Abstract: Isakhiwo esiyisisekelo kanye nesimiso sokusebenza se-avalanche photodetector (I-APD photodetector) ziyethulwa, inqubo yokuvela kwesakhiwo sedivayisi iyahlaziywa, isimo samanje socwaningo siyafingqwa, futhi ukuthuthukiswa kwesikhathi esizayo kwe-APD kufundwa ngokuzayo.
1. Isingeniso
I-photodetector iyisisetshenziswa esiguqula amasignali okukhanya abe amasignali kagesi.Phakathi kui-semiconductor photodetector, inkampani yenethiwekhi ekhiqizwe isithombe ejatshuliswe i-photon yesigameko ingena kwisekethe yangaphandle ngaphansi kwe-voltage echema esetshenzisiwe bese yenza i-photocurrent elinganisekayo.Ngisho nasekuphenduleni okuphezulu, i-PIN photodiode ingakhiqiza kuphela ipheya yama-electron-hole kakhulu, okuyidivayisi engenanzuzo yangaphakathi.Ukuze uthole ukusabela okukhulu, i-avalanche photodiode (APD) ingasetshenziswa.Umthelela wokukhulisa i-APD ku-photocurrent usekelwe kumphumela wokungqubuzana kwe-ionization.Ngaphansi kwezimo ezithile, ama-electron asheshisiwe nezimbobo angathola amandla anele okushayisana ne-lattice ukukhiqiza ipheya entsha yamapheya embobo ye-electron.Le nqubo iwukusabela kweketango, ukuze amapheya amapheya e-electron-hole akhiqizwe ukumuncwa ukukhanya angakhiqiza inani elikhulu lamapheya e-electron-hole futhi enze i-photocurrent yesibili enkulu.Ngakho-ke, i-APD inokusabela okuphezulu kanye nokuzuza kwangaphakathi, okuthuthukisa isilinganiso sesignali-kumsindo wedivayisi.I-APD izosetshenziswa kakhulu ezinhlelweni zokuxhumana ze-optical ezikude noma ezincane ezineminye imikhawulo emandleni okubona atholiwe.Njengamanje, ochwepheshe abaningi bemishini yokubona banethemba elikhulu mayelana namathemba e-APD, futhi bakholelwa ukuthi ucwaningo lwe-APD luyadingeka ukuze kuthuthukiswe ukuncintisana kwamazwe ngamazwe emikhakheni ehlobene.
2. Ukuthuthukiswa kobuchwepheshe bei-avalanche photodetector(Isitholi sesithombe se-APD)
2.1 Izinto zokwakha
(1)I-photodetector
Ubuchwepheshe bezinto ze-Si ubuchwepheshe obuvuthiwe obusetshenziswa kakhulu emkhakheni we-microelectronics, kodwa abufanele ukulungiswa kwamadivayisi ebangeni le-wavelength elingu-1.31mm no-1.55mm ngokuvamile amukelwa emkhakheni wokuxhumana okubonakalayo.
(2) Ge
Nakuba impendulo ye-spectral ye-Ge APD ifaneleka izidingo zokulahlekelwa okuphansi kanye nokuhlakazeka okuphansi ekudlulisweni kwe-fiber optical, kukhona ubunzima obukhulu enqubweni yokulungiselela.Ukwengeza, isilinganiso se-electron ne-hole ionization rate sisondele ku-() 1, ngakho-ke kunzima ukulungisa amadivaysi e-APD asebenza kahle kakhulu.
(3)In0.53Ga0.47As/InP
Kuyindlela esebenzayo yokukhetha i-In0.53Ga0.47As njengesendlalelo sokumunca ukukhanya se-APD ne-InP njengesendlalelo sokuphindaphinda.Isiqongo sokumuncwa se-In0.53Ga0.47As singu-1.65mm, 1.31mm, 1.55mm wavelength cishe i-coefficient ephezulu yokumunca engu-104cm-1, okuyinto ekhethwayo yesendlalelo sokumunca sesitshina sokukhanya okwamanje.
