Ucwaningo lwakamuva lwama-laser we-semiconductor anemibala emibili

Ucwaningo lwakamuva lwama-laser we-semiconductor anemibala emibili

Ama-laseser e-semiconductor disc (ama-laser e-SDL), aziwa nangokuthi ama-laser angaphandle aphuma mpo angaphandle (i-VECSEL), adonse ukunaka okukhulu eminyakeni yamuva nje. Ihlanganisa izinzuzo ze-semiconductor kanye nama-solid-state resonators. Akugcini nje ngokudambisa ngempumelelo umkhawulo wendawo ekhishwayo yokusekelwa kwemodi eyodwa kumalaser avamile we-semiconductor, kodwa futhi ifaka idizayini yebhande le-semiconductor eguquguqukayo nezici zokuzuza okuphezulu. Ingabonwa kuhlelo olubanzi lwezimo zohlelo, njengomsindo ophansii-laser enobubanzi obuncaneokukhiphayo, i-ultra-short high-repetition high-repetition pulse generation, i-high-order harmonic isizukulwane, nobuchwepheshe benkanyezi eqondisayo yesodium, njll. Ngokuthuthuka kobuchwepheshe, kuye kwabekwa izidingo eziphakeme ngenxa yokuguquguquka kwe-wavelength. Isibonelo, imithombo yokukhanya ehambisanayo yamaza amaza amabili ibonise inani eliphezulu kakhulu lesicelo ezinkambini ezisafufusa ezifana ne-anti-interference lidar, i-holographic interferometry, ukuxhumana kwe-wavelength division multiplexing, isizukulwane se-infrared noma i-terahertz, kanye namacombs efrikhwensi yemibala eminingi. Ukuthola kanjani ukugqama okuphezulu kokukhishwa kwemibala emibili kuma-laser e-semiconductor disc kanye nokucindezela ngempumelelo ukuncintisana kokuzuza phakathi kwamaza wamaza amaningi bekulokhu kuwubunzima bocwaningo kulo mkhakha.

Muva nje, umbala ombaxambiliI-semiconductor laserithimba e-China lenze isiphakamiso se-chip design entsha ukuze kubhekwane nale nselele. Ngocwaningo lwezinombolo olujulile, bathole ukuthi ukulawula ngokunembile inani elihlobene nezinga lokushisa lizuza kahle ukuhlunga kanye nemiphumela yokuhlunga ye-semiconductor microcavity kulindeleke ukuthi kuzuzwe ukulawula okuguquguqukayo kokuzuza kwemibala emibili. Ngokusekelwe kulokhu, ithimba liklame ngempumelelo i-chip yenzuzo yokukhanya okuphezulu engu-960/1000 nm. Le laser isebenza ngemodi eyisisekelo eduze komkhawulo wokuhlukanisa, ngokukhanya okukhiphayo okufika ku-310 MW/cm²sr.

