Umugqa ophezului-electro-optic modulekanye nesicelo se-microwave photon
Ngezidingo ezikhulayo zezinhlelo zokuxhumana, ukuze kuthuthukiswe ukusebenza kahle kokudluliselwa kwamasignali, abantu bazohlanganisa ama-photon nama-electron ukuze bathole izinzuzo ezihambisanayo, futhi kuzozalwa ama-photonics ama-microwave.I-electro-optical modulator iyadingeka ukuze kuguqulwe ugesi ukuze ukhanyiseama-microwave photonic systems, futhi lesi sinyathelo esiyinhloko sivame ukunquma ukusebenza kwesistimu yonke.Njengoba ukuguqulwa kwesignali yefrikhwensi yomsakazo ibe yisizinda se-optical kuyinqubo yesignali ye-analog, futhi evamileama-modulators e-electro-opticalzinokungaqondile ngokwemvelo, kukhona ukuhlanekezelwa kwesignali okubucayi kunqubo yokuguqulwa.Ukuze kuzuzwe isilinganiso sokushintshwa komugqa, indawo yokusebenza yemoduli ivamise ukumiswa endaweni ye-orthogonal bias, kodwa namanje ayikwazi ukuhlangabezana nezimfuneko zesixhumanisi se-microwave photon somugqa wemoduli.Amamojula we-Electro-optic anomugqa ophezulu adingeka ngokushesha.
I-high-speed refractive index modulation yezinto ze-silicon ngokuvamile ifinyelelwa ngomphumela wamahhala we-carrier plasma dispersion (FCD).Kokubili umphumela we-FCD kanye nokushintshashintsha kwe-PN junction akunamugqa, okwenza imodulator ye-silicon ingabi nomugqa kunemoduli ye-lithium niobate.Izinto ze-lithium niobate zibonisa okuhle kakhuluukuguqulwa kwe-electro-opticalizakhiwo ngenxa yomphumela wazo we-Pucker.Ngesikhathi esifanayo, impahla ye-lithium niobate inezinzuzo zomkhawulokudonsa omkhulu, izici ezinhle zokuguquguquka, ukulahlekelwa okuphansi, ukuhlanganiswa okulula nokuhambisana nenqubo ye-semiconductor, ukusetshenziswa kwefilimu encane ye-lithium niobate ukwenza i-modulator ye-electro-optical ephezulu yokusebenza, uma kuqhathaniswa ne-silicon. cishe akukho "ipuleti elifushane", kodwa futhi nokufeza ukuhleleka okuphezulu.Ifilimu elincanyana i-lithium niobate (LNOI) imoduli ye-electro-optic kusivikeli sezinto isiphenduke inkomba yentuthuko ethembisayo.Ngokuthuthukiswa kwefilimu encane ye-lithium niobate ubuchwepheshe bokulungiselela izinto kanye nobuchwepheshe be-waveguide etching, ukusebenza kahle okuphezulu kokuguqulwa kanye nokuhlanganiswa okuphezulu kwefilimu encane ye-lithium niobate electro-optic modulator isiphenduke insimu yezemfundo yamazwe ngamazwe kanye nezimboni.
Izici zefilimu elincanyana i-lithium niobate
E-United States, ukuhlela kwe-DAP AR kwenze lokhu kuhlola okulandelayo kwezinto zokwakha ze-lithium niobate: uma isikhungo senguquko ye-elekthronikhi siqanjwe ngezinto ze-silicon ezenza kwenzeke, khona-ke indawo yokuzalwa ye-photonics revolution cishe izoqanjwa ngegama le-lithium niobate. .Lokhu kungenxa yokuthi i-lithium niobate ihlanganisa umphumela we-electro-optical, umphumela we-acousto-optical, umphumela we-piezoelectric, umphumela we-thermoelectric kanye nomphumela we-photorefractive kokukodwa, njengezinto ze-silicon emkhakheni we-optics.
Mayelana nezici zokudlulisa amehlo, okokusebenza kwe-InP kunokulahleka okukhulu kokudluliselwa kwe-on-chip ngenxa yokumuncwa kokukhanya ebhendini evame ukusetshenziswa engu-1550nm.I-SiO2 ne-silicon nitride inezici ezingcono kakhulu zokudlulisa, futhi ukulahlekelwa kungafinyelela izinga elingu-~ 0.01dB/cm;Njengamanje, ukulahlekelwa kwe-waveguide yefilimu elincanyana i-lithium niobate waveguide kungafinyelela izinga elingu-0.03dB/cm, futhi ukulahlekelwa kwefilimu encane ye-lithium niobate waveguide kunethuba lokuncishiswa ngokwengeziwe ngokuthuthukiswa okuqhubekayo kwezinga lobuchwepheshe esizayo.Ngakho-ke, ifilimu elincanyana i-lithium niobate impahla izokhombisa ukusebenza kahle kwezakhiwo zokukhanya okungenzi lutho njenge-photosynthetic path, shunt kanye ne-microring.
