Umgomo wokusebenza kanye nezinhlobo eziyinhloko zei-laser ye-semiconductor
I-semiconductorAma-diode e-laser, ngokusebenza kahle kwazo okuphezulu, ukwenziwa okuncane kanye nokuhlukahluka kwamaza, zisetshenziswa kabanzi njengezingxenye eziyinhloko zobuchwepheshe be-optoelectronic emikhakheni efana nokuxhumana, ukunakekelwa kwezokwelapha kanye nokucubungula kwezimboni. Lesi sihloko siqhubeka sethula isimiso sokusebenza kanye nezinhlobo zama-semiconductor lasers, okulula ukubhekisela ekukhetheni iningi labacwaningi be-optoelectronic.
1. Umgomo wokukhipha ukukhanya wama-laser e-semiconductor
Umgomo wokukhanya kwama-laser e-semiconductor usekelwe esakhiweni sebhendi, ukuguquka kwe-elekthronikhi kanye nokukhishwa okukhuthazwayo kwezinto ze-semiconductor. Izinto ze-semiconductor luhlobo lwezinto ezine-bandgap, ehlanganisa ibhendi ye-valence kanye nebhendi yokuhambisa. Lapho izinto zisesimweni somhlabathi, ama-electron agcwalisa ibhendi ye-valence kuyilapho kungekho ma-electron ebhendini yokuhambisa. Lapho insimu ethile kagesi isetshenziswa ngaphandle noma kufakwe ugesi, amanye ama-electron azoshintsha esuka ebhendini ye-valence aye ebhendini yokuhambisa, akhe ama-electron-hole pair. Ngesikhathi senqubo yokukhululwa kwamandla, lapho la ma-electron-hole pair ekhuthazwa yizwe langaphandle, kuzokhiqizwa ama-photon, okungukuthi, ama-laser.
2. Izindlela zokuvusa amadlingozi zama-laser e-semiconductor
Kunezindlela ezintathu eziyinhloko zokuvusa ama-laser e-semiconductor, okungukuthi uhlobo lomjovo kagesi, uhlobo lwephampu ye-optical kanye nohlobo lokuvusa ama-electron beam anamandla aphezulu.
Ama-laser e-semiconductor ajovwe ngogesi: Ngokuvamile, angama-diode e-semiconductor surface-junction enziwe ngezinto ezifana ne-gallium arsenide (GaAs), i-cadmium sulfide (CdS), i-indium phosphide (InP), kanye ne-zinc sulfide (ZnS). Avuselelwa ngokujova ugesi eduze kwe-forward bias, okwenza ukukhishwa okukhuthaziwe esifundeni se-junction plane.
Ama-laser e-semiconductor afakwe optically pumped: Ngokuvamile, amakristalu e-semiconductor single-type N noma P-type (njenge-GaAS, InAs, InSb, njll.) asetshenziswa njengento esebenzayo, futhii-laserokukhishwa ngamanye ama-laser kusetshenziswa njenge-optical pumped excitation.
Ama-laser e-semiconductor asebenzisa ugongolo lwe-electron olunamandla aphezulu: Ngokuvamile, asebenzisa namakristalu e-semiconductor single-type N noma P-type (njenge-PbS,CdS,ZhO, njll.) njengento esebenzayo futhi avuselelwa ngokufaka ugongolo lwe-electron olunamandla aphezulu oluvela ngaphandle. Phakathi kwamadivayisi e-laser e-semiconductor, enekhono lokusebenza elingcono kanye nokusetshenziswa okubanzi yi-laser ye-diode ye-GaAs efakwe ngogesi enesakhiwo esiphindwe kabili.
