Ukulingana okuphezului-electro-optic modulatorkanye nokusetshenziswa kwe-photon ye-microwave
Njengoba izidingo zezinhlelo zokuxhumana ziyanda, ukuze kuthuthukiswe ukusebenza kahle kokudlulisa amasignali, abantu bazohlanganisa ama-photon nama-electron ukuze bazuze izinzuzo ezihambisanayo, futhi kuzozalwa ama-photonics e-microwave. I-modulator ye-electro-optical iyadingeka ukuze kuguqulwe ugesi ube ukukhanya ku-izinhlelo ze-photonic ze-microwave, futhi lesi sinyathelo esibalulekile sivame ukunquma ukusebenza kwesistimu yonke. Njengoba ukuguqulwa kwesignali yemvamisa yomsakazo ibe yisizinda se-optical kuyinqubo yesignali ye-analog, futhi evamileama-modulators e-electro-opticalNjengoba zingenalo ulayini, kukhona ukuphazamiseka okukhulu kwesignali enqubweni yokuguqulwa. Ukuze kufezwe ukuguquguquka okuqondile, indawo yokusebenza ye-modulator ivame ukunamathela endaweni ye-orthogonal bias, kodwa ayikakwazi ukuhlangabezana nezidingo zesixhumanisi se-microwave photon sokulingana kwe-modulator. Ama-modulators e-electro-optic anolayini ophezulu adingeka ngokushesha.
Ukuguqulwa kwe-high-speed refractive index yezinto ze-silicon kuvame ukufezwa ngomphumela we-free carrier plasma dispersion (FCD). Kokubili umphumela we-FCD kanye nokuguqulwa kwe-PN junction akulona i-linear, okwenza i-silicon modulator ingabi yi-linear kune-lithium niobate modulator. Izinto ze-lithium niobate ziveza kahle kakhulu.ukuguqulwa kwe-electro-opticalizakhiwo ngenxa yomphumela wazo we-Pucker. Ngesikhathi esifanayo, izinto ze-lithium niobate zinezinzuzo ze-bandwidth enkulu, izici ezinhle zokuguquguquka, ukulahlekelwa okuphansi, ukuhlanganiswa okulula kanye nokuhambisana nenqubo ye-semiconductor, ukusetshenziswa kwe-thin film lithium niobate ukwenza i-electro-optical modulator esebenza kahle kakhulu, uma kuqhathaniswa ne-silicon cishe akukho "ipuleti elifushane", kodwa futhi nokufeza ukulingana okuphezulu. I-thin film lithium niobate (LNOI) electro-optic modulator ku-insulator isibe yindlela ethembisayo yokuthuthukiswa. Ngokuthuthuka kobuchwepheshe bokulungiselela izinto ze-thin film lithium niobate kanye nobuchwepheshe bokugoba amagagasi, ukusebenza kahle kokuguqulwa okuphezulu kanye nokuhlanganiswa okuphezulu kwe-thin film lithium niobate electro-optic modulator sekuphenduke insimu yezemfundo yamazwe ngamazwe kanye nemboni.
Izici zefilimu encane ye-lithium niobate
E-United States, ukuhlela kwe-DAP AR kwenze ukuhlolwa okulandelayo kwezinto ze-lithium niobate: uma isikhungo se-electronic revolution siqanjwe ngezinto ze-silicon ezenza kube nokwenzeka, khona-ke indawo yokuzalwa kwe-photonics revolution cishe izoqanjwa nge-lithium niobate. Lokhu kungenxa yokuthi i-lithium niobate ihlanganisa umphumela we-electro-optical, umphumela we-acousto-optical, umphumela we-piezoelectric, umphumela we-thermoelectric kanye nomphumela we-photorefractive kokukodwa, njengezinto ze-silicon emkhakheni we-optics.
Ngokuphathelene nezici zokudlulisa ukukhanya, izinto ze-InP zinokulahlekelwa okukhulu kokudluliselwa kwe-on-chip ngenxa yokumuncwa kokukhanya ebhendini elisetshenziswa kakhulu le-1550nm. I-SiO2 kanye ne-silicon nitride zinezici zokudlulisa ezinhle kakhulu, futhi ukulahlekelwa kungafinyelela ezingeni lika-~ 0.01dB/cm; Njengamanje, ukulahlekelwa kwe-waveguide ye-thin-film lithium niobate waveguide kungafinyelela ezingeni lika-0.03dB/cm, futhi ukulahlekelwa kwe-thin-film lithium niobate waveguide kunamandla okunciphisa kakhulu ngokuthuthuka okuqhubekayo kwezinga lobuchwepheshe esikhathini esizayo. Ngakho-ke, izinto ze-thin film lithium niobate zizobonisa ukusebenza okuhle kwezakhiwo zokukhanya ezingasebenzi njenge-photosynthetic path, i-shunt kanye ne-microring.
Ngokuphathelene nokukhiqiza ukukhanya, i-InP kuphela enekhono lokukhipha ukukhanya ngqo; Ngakho-ke, ukuze kusetshenziswe ama-photon e-microwave, kubalulekile ukwethula umthombo wokukhanya osekelwe ku-InP ku-chip ehlanganisiwe ye-photonic esekelwe ku-LNOI ngendlela yokulayisha emuva noma ukukhula kwe-epitaxial. Ngokuphathelene nokuguqulwa kokukhanya, kugcizelelwe ngenhla ukuthi izinto ze-lithium niobate zefilimu encane kulula ukufeza i-bandwidth enkulu yokuguquguquka, i-voltage ephansi ye-half-wave kanye nokulahlekelwa okuphansi kokudlulisela kune-InP ne-Si. Ngaphezu kwalokho, ukulingana okuphezulu kokuguqulwa kwe-electro-optical kwezinto ze-lithium niobate zefilimu encane kubalulekile kuzo zonke izinhlelo zokusebenza ze-microwave photon.
