Imodeli yakamuva ye-ultra-high extinction ratio electro-optic

OkwakamuvaI-ultra-high extinction ratio electro-optic modulator

I-on-chip electro-optical modulators (i-silicon-based, i-triquinoid, ifilimu encane ye-lithium niobate, njll.) inezinzuzo zokubumbana, isivinini esikhulu kanye nokusetshenziswa kwamandla aphansi, kodwa kusenezinselele ezinkulu zokufeza ukuguquguquka kwamandla okuguquguqukayo nge-ultra-high extinction ratio. Muva nje, abacwaningi esikhungweni sokucwaninga esihlanganyelwe se-Fiber Optic Sensing enyuvesi yaseShayina benze intuthuko enkulu emkhakheni we-ultra-high extinction ratio electro-optical modulators kuma-silicon substrates. Ngokusekelwe kusakhiwo sokuhlunga se-optical sokuhleleka okuphezulu, i-silicon ye-on-chipi-electro-optic moduleisilinganiso sokuqothulwa esingafika ku-68 dB sitholwa okokuqala. Usayizi nokusetshenziswa kwamandla kuyizilinganiso ezimbili zobukhulu ezincane kunezomdabuI-AOM module, futhi ukuba nokwenzeka kokusetshenziswa kwedivayisi kuqinisekiswa ohlelweni lwelabhorethri ye-DAS.

Umfanekiso 1 Umdwebo wohlelo lwedivayisi yokuhlola ye-ultraimodyuli ye-electro-optic ratio ephezulu

I-silicon-basedi-electro-optical modulengokusekelwe esakhiweni sesihlungi se-microring esihlanganisiwe sifana nesihlungi sikagesi sakudala. Imoduli ye-electro-optic ifinyelela ukuhlunga kwe-bandpass eyisicaba kanye nesilinganiso esiphakeme sokulahlwa kwe-out-of-band (>60 dB) ngochungechunge lokuhlanganisa ama-microring resonator amane asekelwe ku-silicon. Ngosizo lwe-Pin-type electro-optical phase shifter ku-microring ngayinye, i-spectrum yokudlulisa ye-modulator ingashintshwa kakhulu ku-voltage ephansi esetshenzisiwe (<1.5 V). Isilinganiso esiphezulu sokunqatshwa kwebhendi esihlanganiswe nesici sokugoqelwa phansi kwesihlungi esiwummango sinika amandla amandla okukhanya okokufaka eduze nobude begagasi obuzwakalayo ukuze bulungiswe ngokugqama okukhulu kakhulu, okusiza kakhulu ekukhiqizweni kwamapulse wokukhanya wesilinganiso sokuqothula okuphezulu kakhulu.

Ukuze kuqinisekiswe amandla okushintsha amandla emodeli ye-electro-optic, ithimba liqale labonisa ukuhluka kokudluliswa kwedivayisi nge-voltage ye-DC kubude begagasi lokusebenza. Kuyabonakala ukuthi ngemuva kwe-1 V, ukudluliswa kwe-transmittance kwehla kakhulu ngaphezu kwe-60 dB. Ngenxa yomkhawulo wezindlela ezivamile zokubheka i-oscilloscope, ithimba locwaningo lamukela indlela yokulinganisa ukuphazanyiswa kwe-self-heterodyne, futhi lisebenzisa ububanzi obuguquguqukayo obukhulu be-spectrometer ukuze libonise isilinganiso sokuqothulwa okunamandla okuphezulu kwe-modulator ngesikhathi sokushintshwa kwe-pulse. Imiphumela yokuhlola ibonisa ukuthi i-pulse yokukhanya ephumayo yemoduli inesilinganiso sokunyamalala esingafika ku-68 dB, kanye nesilinganiso sokunyamalala esingaphezu kuka-65 dB eduze nezindawo ezimbalwa zamaza amaza anomsindo. Ngemva kokubala okuningiliziwe, i-voltage yangempela yedrayivu ye-RF elayishwe ku-electrode icishe ibe ngu-1 V, futhi ukusetshenziswa kwamandla okuguquguqukayo kungu-3.6 mW kuphela, okungama-oda amabili obukhulu amancane kunokusetshenziswa kwamandla wemodulator ye-AOM evamile.

Ukusetshenziswa kwe-Silicon based electro-optic modulator ohlelweni lwe-DAS kungasetshenziswa ohlelweni lokutholwa okuqondile lwe-DAS ngokupakisha i-on-chip modulator. Ihluke ku-interferometry yesignali evamile yendawo ye-heterodyne, imodi yokunciphisa i-interferometry ye-Michelson engalingani iyamukelwa kulolu hlelo, ukuze umphumela wokushintsha imvamisa ye-optical we-modulator ungadingeki. Izinguquko zesigaba ezibangelwa amasiginali wokudlidliza we-sinusoidal zibuyiselwa ngempumelelo ngokudilizwa amasiginali ahlakazekile kaRayleigh eziteshini ezi-3 kusetshenziswa i-algorithm evamile ye-IQ yokudalula. Imiphumela ibonisa ukuthi i-SNR icishe ibe ngu-56 dB. Ukusatshalaliswa kwe-spectral density yamandla kubo bonke ubude be-sensor fiber ebangeni lefrikhwensi yesiginali ±100 Hz kuyaphenywa futhi. Ngaphandle kwesignali evelele endaweni yokudlidliza kanye nemvamisa, kuqashelwa ukuthi kunezimpendulo ezithile zokuminyana kwe-spectral yamandla kwezinye izindawo. Umsindo we-crosstalk ebangeni elingu-±10 Hz nangaphandle kwendawo yokudlidliza ulinganiswa ngobude befayibha, futhi i-SNR evamile esikhaleni ayikho ngaphansi kuka-33 dB.

Umfanekiso 2

i-Schematic diagram ye-optical fibre distributed acoustic sensing system.

b Ukuminyana kwe-spectral kwamandla esignali eyehlisiwe.

c, d amaza okudlidliza eduze nokusabalalisa kokuminyana kwe-spectral ku-fiber yezinzwa.

Lolu cwaningo luqala ukuzuza imodulator ye-electro-optical ku-silicon ene-ultra-high extinction ratio (68 dB), futhi yasetshenziswa ngempumelelo ezinhlelweni ze-DAS, futhi umphumela wokusetshenziswa kwemoduli ye-AOM yezentengiselwano useduze kakhulu, futhi usayizi nokusetshenziswa kwamandla kuyi-oda emibili yobukhulu emincane kunalena yakamuva, okulindeleke ukuthi ibambe iqhaza elibalulekile esizukulwaneni esilandelayo se-fiber sensia amandla amancane asatshalaliswa. Ngaphezu kwalokho, inqubo yokukhiqiza enkulu ye-CMOS kanye nekhono lokuhlanganisa i-on-chip ye-silicon-basedamadivaysi e-optoelectronicingakhuthaza kakhulu ukuthuthukiswa kwesizukulwane esisha samamojula ahlanganisiwe ahlanganisiwe we-monolithic angabizi kakhulu, asekelwe kumasistimu enzwa we-fiber esabalalisiwe.