector ene-gain, njengoba kuboniswe kumdwebo wesakhiwo. Ama-electron hole pair athola amandla anele ngaphansi kwesenzo sensimu kagesi ngaphakathi kwesifunda esiphindwe kabili, futhi ashayisane nama-athomu ukuze akhiqize ama-electron hole pair amasha, akha umphumela we-avalanche futhi aphinde kabili ama-non-equilibrium charge carriers ku-InP substrates. Ngo-2013, abacwaningi basebenzise i-MBE ukukhulisa ama-InGaAs nama-InAlAs alloys afana ne-lattice kuma-InP substrates, beguqula amandla e-carrier ngokusebenzisa izinguquko ekubunjweni kwe-alloy, ukujiya kwe-epitaxial layer, kanye ne-doping, okwandisa i-electroshock ionization ngenkathi kunciphisa i-hole ionization. Ngaphansi kokuthola isignali yokukhipha elinganayo, i-APD ibonisa umsindo ophansi kanye nomusi omnyama ophansi. Ngo-2016, abacwaningi bakhe ipulatifomu yokuhlola ye-laser active imaging engu-1570 nm esekelwe kuma-InGaAs avalanche photodetectors. Isifunda sangaphakathi se-Isitholi sezithombe se-APDama-echo atholiwe futhi akhipha ngqo izimpawu zedijithali, okwenza yonke idivayisi ibe ncane. Imiphumela yokuhlola iboniswe ku-Figures (d) kanye no-(e). I-Figure (d) iyisithombe esibonakalayo se-imaging target, kanti i-Figure (e) iyisithombe sebanga esinezinhlangothi ezintathu. Kungabonakala ngokucacile ukuthi indawo yefasitela ku-Zone C inebanga elithile lokujula kusuka ku-Zones A kanye no-B. Le platform ifinyelela ububanzi be-pulse obungaphansi kwama-10 ns, amandla e-single pulse alungisekayo (1-3) mJ, i-field of view angle engu-2 ° yamalensi okudlulisa nokwamukela, izinga lokuphindaphinda elingu-1 kHz, kanye nomjikelezo womsebenzi wokuthola cishe u-60%. Ngenxa yokwanda kwe-photocurrent yangaphakathi, impendulo esheshayo, usayizi oqinile, ukuqina, kanye nezindleko eziphansi ze-APD, ama-photodetector e-APD angafinyelela izinga lokuthola eliphakeme kakhulu kune-PIN photodetectors. Ngakho-ke, okwamanje i-radar ye-laser ejwayelekile isebenzisa kakhulu ama-photodetector e-avalanche.