Ulayini ophakemeI-Electro-Optic Modulatorkanye ne-microwave Photon application
Ngezidingo ezikhulayo zezinhlelo zokuxhumana, ukuze uthuthukise ukuthuthukisa ukusebenza kahle kwezimpawu, abantu bazofaka ama-photons kanye nama-elektroni ukuze bazuze izinzuzo ezihambisanayo, futhi izithombe ze-microwave zizozalwa. I-electro-optical modulator iyadingeka ekuguqulweni kukagesi ukukhanyisa ngaphakathiAmasistimu we-Microwave Photonic, futhi lesi sinyathelo esingukhiye sivame ukunquma ukusebenza kohlelo lonke. Kusukela ukuguqulwa kwesiginali ye-Radio Frequency Tonical Domain kuyinqubo yesiginali ye-analog, kanye nokujwayelekileI-Electro-Optical ModulatorsUbe ne-nonlinearity, kukhona ukuhlanekekezelana kwesiginali okukhulu kwinqubo yokuguqulwa. Ukuze uzuze ukuguquguquka okulinganisiwe okuqondile, indawo yokusebenza yesimondi ivame ukulungiswa endaweni ye-Orthogonal Bias, kepha ayikwazi ukufeza izidingo ze-Microwave Photon Link for the linerity of the modulator. I-Electro-optic modulators abanokulinganiselwa okuphezulu badingeka ngokuphuthumayo.
Ukuguqulwa kwe-Deping-Speed Resuaction Ukuguqulwa kwezinto ze-silicon kuvame ukufinyelelwa yi-Free Carrier Plasma Disppion (FCD) umphumela. Zombili i-FCD Effect kanye ne-PN Junction Modauration anglonear, okwenza i-silicon modulator ibe ngaphansi komugqa we-lithium niobate modulator. Izinto zokwenziwa ze-lithium niobate zibonisa okuhle kakhuluUkushintshwa kwe-Electro-Opticalizakhiwo ngenxa yomphumela wabo we-pucker. Ngasikhathi sinye, izinto ze-lithium niobate zinezinzuzo ze-bandwidth enkulu, izici zokumodula ezinhle, ukuhlanganiswa okuphansi, ukuhlanganiswa okulula kanye ne-silico cishe " Ifilimu elincanyana le-lithium niobate (LNOI) i-electro-optic modulator ku-insulator isiphenduke isiqondiso sentuthuko esithembisayo. Ngokuthuthukiswa kwe-Fiffing Film Lithium Nithiate Ukulungiselela Ukulungiselela Ubuchwepheshe kanye Nobuchwepheshe be-WaveGuide Etching, ukusebenza kahle okuphezulu nokuhlanganiswa okuphezulu kwe-Fithium Nithium Nithic Modulator sekuphenduke umkhakha we-International Academia kanye nemboni.
Izici zefilimu elincanyana leatium niabate
E-United States DAP AR ukuhlela kwenze ukuhlolwa okulandelayo kwezinto zokwakha ze-lithium niobate: Uma isikhungo senguquko ye-elekthronikhi siqanjwe nge-silicon impahla eyenza sikwazi ukuqanjwa ngemuva kokuthi i-lithium niobate. Lokhu kungenxa yokuthi i-lithium niobate ihlanganisa umphumela we-electro-optical, umphumela we-acousousto-optical, umphumela we-piezoelectric, umphumela we-thermoelectric kanye ne-photorefrate effect okukodwa, njenge-silicon impahla emkhakheni we-Optics.
Ngokuya kwezimpawu zokuhambisa i-Optical, impahla ye-INP inokulahleka okukhulu kakhulu kwe-Chip Ukulahleka ngenxa yokutholwa kokukhanya ku-1550nm band evame ukusetshenziswa kwe-1550nm. I-SIO2 ne-Silicon Nitride zinezici ezinhle kakhulu zokuhambisa, futhi ukulahleka kungafinyelela ezingeni ~ 0.01DB / cm; Njengamanje, ukulahleka kwe-waveguide ye-lithium niobate ye-lithium nithium ungafinyelela ezingeni le-0.03DB / cm, kanye nokulahleka kwe-lithium niobate ye-lithium niobate ye-waveGuide inamandla okuncishiswa ngokuthuthuka okuqhubekayo kweleveli yezobuchwepheshe ngokuzayo. Ngakho-ke, izinto zefilimu ezincanyana ze-lithium niobate zizokhombisa ukusebenza okuhle kwezakhiwo ezikhanyayo ezinjenge-photosynththetic indlela, shunt kanye ne-microsing.
Ngokuya ngesizukulwane sokukhanya, i-INP kuphela enamandla okukhipha ukukhanya ngqo; Ngakho-ke, ukusetshenziswa kwe-Microwave Photons, kuyadingeka ukwethula umthombo wokukhanya we-INP osekwe kwi-LNOI esekwe ku-chip ehlanganisiwe ye-LNOC Mayelana nokushintshana okukhanyayo, kugcizelelwe ngenhla kwalapho kulula khona amafilimu amafiphaza we-lithium niobate kulula ukuzuza i-bandwidth enkulu yokumodanga, i-voltage ephansi ye-wave ye-inc kanye ne-SI. Ngaphezu kwalokho, ulayini ophezulu wokuguqulwa kwe-electro-optical kwamafilimu amafilimu amafilimu we-lithium niobate kubalulekile kuwo wonke ama-Photon Photon application.