(4)Isithwebuli sezithombe se-InGaAs/Ngenai-photodetector
Ngokukhetha i-InGaAsP njengongqimba olumunca ukukhanya kanye ne-InP njengesendlalelo esiphindaphindayo, i-APD enobude begagasi bokuphendula obungu-1-1.4mm, ukusebenza kahle kwe-quantum, ubumnyama obuphansi bamanje kanye nokuzuza okuphezulu kwe-avalanche kungalungiselelwa.Ngokukhetha izingxenye ezihlukene ze-alloy, ukusebenza okungcono kakhulu kwamaza wamaza athile kufinyelelwa.
(5)InGaAs/InAlAs
I-In0.52Al0.48As impahla inegebe yebhendi (1.47eV) futhi ayimunzi ebangeni le-wavelength elingu-1.55mm.Kunobufakazi bokuthi ungqimba oluncane lwe-In0.52Al0.48A njenge-epitaxial lungathola izici ezingcono zokuzuza kune-InP njengongqimba lwesiphindaphinda ngaphansi kwesimo somjovo we-electron omsulwa.
(6)I-InGaAs/InGaAs (P) /InAlAs kanye ne-InGaAs/In (Al) GaAs/InAlAs
Izinga le-ionization yomthelela yezinto ezibonakalayo liyisici esibalulekile esithinta ukusebenza kwe-APD.Imiphumela ibonisa ukuthi izinga lokushayisana kwe-ionization lesendlalelo sokuphindaphinda lingathuthukiswa ngokwethula i-InGaAs (P) /InAlAs kanye ne-In (Al) GaAs/InAlAs izakhiwo ze-superlattice.Ngokusebenzisa ukwakheka kwe-superlattice, ubunjiniyela bebhendi bungakwazi ukulawula ngokuzenzela ukungaqhubeki konqenqema lwebhendi ye-asymmetric phakathi kwebhendi yokuqhuba namavelu ebhendi ye-valence, futhi kuqinisekiswe ukuthi ukungaqhubeki kwebhendi yokuqhuba kukhulu kakhulu kunokungaqhubeki kwebhendi ye-valence (ΔEc>>ΔEv).Uma kuqhathaniswa nezinto eziyinqwaba ze-InGaAs, izinga le-InGaAs/InAlAs le-quantum ye-electron ionization ye-quantum (a) likhuphuka kakhulu, futhi ama-electron nezimbobo zithola amandla engeziwe.Ngenxa ye-ΔEc>>ΔEv, kungalindelwa ukuthi amandla atholwe ama-electron akhuphula izinga le-ionization ye-electron kakhulu kunomnikelo wamandla embobo emgodini we-ionization rate (b).Isilinganiso (k) sezinga le-ionization ye-electron kuya kwezinga le-ionization yembobo liyakhuphuka.Ngakho-ke, umkhiqizo we-high gain-bandwidth (GBW) kanye nokusebenza komsindo ophansi kungatholwa ngokusebenzisa izakhiwo ze-superlattice.Nokho, le-InGaAs/InAlAs ye-quantum well structure APD, engakhuphula inani lika-k, kunzima ukuyisebenzisa kumamukeli obonakalayo.Lokhu kungenxa yokuthi isici sokuphindaphinda esithinta ukusabela okuphezulu sikhawulelwe amandla amnyama, hhayi umsindo wokuphindaphinda.Kulesi sakhiwo, i-current emnyama ibangelwa ikakhulukazi umthelela wokudonsa wesendlalelo somthombo we-InGaAs onegebe elincane lebhande, ngakho-ke ukwethulwa kwe-alloy ye-quaternary alloy ye-gap ebanzi, njenge-InGaAsP noma i-InAlGaAs, esikhundleni se-InGaAs njengesendlalelo somthombo. yesakhiwo somthombo we-quantum singacindezela umsinga omnyama.
Isikhathi sokuthumela: Nov-13-2023