Mayelana nokukhiqizwa kokukhanya, i-InP kuphela enekhono lokukhipha ukukhanya ngokuqondile;Ngakho-ke, ukuze kusetshenziswe ama-photon e-microwave, kuyadingeka ukwethula umthombo wokukhanya osuselwe ku-InP ku-LNOI esekelwe kwi-photonic integrated chip ngendlela yokulayisha kabusha i-welding noma ukukhula kwe-epitaxial.Mayelana nokuguquguquka kokukhanya, kugcizelelwe ngenhla ukuthi ifilimu elincanyana i-lithium niobate impahla kulula ukufeza umkhawulokudonsa omkhulu wokumodulisa, ugesi ophansi wamagagasi ohhafu nokulahleka kokudlulisela okuphansi kune-InP ne-Si.Ngaphezu kwalokho, ukuhambisana okuphezulu kwe-electro-optical modulation yefilimu encane ye-lithium niobate materials ibalulekile kuzo zonke izinhlelo zokusebenza ze-microwave photon.
Ngokuphathelene nomzila wokubona, impendulo ye-electro-optical yesivinini esikhulu sefilimu encane ye-lithium niobate material yenza i-LNOI esekelwe optical switch ekwazi ukushintsha umzila we-optical ngesivinini esiphezulu, futhi ukusetshenziswa kwamandla okushintshwa kwesivinini esiphezulu okunjalo nakho kuphansi kakhulu.Ngokusetshenziswa okujwayelekile kobuchwepheshe obuhlanganisiwe be-microwave photon, i-chip ye-beamforming elawulwa ngokubonakalayo inamandla okushintsha ngesivinini esiphezulu ukuze ihlangabezane nezidingo zokuskena kwe-beam okusheshayo, futhi izici zokusetshenziswa kwamandla aphansi kakhulu zivumelane kahle nezimfuneko eziqinile ze- -isistimu ye-array enezigaba ezilinganiselwe.Nakuba i-InP based optical switch ingase futhi ibone ukushintsha kwendlela yokubona enesivinini esikhulu, izokwethula umsindo omkhulu, ikakhulukazi uma iswishi ye-multilevel optical is cascaded, i-coefficient yomsindo izokonakala kakhulu.I-silicon, i-SiO2 kanye nezinto ze-silicon nitride zingashintsha kuphela izindlela zokubona ngomphumela we-thermo-optical noma umphumela wokuhlakazeka kwenkampani yenethiwekhi, enobubi bokusebenzisa amandla aphezulu kanye nesivinini sokushintsha kancane.Uma usayizi wamalungu afanayo wesigaba esinezigaba mkhulu, awukwazi ukuhlangabezana nezidingo zokusetshenziswa kwamandla.
Ngokuphathelene nokukhulisa i-optical, ii-semiconductor optical amplifier (I-SOA) okusekelwe ku-InP isivuthiwe ukuze isetshenziswe ngokwezentengiselwano, kodwa inokungalungi kwe-coefficient ephezulu yomsindo namandla aphumayo agcwele amanzi aphansi, angahambisani nokusetshenziswa kwama-microwave photon.Inqubo yokukhulisa ipharamitha yefilimu encane ye-lithium niobate waveguide esekelwe ekusebenzeni ngezikhathi ezithile nokuguqulwa ingafinyelela umsindo ophansi namandla aphezulu ku-chip optical amplification, engahlangabezana kahle nezidingo zobuchwepheshe obuhlanganisiwe be-microwave photon bokukhulisa i-on-chip optical.
Mayelana nokutholwa kokukhanya, ifilimu elincanyana i-lithium niobate inezici ezinhle zokudlulisela ukukhanya ku-1550 nm band.Umsebenzi wokuguqulwa kwe-photoelectric awukwazi ukufezeka, ngakho-ke ngezicelo ze-microwave photon, ukuze kuhlangatshezwane nezidingo zokuguqulwa kwe-photoelectric ku-chip.Ama-InGaAs noma amayunithi okuthola i-Ge-Si adinga ukwethulwa kuma-chips ahlanganisiwe we-photonic asuselwa ku-LNOI ngokulayisha kabusha i-welding noma ukukhula kwe-epitaxial.Ngokuphathelene nokuhlangana ne-fiber optical, ngoba i-fiber optical ngokwayo iyimpahla ye-SiO2, inkambu yemodi ye-SiO2 waveguide inezinga eliphakeme kakhulu elihambisanayo nenkambu yemodi ye-fiber optical, futhi ukuhlanganisa yiyona elula kakhulu.Ububanzi benkambu yemodi ye-waveguide ekhawulelwe ngokuqinile yefilimu elincanyana i-lithium niobate icishe ibe ngu-1μm, ehluke kakhulu kunkambu yemodi yefiber optical, ngakho ukuguqulwa kwendawo yemodi efanele kufanele kwenziwe ukuze kufane nenkambu yemodi yefiber optical.
Mayelana nokuhlanganiswa, noma ngabe izinto ezihlukahlukene zinamandla aphezulu okuhlanganiswa kuncike kakhulu kububanzi obugobayo be-waveguide (ethintwa umkhawulo wenkambu yemodi ye-waveguide).I-waveguide ekhawulelwe ngokuqinile ivumela irediyasi egobayo encane, esiza kakhulu ekugcwalisekeni kokuhlanganiswa okuphezulu.Ngakho-ke, ama-waveguides e-lithium niobate amafilimu amancane anamandla okufinyelela ukuhlanganiswa okuphezulu.Ngakho-ke, ukubonakala kwefilimu elincanyana i-lithium niobate kwenza kube lula ukuthi izinto ze-lithium niobate zidlale indima ye-optical "silicon".Ukuze kusetshenziswe izithombe ze-microwave, izinzuzo zefilimu elincanyana i-lithium niobate zisobala kakhulu.
Isikhathi sokuthumela: Apr-23-2024