I-Rof EOM Intensity Modulator 20G ifilimu encane ye-lithium niobate Electro-Optic Modulator
Isici
■ Umkhawulokudonsa we-RF ongafika ku-20/40 GHz
■ I-voltage ephansi yamagagasi angamahafu
■ Ukulahlekelwa kokufakwayo kuze kube ku-4.5dB
■ Usayizi wedivayisi encane
Ipharamitha C-band
| Isigaba | Ukuphikisana | I-Sym | Uni | I-Aointer | |
| Ukusebenza kwe-Optical (@25°C) | Ubude begagasi obusebenzayo (*) | λ | nm | X2:C | |
| ~ 1550 | |||||
| I-Optical extinction ratio (@DC) (**) | ER | dB | ≥ 20 | ||
| Ukulahlekelwa okubonakalayo kokubuya
| ORL | dB | ≤ -27 | ||
| Ukulahleka kokufakwa kokubona (*) | IL | dB | Ubukhulu: 5.5Uhlobo: 4.5 | ||
| Izakhiwo zikagesi (@25°C)
| 3 dB i-electro-optical bandwidth (kusuka ku-2 GHz | S21 | GHz | X1: 2 | X1: 4 |
| MIN: 18Typ: 20 | MIN: 36Typ: 40 | ||||
| I-Rf half wave voltage (@50 kHz)
| Vπ | V | X3:5 | X3:6 | |
| Ubukhulu: 3.0Uhlobo: 2.5 | Ubukhulu: 3.5Uhlobo: 3.0 | ||||
| Amandla we-wave ayingxenye yokushisa ashintshiwe | Pp | mW | ≤ 50 | ||
| Ukulahlekelwa kokubuya kwe-Rf (2 GHz ukuya ku-40 GHz)
| I-S11 | dB | ≤ -10 | ||
| Isimo sokusebenza
| Izinga lokushisa lokusebenza | TO | °C | -20 ~ 70 | |
* ngokwezifiso** Isilinganiso sokuqothulwa okuphezulu (> 25 dB) singenziwa ngendlela oyifisayo.
Ipharamitha O-band
| Isigaba | Ukuphikisana | I-Sym | Uni | I-Aointer | |
| Ukusebenza kwe-Optical (@25°C) | Ubude begagasi obusebenzayo (*) | λ | nm | X2:O | |
| ~ 1310 | |||||
| I-Optical extinction ratio (@DC) (**) | ER | dB | ≥ 20 | ||
| Ukulahlekelwa okubonakalayo kokubuya
| ORL | dB | ≤ -27 | ||
| Ukulahleka kokufakwa kokubona (*) | IL | dB | Ubukhulu: 5.5Uhlobo: 4.5 | ||
| Izakhiwo zikagesi (@25°C)
| 3 dB i-electro-optical bandwidth (kusuka ku-2 GHz | S21 | GHz | X1: 2 | X1: 4 |
| MIN: 18Typ: 20 | MIN: 36Typ: 40 | ||||
| I-Rf half wave voltage (@50 kHz)
| Vπ | V | X3:4 | ||
| Ubukhulu: 2.5Uhlobo: 2.0 | |||||
| Amandla we-wave ayingxenye yokushisa ashintshiwe | Pp | mW | ≤ 50 | ||
| Ukulahlekelwa kokubuya kwe-Rf (2 GHz ukuya ku-40 GHz)
| I-S11 | dB | ≤ -10 | ||
| Isimo sokusebenza
| Izinga lokushisa lokusebenza | TO | °C | -20 ~ 70 | |
* ngokwezifiso** Isilinganiso sokuqothulwa okuphezulu (> 25 dB) singenziwa ngendlela oyifisayo.
Umkhawulo wokulimala
Uma idivayisi yeqa umkhawulo womonakalo omkhulu, izodala umonakalo ongalungiseki ocingweni, futhi lolu hlobo lomonakalo wedivayisi alumboziwe isevisi yokulungisa.
| Aukungqubuzana | I-Sym | Skukhethwa | MIN | MAX | Uni |
| Amandla wokufaka we-Rf | Isono | - | 18 | dBm | Isono |
| I-voltage yokufaka ye-Rf | Vpp | -2.5 | +2.5 | V | Vpp |
| I-voltage ye-RMS yokufaka i-RF | Vrms | - | 1.78 | V | Vrms |
| Amandla okufaka okubonayo | Phina | - | 20 | dBm | Phina |
| I-voltage ye-thermotuned bias | I-Uheater | - | 4.5 | V | I-Uheater |
| I-Hot Tuning bias yamanje
| Iheater | - | 50 | mA | Iheater |
| Izinga lokushisa lesitoreji | TS | -40 | 85 | ℃ | TS |
| Umswakama ohlobene (akukho ukufingqa) | RH | 5 | 90 | % | RH |
Isampula yokuhlola ye-S21
I-FIG1: S21
I-FIG2: I-S11
Oda ulwazi
Ifilimu ezacile i-lithium niobate 20 GHz/40 GHz intensity module
| okukhethekayo | Incazelo | okukhethekayo | |
| X1 | 3 dB i-electro-optical bandwidth | 2or4 | |
| X2 | Ubude begagasi obusebenzayo | O or C | |
| X3 | Amandla okufaka e-RF aphezulu | I-C-band5 or 6 | O- ibhande4 |
I-Rofea Optoelectronics inikezela ngomugqa womkhiqizo wamamojula wezohwebo we-Electro-optic, ama-Modulator wesigaba, i-Intensity modulator, izithombo, imithombo yokukhanya kwe-Laser, ama-laser e-DFB, ama-Optical amplifiers, i-EDFA, i-SLD laser, i-QPSK modulation, i-Pulse laser, i-Light detector, i-Balanced power driver, i-Optical power laser, i-Optical power laser, i-Optical power laser I-laser tunable, i-Optical detector, i-Laser diode driver, i-Fiber amplifier. Siphinde futhi sinikeze amamoduli athile athile ukuze enze ngokwezifiso, njengamamodulators wesigaba esingu-1*4 array, i-Vpi ephansi kakhulu, kanye namamodulators wesilinganiso sokuqothulwa okuphezulu kakhulu, asetshenziswa kakhulu emanyuvesi nasezikhungweni.
Sethemba ukuthi imikhiqizo yethu izoba usizo kuwe kanye nocwaningo lwakho.