3. Izinhlobo eziyinhloko zama-laser e-semiconductor
Isifunda Esisebenzayo se-laser ye-semiconductor siyindawo eyinhloko yokukhiqizwa kwe-photon kanye nokwandiswa, futhi ubukhulu bayo bungama-micrometer ambalwa kuphela. Izakhiwo zangaphakathi ze-waveguide zisetshenziselwa ukuvimbela ukusabalala kwama-photon ohlangothini futhi kuthuthukiswe ubuningi bamandla (njenge-ridge waveguides kanye ne-hterojunctions ezifihliwe). I-laser isebenzisa umklamo we-heat sink futhi ikhetha izinto zokushisa eziphezulu (njenge-copper-tungsten alloy) ukuze kusheshiswe ukushisa okusheshayo, okungavimbela ukukhukhuleka kwe-wavelength okubangelwa ukushisa ngokweqile. Ngokwesakhiwo sabo kanye nezimo zokusetshenziswa, ama-semiconductor lasers angahlukaniswa ngezigaba ezine ezilandelayo:
I-Laser Ekhipha Unqenqema (i-EEL)
I-laser iphuma ebusweni bokuqhekeka ohlangothini lwe-chip, yakha indawo efana ne-elliptical (ene-engeli yokwehlukana engaba ngu-30°×10°). Ama-wavelength ajwayelekile afaka phakathi i-808nm (yokupompa), i-980 nm (yokuxhumana), kanye ne-1550 nm (yokuxhumana ngefayibha). Isetshenziswa kabanzi ekusikeni kwezimboni okunamandla amakhulu, imithombo yokupompa nge-laser yefayibha, kanye namanethiwekhi omgogodla wokuxhumana kwe-optical.
2. I-Laser Ekhipha Ubuso Be-Vertical Cavity (VCSEL)
I-laser ikhishwa ngokuqondile ebusweni be-chip, ngomsebe oyindilinga nowesilinganiselo (i-divergence Angle <15°). Ihlanganisa i-distributed Bragg reflector (DBR), okususa isidingo se-external reflector. Isetshenziswa kabanzi ekuzweleni kwe-3D (njengokuqashelwa kobuso befoni ephathekayo), ukuxhumana kwe-optical okufushane (izikhungo zedatha), kanye ne-LiDAR.
3. I-Quantum Cascade Laser (QCL)
Ngokusekelwe ekushintsheni kwama-electron phakathi kwe-quantum Wells, ubude be-wavelength bumboza ububanzi be-infrared obuphakathi kuya kude (3-30 μm), ngaphandle kwesidingo sokuguqulwa kwabantu. Ama-photon akhiqizwa ngokushintshana kwe-intersubband futhi avame ukusetshenziswa ezinhlelweni zokusebenza ezifana nokuzwa igesi (njengokubona i-CO₂), ukuthwebula izithombe ze-terahertz, kanye nokuqapha indawo ezungezile.
Idizayini yangaphandle ye-laser elungisekayo (isibuko se-grating/prism/MEMS) ingafinyelela ububanzi bokuhlela ubude be-wavelength obungu-±50 nm, ngobubanzi obuncane bomugqa (<100 kHz) kanye nesilinganiso sokulahlwa kwemodi eseceleni ephezulu (>50 dB). Ivame ukusetshenziswa ezinhlelweni zokusebenza ezifana nokuxhumana kwe-dense wavelength division multiplexing (DWDM), ukuhlaziywa kwe-spectral, kanye nokuthwebula izithombe ze-biomedical. Ama-laser e-semiconductor asetshenziswa kabanzi kumadivayisi e-laser okuxhumana, amadivayisi okugcina i-laser yedijithali, imishini yokucubungula i-laser, imishini yokumaka neyokupakisha i-laser, ukusetha nokushicilela i-laser, imishini yezokwelapha ye-laser, amathuluzi okuthola ibanga le-laser kanye ne-collimation, amathuluzi e-laser kanye nemishini yokuzijabulisa nemfundo, izingxenye ze-laser nezingxenye, njll. Ziyingxenye yezingxenye eziyinhloko zomkhakha we-laser. Ngenxa yobubanzi bayo bezicelo, kunezinhlobo eziningi zemikhiqizo nabakhiqizi bama-laser. Lapho ukhetha, kufanele kusekelwe ezidingweni ezithile kanye nezinkambu zohlelo lokusebenza. Abakhiqizi abahlukene banezinhlelo zokusebenza ezahlukene emikhakheni eyahlukene, futhi ukukhethwa kwabakhiqizi nama-laser kufanele kwenziwe ngokuya ngenkambu yohlelo lokusebenza yangempela yephrojekthi.
Isikhathi sokuthunyelwe: Novemba-05-2025