Izitholi zezithombe ze-OFC2024

Namuhla ake sibheke i-OFC2024ama-photodetectors, okuhlanganisa kakhulu i-GeSi PD/APD, i-InP SOA-PD, kanye ne-UTC-PD.

1. I-UCDAVIS ibona i-resonant ebuthakathaka engu-1315.5nm engalinganiumshini wokuthola izithombenge-capacitance encane kakhulu, okulinganiselwa ukuthi ingu-0.08fF. Uma i-bias ingu--1V (-2V), ugesi omnyama ungu-0.72 nA (3.40 nA), kanti izinga lokuphendula lingu-0.93a /W (0.96a /W). Amandla okukhanya agcwele angu-2 mW (3 mW). Ingasekela ukuhlolwa kwedatha yesivinini esiphezulu esingu-38 GHz.
Umdwebo olandelayo ukhombisa isakhiwo se-AFP PD, esakhiwe yi-waveguide ehlanganisiwe ye-Ge-on-Isitholi sezithombenge-waveguide yangaphambili ye-SOI-Ge efinyelela ukuxhumanisa okungaphezulu kuka-90% kwemodi kanye nokukhanya okungu-<10%. Ingemuva iyi-distributed Bragg reflector (DBR) enokukhanya okungu->95%. Ngokusebenzisa umklamo we-cavity olungiselelwe kahle (isimo sokufanisa isigaba sokujika), ukukhanya kanye nokudluliselwa kwe-resonator ye-AFP kungasuswa, okuholela ekumuncweni kwe-Ge detector cishe ku-100%. Kuwo wonke umkhawulokudonsa we-20nm we-wavelength ephakathi, i-R+T <2% (-17 dB). Ububanzi be-Ge bungu-0.6µm kanti amandla alinganiselwa ku-0.08fF.

2, iHuazhong University of Science and Technology yakhiqiza i-silicon germaniumi-photodiode yeqhwa, i-bandwidth >67 GHz, inzuzo >6.6. I-SACMIsitholi sezithombe se-APDIsakhiwo se-transverse pipin junction senziwe epulatifomu ye-silicon optical. I-Intrinsic germanium (i-Ge) kanye ne-intrinsic silicon (i-Si) zisebenza njengengqimba yokumunca ukukhanya kanye nengqimba yokuphindaphindwa kwama-electron, ngokulandelana. Isifunda se-i-Ge esinobude obungu-14µm siqinisekisa ukumunca ukukhanya okwanele ku-1550nm. Izifunda ezincane ze-i-Ge kanye ne-i-Si zivumela ukwandisa ubuningi be-photocurrent kanye nokwandisa i-bandwidth ngaphansi kwe-high bias voltage. Imephu yeso ye-APD ilinganiswe ku--10.6 V. Ngamandla okufaka optical angu--14 dBm, imephu yeso yezibonakaliso ze-OOK ezingu-50 Gb/s kanye no-64 Gb/s iboniswe ngezansi, kanti i-SNR elinganisiwe ingu-17.8 kanye no-13.2 dB, ngokulandelana.

3. Izakhiwo zomugqa wokuhlola we-IHP ongu-8-intshi we-BiCMOS zibonisa i-germaniumIsitholi sesithombe se-PDngobubanzi bephini obungaba ngu-100 nm, okungakhiqiza insimu kagesi ephezulu kakhulu kanye nesikhathi esifushane kakhulu sokukhukhuleka kwe-photocarrier. I-Ge PD ine-bandwidth ye-OE engu-265 GHz@2V@ 1.0mA DC photocurrent. Ukugeleza kwenqubo kuboniswe ngezansi. Isici esikhulu kunazo zonke ukuthi ukufakwa kwe-ion okuxubile kwe-SI yendabuko kuyashiywa, futhi uhlelo lokuqopha ukukhula luyasetshenziswa ukuze kugwenywe ithonya lokufakwa kwe-ion ku-germanium. Ugesi omnyama ungu-100nA,R = 0.45A/W.
4, i-HHI ibonisa i-InP SOA-PD, equkethe i-SSC, i-MQW-SOA kanye ne-photodetector yesivinini esikhulu. Kwi-O-band. I-PD inokuphendula okungu-0.57 A/W okungaphansi kwe-1 dB PDL, kuyilapho i-SOA-PD inokuphendula okungu-24 A/W okungaphansi kwe-1 dB PDL. I-bandwidth yalezi zibili ingu-~60GHz, futhi umehluko we-1 GHz ungabangelwa imvamisa ye-resonance ye-SOA. Akukho mphumela wephethini obonwe esithombeni sangempela samehlo. I-SOA-PD yehlisa amandla okukhanya adingekayo cishe ngo-13 dB ku-56 GBaud.

5. I-ETH isebenzisa i-Type II GaInAsSb/InP UTC-PD ethuthukisiwe, ene-bandwidth engu-60GHz @ zero bias kanye namandla aphezulu okukhipha angu--11 DBM ku-100GHz. Ukuqhubeka kwemiphumela yangaphambilini, kusetshenziswa amakhono okuthutha ama-electron athuthukisiwe e-GaInAsSb. Kuleli phepha, izendlalelo zokumunca ezilungiselelwe zifaka i-GaInAsSb efakwe kakhulu engu-100 nm kanye ne-GaInAsSb engafakwanga engu-20 nm. Isendlalelo se-NID sisiza ukuthuthukisa ukuphendula okuphelele futhi sisiza futhi ukunciphisa amandla edivayisi kanye nokuthuthukisa i-bandwidth. I-64µm2 UTC-PD ine-bandwidth engu-zero-bias engu-60 GHz, amandla okukhipha angu--11 dBm ku-100 GHz, kanye nogesi wokugcwala ongu-5.5 mA. Nge-reverse bias engu-3 V, i-bandwidth iyanda ibe ngu-110 GHz.

6. I-Innolight yasungula imodeli yokuphendula imvamisa ye-germanium silicon photodetector ngokusekelwe ekucabangeni ngokugcwele ukusebenzisa i-doping yamadivayisi, ukusatshalaliswa kwensimu kagesi kanye nesikhathi sokudlulisa i-carrier esenziwe ngesithombe. Ngenxa yesidingo samandla amakhulu okufaka kanye ne-bandwidth ephezulu kuzinhlelo zokusebenza eziningi, ukufaka amandla amakhulu okukhanya kuzobangela ukwehla kwe-bandwidth, umkhuba omuhle kakhulu ukunciphisa ukugcwala kwe-carrier ku-germanium ngokuklama kwesakhiwo.

7, iYunivesithi yaseTsinghua yaklama izinhlobo ezintathu ze-UTC-PD, (1) isakhiwo se-bandwidth esingu-100GHz double drift layer (DDL) esinamandla aphezulu okugcwala i-UTC-PD, (2) isakhiwo se-bandwidth esingu-100GHz double drift layer (DCL) esinamandla aphezulu okugcwala i-UTC-PD, (3) i-bandwidth engu-230 GHZ MUTC-PD enamandla aphezulu okugcwala, Ezimweni ezahlukene zohlelo lokusebenza, amandla aphezulu okugcwala, i-bandwidth ephezulu kanye nokuphendula okuphezulu kungaba usizo esikhathini esizayo lapho ungena enkathini engu-200G.