Ucwaningo lwakamuva ngama-laser e-semiconductor anombala ombaxambili

Ucwaningo lwakamuva ngama-laser e-semiconductor anombala ombaxambili

Ama-laser e-semiconductor disc (ama-laser e-SDL), aziwa nangokuthi ama-laser angaphandle aphumayo (i-VECSEL), adonsele ukunaka okukhulu eminyakeni yamuva nje. Ahlanganisa izinzuzo zokuthola i-semiconductor kanye nama-resonator e-solid-state. Akugcini nje ngokunciphisa ngempumelelo umkhawulo wendawo yokukhishwa kokusekelwa kwemodi eyodwa kwama-laser e-semiconductor avamile, kodwa futhi anomklamo we-bandgap we-semiconductor oguquguqukayo kanye nezici zokuthola i-material ephezulu. Kungabonakala ezimweni eziningi zokusetshenziswa, njengomsindo ophansi.i-laser enobubanzi obuncaneumkhiqizo, ukukhiqizwa kwe-pulse ephindaphindayo ephezulu kakhulu, ukukhiqizwa kwe-harmonic ephezulu, kanye nobuchwepheshe bezinkanyezi eziqondisa i-sodium, njll. Ngokuthuthuka kobuchwepheshe, kuye kwabekwa phambili izidingo eziphakeme zokuguquguquka kwayo kwe-wavelength. Isibonelo, imithombo yokukhanya ehlanganisiwe ye-dual-wavelength ibonise inani eliphezulu kakhulu lokusetshenziswa emikhakheni ekhulayo njenge-anti-interference lidar, i-holographic interferometry, ukuxhumana kwe-wavelength division multiplexing, ukukhiqizwa kwe-mid-infrared noma i-terahertz, kanye nama-multi-color optical frequency combs. Indlela yokufinyelela ukukhanya okuphezulu kwe-dual-color emission kuma-laser e-semiconductor disc kanye nokucindezela ngempumelelo ukuncintisana kwe-gain phakathi kwama-wavelength amaningi bekulokhu kuyinselele yocwaningo kule nsimu.

Muva nje, kunombala ophindwe kabilii-laser ye-semiconductorIthimba laseShayina liphakamise umklamo we-chip omusha ukuze libhekane nale nselele. Ngocwaningo olujulile lwezinombolo, bathole ukuthi ukulawula ngokunembile ukuhlunga kwe-quantum well gain okuhlobene nokushisa kanye nemiphumela yokuhlunga ye-semiconductor microcavity kulindeleke ukuthi kufinyelele ekulawuleni okuguquguqukayo kwe-dual-color gain. Ngokusekelwe kulokhu, ithimba liphumelele ukuklama i-960/1000 nm high-brightness gain chip. Le laser isebenza kwimodi eyisisekelo eduze komkhawulo we-diffraction, ngokukhanya kokukhipha okuphezulu okucishe kube ngu-310 MW/cm²sr.