Ngokuya ngomzila we-Optical, i-Elect Speed Electro-Optical Respont of Fit film film lithium niobate impahla yenza ukushintshwa kwe-LNOI kususelwa ku-Optical Strain ekwazi ukushintshwa kwejubane eliphakeme lokushintshwa kwejubane, kanye nokusetshenziswa kwamandla okushintshiwe okuphezulu kakhulu kuphansi kakhulu. Ukuze kusetshenziswe ubuchwepheshe obujwayelekile be-Photon Photon Technology, i-chip elawulwa ngokusobala inamandla okushintsha okusheshayo ukuze uhlangabezane nezidingo zokuskena okusheshayo kwe-beam, futhi izici zokusetshenziswa kwamandla okuphansi zivumelaniswe kahle nezidingo eziqinile zohlelo olukhulu lwama-array ahlelwe kahle. Yize ukushintshwa kwe-Optical Okusekelwe Kwe-IPP kungabona futhi ukushintshwa kwendlela ephezulu kakhulu, kuzokwethula umsindo omkhulu, ikakhulukazi lapho inkinobho ye-multilevevel optical ihlehliswa, umsindo osebenza kahle uzokwehla kakhulu. I-Silicon, i-Sio2 ne-Silicon Nitride Izinto ezingashintsha kuphela izindlela ze-Optical ngokusebenzisa umphumela we-thermo-optical noma umphumela wokuhlakazeka we-Carriers, okunobunzima bokusebenzisa amandla aphezulu kanye nejubane elishintsha kancane. Lapho usayizi wamalungu we-array we-array enezigaba mkhulu, awukwazi ukufeza izidingo zokusetshenziswa kwamandla.
Ngokuya nge-Optical Amplification, TheI-Semicondector Optical Amplifier (Inyoka) Ngokusekelwe ku-INP sekuvuthiwe ukusetshenziswa kwezentengiso, kepha kunezinto ezimbi zomsindo omkhulu kanye namandla okukhishwa aphansi, okungalungile ekusetshenzisweni kwe-Photon Microwave. Inqubo ye-parametric amplification ye-Lithium Nithium Nithium Nithium Nithium WaveGuide esuselwa kusebenze ngezikhathi ezithile futhi i-Inversion ingafinyelela umsindo ophansi namandla aphezulu amplical amplification, okungahlangabezana kahle nezidingo ze-PhotoWave Photon Pliclical.
Ngokuya kokutholwa okukhanyayo, ifilimu elincanyana le-lithium niobate linezimpawu ezinhle zokuhambisa ukukhanya ku-1550 NM band. Umsebenzi wokuguqulwa kwe-Photeelectric awukwazi ukutholakala, ukuze kutholakale izicelo ze-Microwave Photon, ukuze uhlangabezane nezidingo zokuguqulwa kwe-PhotoElectric on the Chip. Amayunithi wokutholwa kwe-Ingaas noma amayunithi we-Ge-SI adinga ukwethulwa kuma-LNOI asekelwe ku-Photonic Photonic Chip ahlanganisiwe ngokulayisha i-wangering welding noma ekukhuleni kwe-Epitaxial. Ngokuya ngokuhlangana ne-fiber ye-optical, ngoba i-fiber optical ngokwayo iyinto ye-SIO2, imodi ye-SOME2 WaveGuide ine-degree ehambelana kakhulu ne-mode fiber, futhi ukuhlanganisa kulula kakhulu. Ububanzi benkambu ye-mode ye-waveguide ekhawulelwe kakhulu yefilimu elincanyana le-lithium niobate cishe yi-1μM, ehluke kakhulu kwinkambu yemodi ye-fiber ye-Optical, ngakho-ke i-Mode Code Spot Refform kumele yenziwe ukufanisa inkambu yemodi ye-fiber ye-Optical.
Ngokuya ngokuhlanganiswa, noma ngabe izinto ezahlukahlukene zinenhlanganisela ephezulu yokuhlanganiswa kuncike kakhulu kwimisebe yokugoba ye-waveguide (ethintekile ukukhawulelwa kwenkambu ye-WaveGuide Mode). I-waveguide evinjelwe ngokuqinile ivumela irediyo encane yokugoba, evumelana kakhulu ekufezekisweni okuphezulu. Ngakho-ke, ama-waveguides ama-lithium athambile athambile anamandla okuthola ukuhlanganiswa okuphezulu. Ngakho-ke, ukubukeka kwefilimu elincanyana le-lithium niobate kwenza kube nokwenzeka nge-lithium niobate impahla ukuze idlale indima ye- "silicon" ye-optical. Ukusetshenziswa kwezithombe ze-microwave, izinzuzo zefilimu emincane ye-lithium niobate zisobala kakhulu.
Isikhathi sePosi: APR-23-2024