Isendlalelo sokuzuza sediski ye-semiconductor singama-micrometer ambalwa kuphela, futhi i-Fabry-Perot microcavity iyakhiwa phakathi kwe-semiconductor-air interface kanye nesibonisi se-Bragg esabalaliswe phansi. Ukuphatha i-semiconductor microcavity njengesihlungi se-spectral esakhelwe ngaphakathi se-chip kuzoshintsha inzuzo ye-quantum kahle. Ngaleso sikhathi, umphumela wokuhlunga we-microcavity kanye nokuzuza kwe-semiconductor kunamazinga okushisa ahlukene okushisa. Kuhlanganiswe nokulawulwa kwezinga lokushisa, ukushintshwa kanye nokulawulwa kokukhishwa kwamaza wamaza kungafinyelelwa. Ngokusekelwe kulezi zici, ithimba libale futhi labeka inani eliphakeme lenzuzo ye-quantum kahle ku-950 nm ku-300 K izinga lokushisa, nezinga lokushisa lokukhukhula le-wavevel yenzuzo licishe libe ngu-0.37 nm/K. Ngokulandelayo, ithimba laklama isici esibambezelayo se-longitudinal se-chip sisebenzisa indlela ye-matrix yokudlulisela, enobude obuphezulu obucishe bube ngu-960 nm no-1000 nm ngokulandelanayo. Ukulingisa kwembula ukuthi izinga lokushisa lokukhukhuleka lalingu-0.08 nm/K kuphela. Ngokusebenzisa ubuchwepheshe bokufakwa kwe-metal-organic chemical vapor deposition ukukhula kwe-epitaxial kanye nokuthuthukisa ngokuqhubekayo inqubo yokukhula, ama-chips ekhwalithi ephezulu enziwa ngempumelelo. Imiphumela yokulinganisa ye-photoluminescence ihambisana ngokuphelele nemiphumela yokulingisa. Ukunciphisa umthwalo oshisayo futhi kuzuzwe ukudluliswa kwamandla aphezulu, inqubo yokupakisha ye-semiconductor-diamond chip iye yathuthukiswa nakakhulu.

Ngemva kokuqeda ukupakishwa kwe-chip, ithimba lenze ukuhlola okuphelele kokusebenza kwayo kwe-laser. Kumodi yokusebenza eqhubekayo, ngokulawula amandla epompo noma izinga lokushisa lokucwiliswa kokushisa, ubude be-wavelength bokukhishwa bungakwazi ukulungiswa kalula phakathi kuka-960 nm no-1000 nm. Uma amandla epompo engaphakathi kwebanga elithile, i-laser ingaphinda ithole ukusebenza kwamaza amaza amabili, ngesikhawu se-wavelength esingafika ku-39.4 nm. Ngalesi sikhathi, umkhawulo wamandla wamagagasi aqhubekayo afinyelela ku-3.8 W. Phakathi naleso sikhathi, i-laser isebenza kumodi eyisisekelo eduze komkhawulo wokuhlukanisa, enesici sekhwalithi ye-beam esingu-M² esingu-1.1 kuphela nokukhanya okuphakeme cishe okungango-310 MW/cm²sr. Ithimba liphinde lenza ucwaningo ngokusebenza kwegagasi okungama-quasi-continuous of thelaser. Isignali yefrikhwensi yesamba yabonwa ngempumelelo ngokufaka i-LiB₃O₅ ikristalu ye-optical nonlinear endaweni ye-resonant, eqinisekisa ukuvumelanisa kwamaza akabili.

Ngalo mklamo we-chip ohlakaniphile, inhlanganisela yezinto eziphilayo zokuhlunga kwe-quantum Well gain kanye nokuhlunga kwe-microcavity kufinyelelwe, ukubeka isisekelo sokuklama ukufezeka kwemithombo ye-laser enemibala emibili. Mayelana nezinkomba zokusebenza, le laser ye-single-chip dual-color laser ifinyelela ukukhanya okuphezulu, ukuguquguquka okuphezulu kanye nokuphuma okunembile kwe-coaxial beam. Ukukhanya kwayo kusezingeni elihamba phambili lamazwe ngamazwe emkhakheni wamanje we-single-chip dual-color semiconductor lasers. Mayelana nokusetshenziswa okungokoqobo, le mpumelelo kulindeleke ukuthi ithuthukise ngokuphumelelayo ukunemba kokutholwa kanye nekhono lokulwa nokuphazamiseka kwe-lidar enemibala eminingi ezindaweni eziyinkimbinkimbi ngokusebenzisa ukukhanya kwayo okuphezulu nezici ezinemibala emibili. Emkhakheni we-optical frequency Combs, okukhiphayo okuzinzile kwamaza amaza okukabili kunganikeza ukusekela okubalulekile kwezinhlelo zokusebenza ezifana nokulinganisa okunembile kwe-spectral kanye nokuzwa kokubonwa kokulungiswa okuphezulu.