Isimiso sokusebenza nezinhlobo eziyinhloko ze-laser semiconductor

Isimiso sokusebenza kanye nezinhlobo eziyinhloko zeI-semiconductor laser

I-semiconductorAma-laser diode, ngokusebenza kahle kwazo okuphezulu, i-miniaturization kanye nokuhlukahluka kwe-wavelength, zisetshenziswa kabanzi njengezingxenye eziyinhloko zobuchwepheshe be-optoelectronic emikhakheni efana nokuxhumana, ukunakekelwa kwezokwelapha kanye nokucutshungulwa kwezimboni. Lesi sihloko sethula futhi isimiso sokusebenza nezinhlobo zama-lases semiconductor, alungele ukubhekwa kweningi labacwaningi be-optoelectronic.

1. Umgomo wokukhipha ukukhanya kwama-lasemiconductor lasers

Umgomo we-luminescence wama-lasemiconductor lasers usekelwe esakhiweni sebhendi, uguquko lwe-elekthronikhi kanye nokukhishwa okugqugquzelwe kwezinto ezisetshenziswayo ze-semiconductor. Izinto zokwakha ze-Semiconductor ziwuhlobo lwempahla ene-bandgap, ehlanganisa ibhande le-valence kanye nebhendi yokuqhuba. Uma impahla isesimweni esiphansi, ama-electron agcwalisa ibhande le-valence kuyilapho engekho ama-electron ebhendi yokuqhuba. Uma inkambu ethile kagesi isetshenziswa ngaphandle noma i-curse ijovwa, amanye ama-electron azoshintsha asuke ebhendini ye-valence aye ebhendini yokuqhuba, enze amapheya e-electron-hole. Phakathi nenqubo yokukhishwa kwamandla, lapho lezi zimbobo ze-electron-hole zikhuthazwa yizwe langaphandle, ama-photon, okungukuthi, ama-lasers, azokhiqizwa.

2. Izindlela ezivusa amadlingozi zama-lasemiconductor lasers

Ikakhulukazi kunezindlela ezintathu zokuvusa amadlingozi zama-lasemiconductor lasers, okuwuhlobo lomjovo kagesi, uhlobo lwephampu optical kanye nohlobo oluvusa amadlingozi we-electron beam.

Amalaser we-semiconductor afakwe ngogesi: Ngokuvamile, ama-semiconductor surface-junction diode enziwe ngezinto ezifana ne-gallium arsenide (GaAs), i-cadmium sulfide (CdS), i-indium phosphide (InP), ne-zinc sulfide (ZnS). Ajabulile ngokujova amandla ahambisana nokuchema okuya phambili, okukhiqiza umusi okhuthazwayo endaweni yendiza ehlanganayo.

Amalaser esemiconductor ampontshwa ngokubona: Ngokuvamile, amakristalu e-semiconductor eyodwa yohlobo lwe-N noma i-P (njenge-GaAS,InAs,InSb, njll.) asetshenziswa njengento esebenzayo, futhilaserekhishwa ngamanye ama-lasers isetshenziswa njenge-excitation empontshwa ngokubona.

Amandla aphezulu we-electron beam-excited semiconductor lasers: Ngokuvamile, asebenzisa ama-semiconductor single crystals ohlobo lwe-N noma lwe-P (njenge-PbS,CdS,ZhO, njll.) njengento esebenzayo futhi ajatshuliswa ukujova i-electron beam enamandla amakhulu kusukela ngaphandle. Phakathi kwemishini ye-laser ye-semiconductor, leyo esebenza kangcono nesebenza ngobubanzi i-GaAs diode laser ejovwe ngogesi ene-heterostructure ephindwe kabili.