Ngokuphathelene nokujikeleza kwe-optical, impendulo ye-electro-optical yesivinini esikhulu sezinto ezincane ze-lithium niobate zenza i-LNOI based optical switch ikwazi ukushintsha i-optical routing ngesivinini esikhulu, futhi ukusetshenziswa kwamandla kokushintsha okunjalo kwesivinini esikhulu nakho kuphansi kakhulu. Ngokusetshenziswa okuvamile kobuchwepheshe be-microwave photon obuhlanganisiwe, i-chip ye-beamforming elawulwa ngokubonakalayo inekhono lokushintsha isivinini esikhulu ukuhlangabezana nezidingo zokuskena okusheshayo kwe-beam, futhi izici zokusetshenziswa kwamandla aphansi kakhulu zivumelaniswa kahle nezidingo eziqinile zesistimu ye-array esezingeni elikhulu. Nakuba i-InP based optical switch ingaphinde ifeze ukushintsha kwe-optical path yesivinini esikhulu, izoletha umsindo omkhulu, ikakhulukazi lapho i-optical switch yezinga eliphezulu ikhishwa, i-noise coefficient izowohloka kakhulu. Izinto ze-Silicon, i-SiO2 kanye ne-silicon nitride zingashintsha kuphela izindlela ze-optical ngomphumela we-thermo-optical noma umphumela wokusabalala kwe-carrier, onezinkinga zokusetshenziswa kwamandla aphezulu kanye nesivinini sokushintsha okuhamba kancane. Lapho usayizi we-array we-array esezingeni elikhulu mkhulu, awukwazi ukuhlangabezana nezidingo zokusetshenziswa kwamandla.
Ngokuphathelene nokukhulisa ukukhanya, i-optical amplification isetshenziswa.i-amplifier ye-semiconductor optical (I-SOA) ngokusekelwe ku-InP isivuthiwe ukusetshenziswa kwezentengiselwano, kodwa inezinkinga ze-coefficient yomsindo ophezulu kanye namandla okukhipha okugcwala aphansi, okungavumeli ukusetshenziswa kwama-photon e-microwave. Inqubo yokukhulisa i-parametric ye-thin-film lithium niobate waveguide esekelwe ekusebenzeni okuvamile kanye nokuguqulwa ingafinyelela umsindo ophansi kanye nokukhulisa okubonakalayo kwamandla aphezulu e-on-chip, okungahlangabezana kahle nezidingo zobuchwepheshe be-photon ye-microwave ehlanganisiwe yokukhulisa okubonakalayo kwe-on-chip.
Ngokuphathelene nokutholwa kokukhanya, i-thin film lithium niobate inezici ezinhle zokudlulisela ukukhanya ku-1550 nm band. Umsebenzi wokuguqulwa kwe-photoelectric awukwazi ukufezeka, ngakho-ke ngezinhlelo zokusebenza ze-microwave photon, ukuze kuhlangatshezwane nezidingo zokuguqulwa kwe-photoelectric ku-chip. Amayunithi okuthola i-InGaAs noma i-Ge-Si adinga ukwethulwa kuma-chip ahlanganisiwe e-photonic asekelwe ku-LNOI ngokufaka i-backloading welding noma ukukhula kwe-epitaxial. Ngokuphathelene nokuhlanganiswa ne-optical fiber, ngoba i-optical fiber ngokwayo iyimpahla ye-SiO2, insimu yemodi ye-waveguide ye-SiO2 inezinga eliphakeme kakhulu lokufanisa nensimu yemodi ye-optical fiber, futhi ukuhlanganiswa yikho okulula kakhulu. Ububanzi bensimu yemodi ye-waveguide ekhawulelwe kakhulu ye-thin film lithium niobate bungaba ngu-1μm, okuhluke kakhulu ensimini yemodi ye-optical fiber, ngakho-ke ukuguqulwa kwe-spot yemodi efanele kumele kwenziwe ukuze kufane nensimu yemodi ye-optical fiber.
Ngokuphathelene nokuhlanganiswa, ukuthi izinto ezahlukene zinamandla okuhlanganisa aphezulu kuncike kakhulu erediyasini yokugoba ye-waveguide (ethintwa ukulinganiselwa kwensimu yemodi ye-waveguide). I-waveguide ekhawulelwe kakhulu ivumela irediyasi encane yokugoba, evumela kakhulu ukufezwa kokuhlanganiswa okuphezulu. Ngakho-ke, ama-waveguides e-thin-film lithium niobate anamandla okufeza ukuhlanganiswa okuphezulu. Ngakho-ke, ukubonakala kwe-thin film lithium niobate kwenza kube nokwenzeka ukuthi izinto ze-lithium niobate zidlale indima "ye-silicon" ebonakalayo. Ekusetshenzisweni kwama-photon e-microwave, izinzuzo ze-thin film lithium niobate zisobala kakhulu.
Isikhathi sokuthunyelwe: Ephreli-23-2024