I-Rof EOM Intensity Modulator engu-20G ifilimu encane ye-lithium niobate Electro-Optic Modulator

Incazelo emfushane:

I-Thin film lithium niobate intensity modulator iyidivayisi yokuguqula i-electro-optical esebenza kahle kakhulu, ethuthukiswe ngokuzimela yinkampani yethu futhi inamalungelo obunikazi obuphelele azimele. Umkhiqizo upakishwe ngobuchwepheshe bokuhlanganisa obunembe kakhulu ukuze kufezwe ukusebenza kahle kokuguqulwa kwe-electro-optical okuphezulu kakhulu. Uma kuqhathaniswa ne-lithium niobate crystal modulator yendabuko, lo mkhiqizo unezici ze-voltage ephansi ye-half-wave, ukuzinza okuphezulu, usayizi omncane wedivayisi kanye nokulawula i-thermo-optical bias, futhi ungasetshenziswa kabanzi ekuxhumaneni kwe-digital optical, ama-microwave photonics, amanethiwekhi okuxhumana komgogodla kanye namaphrojekthi ocwaningo lokuxhumana.


Imininingwane Yomkhiqizo

I-Rofea Optoelectronics inikeza imikhiqizo ye-Optical kanye ne-photonics Electro-optic modulators

Amathegi Omkhiqizo

Isici

■ Ububanzi be-RF obufika ku-20/40 GHz

■ I-voltage ephansi yesigamu-igagasi

■ Ukulahlekelwa kokufakwa okuphansi njengo-4.5dB

■ Usayizi wedivayisi omncane

I-Rof EOM Intensity Modulator engu-20G ifilimu encane ye-lithium niobate modulator i-TFLN modulator

Ibhendi ye-C yepharamitha

Isigaba

Impikiswano

I-Sym I-Uni I-Aointer

Ukusebenza kokukhanya

(@25°C)

Ubude besikhathi obusebenzayo (*) λ nm X2C
~1550
Isilinganiso sokuphela kokukhanya (@DC) (**) ER dB ≥ 20

Ukulahleka kokubuya kokukhanya

I-ORL dB ≤ -27

Ukulahlekelwa kokufakwa kokukhanya (*)

IL dB OKUPHEZULU: 5.5Uhlobo: 4.5

Izakhiwo zikagesi (@25°C)

I-bandwidth ye-electro-optical engu-3 dB (kusukela ku-2 GHz)

S21 I-GHz X1: 2 X1: 4
MIN: 18Uhlobo: 20 MIN: 36Uhlobo: 40

I-voltage ye-Rf half wave (@50 kHz)

Vπ V X35 X36
OKUPHEZULU: 3.0Uhlobo: 2.5 OKUPHEZULU: 3.5Uhlobo: 3.0
Amandla wegagasi elilinganiselwe lokushisa ahlukaniswe yi-bias half wave I-Pπ mW ≤ 50

Ukulahleka kokubuya kwe-RF (2 GHz kuya ku-40 GHz)

S11 dB ≤ -10

Isimo sokusebenza

Izinga lokushisa lokusebenza

TO °C -20~70

* ngezifiso** Isilinganiso esiphezulu sokuphela (> 25 dB) singenziwa ngokwezifiso.

I-Parameter O-band

Isigaba

Impikiswano

I-Sym I-Uni I-Aointer

Ukusebenza kokukhanya

(@25°C)

Ubude besikhathi obusebenzayo (*) λ nm X2O
~1310
Isilinganiso sokuphela kokukhanya (@DC) (**) ER dB ≥ 20

Ukulahleka kokubuya kokukhanya

I-ORL dB ≤ -27

Ukulahlekelwa kokufakwa kokukhanya (*)

IL dB OKUPHEZULU: 5.5Uhlobo: 4.5

Izakhiwo zikagesi (@25°C)

I-bandwidth ye-electro-optical engu-3 dB (kusukela ku-2 GHz)

S21 I-GHz X1: 2 X1: 4
MIN: 18Uhlobo: 20 MIN: 36Uhlobo: 40

I-voltage ye-Rf half wave (@50 kHz)

Vπ V X34
OKUPHEZULU: 2.5Uhlobo: 2.0
Amandla wegagasi elilinganiselwe lokushisa ahlukaniswe yi-bias half wave I-Pπ mW ≤ 50

Ukulahleka kokubuya kwe-RF (2 GHz kuya ku-40 GHz)

S11 dB ≤ -10

Isimo sokusebenza

Izinga lokushisa lokusebenza

TO °C -20~70

* ngezifiso** Isilinganiso esiphezulu sokuphela (> 25 dB) singenziwa ngokwezifiso.

Umkhawulo womonakalo

Uma idivayisi idlula umkhawulo womonakalo omkhulu, izobangela umonakalo ongenakulungiseka kudivayisi, futhi lolu hlobo lomonakalo wedivayisi alumbozwa yisevisi yokulungisa.

Aimpikiswano

I-Sym Sokukhethekayo MIN I-MAX I-Uni

Amandla okufaka e-Rf

Isono - 18 i-dBm Isono

I-voltage yokushintsha yokufaka ye-Rf

I-Vpp -2.5 +2.5 V I-Vpp

I-voltage ye-RMS yokufaka i-Rf

Ama-Vrms - 1.78 V Ama-Vrms

Amandla okufaka okubonakalayo

Iphinikhodi - 20 i-dBm Iphinikhodi

I-voltage ye-bias e-thermotuned

I-Uheater - 4.5 V I-Uheater

Ukushisa kwe-bias current

I-heater - 50 mA I-heater

Izinga lokushisa lesitoreji

TS -40 85 TS

Umswakama ohlobene (akukho ukujiya)

RH 5 90 % RH

Isampula yokuhlola ye-S21

UMFANEKISO1: S21

UMFANEKISO2: S11

Ulwazi lwe-oda

I-lithium yefilimu encane i-niobate engu-20 GHz/40 GHz intensity modulator

okungakhethwa Incazelo okungakhethwa
X1 I-bandwidth ye-electro-optical engu-3 dB 2or4
X2 Ubude besikhathi obusebenzayo O or C
X3 Amandla okufaka aphezulu e-RF Ibhendi ye-C5 or 6 O-ibhendi4

  • Okwedlule:
  • Olandelayo:

  • I-Rofea Optoelectronics inikeza umugqa womkhiqizo wama-modulator e-Electro-optic athengiswayo, ama-Phase modulator, i-Intensity modulator, ama-Photodetector, imithombo yokukhanya ye-Laser, ama-DFB laser, ama-Optical amplifiers, i-EDFA, i-SLD laser, i-QPSK modulation, i-Pulse laser, i-Light detector, i-Balanced photodetector, i-Laser driver, i-Fiber optic amplifier, i-Optical power meter, i-Broadband laser, i-Tunable laser, i-Optical detector, i-Laser diode driver, i-Fiber amplifier. Siphinde sinikeze ama-modulator amaningi athile okwenza ngezifiso, njenge-1*4 array phase modulators, i-ultra-low Vpi, kanye nama-ultra-high extinction ratio modulators, asetshenziswa kakhulu emanyuvesi nasezikhungweni.
    Ngiyethemba ukuthi imikhiqizo yethu izokusiza wena kanye nocwaningo lwakho.

    Imikhiqizo Ehlobene