3. Izinhlobo eziyinhloko zama-lasemiconductor lasers

Isifunda Esisebenzayo se-laser ye-semiconductor iyindawo eyinhloko yokukhiqizwa kwe-photon nokukhulisa, futhi ukushuba kwayo kungama-micrometer ambalwa kuphela. Izakhiwo ze-waveguide zangaphakathi zisetshenziselwa ukukhawulela ukusakazeka kwe-lateral kwama-photons futhi kuthuthukise ukuminyana kwamandla (njengama-ridge waveguide nama-heterojunctions angcwatshwe). I-laser yamukela idizayini yokucwilisa ukushisa bese ikhetha izinto ezisetshenziswayo ezishisayo (ezifana ne-copper-tungsten alloy) ukuze kukhishwe ukushisa ngokushesha, okungavimbela ukukhukhuleka kwe-wavelength okubangelwa ukushisa ngokweqile. Ngokwesakhiwo sabo kanye nezimo zokusetshenziswa, ama-lasemiconductor lasers angahlukaniswa abe yizigaba ezine ezilandelayo:

I-Edge-Emitting Laser (EEL)

I-laser iphuma endaweni evulekile ehlangothini lwe-chip, yakhe indawo eyi-elliptical (ene-engeli ehlukile ecishe ibe ngu-30°×10°). Amaza amaza ajwayelekile ahlanganisa u-808nm (wokumpompa), 980 nm (owokuxhumana), kanye no-1550 nm (wokuxhumana ngefayibha). Isetshenziswa kabanzi ekusikeni izimboni ezinamandla aphezulu, imithombo yokupompa i-fiber laser, kanye namanethiwekhi omgogodla wokuxhumana optical.

2. I-Vertical Cavity Surface Emitting Laser (VCSEL)

I-laser ikhishwa perpendicularly ebusweni be-chip, ngensimbi eyindilinga ne-symmetrical (i-divergence Angle <15 °). Ihlanganisa i-Bragg reflector (DBR) esabalalisiwe, isuse isidingo sesibonisi sangaphandle. Isetshenziswa kakhulu ezinzwa ze-3D (ezifana nokubonwa kobuso beselula), ukuxhumana nokubona kwebanga elifushane (izikhungo zedatha), kanye ne-LiDAR.

3. I-Quantum Cascade Laser (QCL)

Ngokusekelwe ekushintsheni kwe-cascade yama-electron phakathi kwe-quantum Wells, ubude begagasi bumboza ububanzi be-infrared obuphakathi nendawo ukuya kude (3-30 μm), ngaphandle kwesidingo sokuguqulwa kwabantu. Amafothoni akhiqizwa ngokushintsha kwe-intersubband futhi avame ukusetshenziswa ezinhlelweni ezifana nokuzwa igesi (njengokuthola i-CO₂), imaging ye-terahertz, nokuqapha indawo ezungezile.

4. I-Laser ye-Tunable

Idizayini ye-laser yesikhala yangaphandle (isibuko se-grating/prism/MEMS) ingafinyelela ububanzi bokushuna be-wavelength obungu-±50 nm, ngobubanzi bomugqa obuncane (<100 kHz) kanye nesilinganiso sokunqatshwa kwemodi eseceleni ephezulu (>50 dB). Ivame ukusetshenziswa ezinhlelweni ezifana ne-dense wavelength division multiplexing (DWDM) ukuxhumana, ukuhlaziywa kwe-spectral, kanye ne-biomedical imaging. Ama-laser we-semiconductor asetshenziswa kakhulu kumadivayisi we-laser zokuxhumana, amadivaysi esitoreji se-laser yedijithali, okokusebenza kwe-laser processing, imishini yokumaka nokupakisha nge-laser, ukusetha uhlobo lwe-laser nokuphrinta, imishini yezokwelapha ye-laser, ibanga le-laser kanye namathuluzi okubona ukuhlangana, amathuluzi e-laser kanye nemishini yokuzijabulisa nokufundisa, izingxenye ze-laser nezingxenye, njll. Ziyingxenye yezingxenye eziyinhloko embonini ye-laser. Ngenxa yobubanzi bayo bezinhlelo zokusebenza, kunezinhlobo eziningi zemikhiqizo nabakhiqizi bama-lasers. Lapho ukhetha, kufanele kusekelwe ezidingweni ezithile kanye nezinkambu zohlelo lokusebenza. Abakhiqizi abahlukene banezinhlelo zokusebenza ezihlukene emikhakheni ehlukahlukene, futhi ukukhethwa kwabakhiqizi nama-lasers kufanele kwenziwe ngokuya ngenkambu yesicelo sangempela sephrojekthi.