Ingqimba yokuthola i-disc ye-semiconductor ingama-micrometer ambalwa nje ubukhulu, futhi kwakheka i-microcavity ye-Fabry-Perot phakathi kwe-interface ye-semiconductor-air kanye ne-Bragg reflector engezansi esabalale. Ukuphatha i-microcavity ye-semiconductor njengesihlungi se-spectral esakhelwe ngaphakathi se-chip kuzolawula inzuzo yomthombo we-quantum. Okwamanje, umphumela wokuhlunga we-microcavity kanye nenzuzo ye-semiconductor kunezinga lokushintshashintsha lokushisa elihlukile. Kuhlanganiswe nokulawula izinga lokushisa, ukushintsha nokulawula ama-wavelength okukhiphayo kungafinyelelwa. Ngokusekelwe kulezi zici, ithimba libalile futhi labeka i-gain peak yomthombo we-quantum ku-950 nm ekushiseni okungu-300 K, kanti izinga lokushintshashintsha lokushisa lomthombo we-gain wavelength licishe libe ngu-0.37 nm/K. Ngemva kwalokho, ithimba laklama i-longitudinal constraint factor ye-chip lisebenzisa indlela ye-transmission matrix, enama-wavelength aphezulu angaba ngu-960 nm no-1000 nm ngokulandelana. Ukulingisa kwembule ukuthi izinga lokushintshashintsha lokushisa lalingu-0.08 nm/K kuphela. Ngokusebenzisa ubuchwepheshe bokufaka umhwamuko wamakhemikhali ensimbi-organic ekukhuleni kwe-epitaxial kanye nokwenza ngcono inqubo yokukhula ngokuqhubekayo, ama-gain chips asezingeni eliphezulu enziwe ngempumelelo. Imiphumela yokulinganisa ye-photoluminescence ihambisana ngokuphelele nemiphumela yokulingisa. Ukuze kuncishiswe umthwalo wokushisa futhi kufezwe ukudluliselwa kwamandla aphezulu, inqubo yokupakisha ama-chip e-semiconductor-diamond ithuthukiswe kabanzi.

Ngemva kokuqeda ukupakishwa kwe-chip, ithimba lenze ukuhlolwa okuphelele kokusebenza kwayo kwe-laser. Kwimodi yokusebenza eqhubekayo, ngokulawula amandla ephampu noma izinga lokushisa le-heat sink, ubude be-emission bungalungiswa ngokuguquguqukayo phakathi kuka-960 nm no-1000 nm. Uma amandla ephampu engaphakathi kobubanzi obuthile, i-laser ingaphinde ifinyelele ukusebenza kwe-wave-dual, ngesikhawu se-wavelength esifinyelela ku-39.4 nm. Ngalesi sikhathi, amandla aphezulu we-wave eqhubekayo afinyelela ku-3.8 W. Okwamanje, i-laser isebenza kwimodi eyisisekelo eduze komkhawulo we-diffraction, ene-beam quality factor M² engu-1.1 kuphela kanye nokukhanya okuphezulu okufika ku-310 MW/cm²sr. Ithimba liphinde lenza ucwaningo ngokusebenza kwe-wave eqhubekayo kwe-i-laser. Isignali yemvamisa yesamba ibonwe ngempumelelo ngokufaka ikristalu ye-optical engeyona i-LiB₃O₅ emgodini we-resonant, okuqinisekisa ukuvumelanisa kwamaza obubanzi obubili.

Ngale ndlela yokuklama i-chip ehlakaniphile, inhlanganisela yezinto eziphilayo yokuhlunga kwe-quantum well gain kanye nokuhlunga kwe-microcavity kufeziwe, kwabeka isisekelo sokuklama sokufezwa kwemithombo ye-laser enemibala emibili. Ngokuphathelene nezinkomba zokusebenza, le laser enemibala emibili eyodwa ifinyelela ukukhanya okuphezulu, ukuguquguquka okuphezulu kanye nokukhishwa okunembile kwe-coaxial beam. Ukukhanya kwayo kusezingeni eliphambili emhlabeni jikelele emkhakheni wamanje wama-laser e-semiconductor emibala emibili eyodwa. Ngokuphathelene nokusetshenziswa okusebenzayo, le mpumelelo kulindeleke ukuthi ithuthukise ngempumelelo ukunemba kokuthola kanye nekhono lokulwa nokuphazamiseka kwe-multi-color lidar ezindaweni eziyinkimbinkimbi ngokusebenzisa ukukhanya kwayo okuphezulu kanye nezici zemibala emibili. Emkhakheni wama-combs e-optical frequency, ukuphuma kwayo okuzinzile kwe-dual-wavelength kunganikeza ukwesekwa okubalulekile kwezinhlelo zokusebenza ezifana nokulinganisa okunembile kwe-spectral kanye nokuzwa kwe-optical okunesinqumo esiphezulu.