Ukwakheka kwe-Ingaas PhotoDetEctor

Isakhiwo seI-Ingaas PhotoDetor

Kusukela ngo-1980s, abacwaningi ekhaya nakwamanye amazwe bafundele ukwakheka kwezithombe ze-Indelaas, ezihlukaniswe izinhlobo ezintathu. Bangama-Ingaas Metal-Semiconductor-Metal PhotoDepector (MSM-PD), i-Ingaas Pin PhotoDetector (PIN-PD), kanye ne-Ingaas AVALANCHE PHOTODETECHECT (APD-PD). Kunokwehluka okukhulu kwinqubo yokuqamba kanye nezindleko ze-Ingaas PhotoDeteors ezinezakhiwo ezahlukahlukene, futhi kukhona nomehluko omkhulu ekusebenzeni kwensiza.

I-Ingaas Metal-Semiconductor-MetalI-PhotoDETETETETECETETET, kuboniswe kuMfanekiso (a), isakhiwo esikhethekile ngokususelwa ku-Schottky Junction. Ngo-1992, shi et al. I-EPAFEGRENT HIPTERG HITHERE-ORGECH VAPOR EPITAXY Ubuchwepheshe be-Epitaxy Technology (LP-MOVPE) Ukukhulisa Izendlalelo ze-Epitaxy kanye ne-Ingaas MSM PhotoDepector, enobumnyama obukhulu bama-1.3 μM Isigaba segesi esisetshenzisiwe se-molecular beam beam epitaxy (GSMBE) ukukhulisa i-Inalas-Indaas-inp Epitaxy ungqimba. Isendlalelo se-Inalas sikhombise izici eziphakeme zokuzwelana, futhi izimo zokukhula zalungiswe ngesilinganiso sokuphazamiseka kwe-X-RAY, ukuze ama-lattice mismatch phakathi kwe-Ingaas kanye nezendlalelo ze-Inalas ayengaphakathi kwe-1 × 10⁻³. Lokhu kuphumela ekusebenzeni kwensiza okulungiselelwe nge-Brack yamanje engezansi nge-0.75 Pa / μm² ku-10 v PhotoDector kuze kube yi-5 V. Kuzonke, kepha i-Metal Electrode izokwehlisa indawo ephansi yokuvalwa kwensiza, ngakho-ke impendulo iphansi kakhulu kunezinye izakhiwo.

I-Ingaas Pin PhotoDemector ifaka ungqimba oluphakathi phakathi kwesendlalelo sokuxhumana se-P-Type kanye ne-N-Type Conprimer Ngo-2007, a.poloczek et al. I-MBE esetshenzisiwe ukukhulisa isendlalelo se-buffer esiphansi sokuthuthukisa ubulukhuni sendawo futhi unqobe i-lattice mismatch phakathi kwe-SI ne-INP. I-Mocvd yayisetshenziselwa ukuhlanganisa isakhiwo se-Ingaas Pin engxenyeni ye-INP Substrate, kanye nokuphendula kwensiza bekungama-0.57A / W. Ngo-2011, i-Army Research Laborary (Alr) yasebenzisa iPIN PHOTODetectors ukutadisha i-lidar imager for navigation, isithiyo / Ukuhlonzwa okuyisisekelo kwe-microwave amplifier chip okuthuthukisiwe okuthuthukiswa kakhulu isilinganiselo se-Ingaas Pin PhotoDector. Ngalesi sisekelo, ngonyaka ka-2012, i-Alr isebenzise lesi sithombe se-lidar ngamarobhothi, ngehla lokutholwa elingaphezu kwama-50 m kanye nesinqumo se-256 × 128.

AmangaI-Avalanche PhotoDepectorUhlobo lwe-PhotoDetor olunenzuzo, ukwakheka kwalo okukhonjiswa kuMfanekiso (c). Umbhangqwana we-elektroni uthola amandla anele ngaphansi kwesenzo sensimu kagesi ngaphakathi kwesifunda esiphindwe kabili, ukuze ashayisane ne-athomu, akhiqize ngababili be-elektroni, bese uphinda umphumela we-avalanche, bese uphinda izithwali ezingezona zokulingana ezintweni ezibonakalayo. Ngo-2013, uGeorge M wasebenzisa i-MBE ukukhulisa i-lattice efanisiwe i-Ingaas kanye nama-alloys we-inp substrate, esebenzisa izinguquko ekwakhekeni kwe-alloy, ukuqina kwe-epitaxial Esikhathini esilinganayo sesiginali yokuthola inzuzo, i-APD ikhombisa umsindo ophansi kanye ne-Break Dark yamanje. Ngo-2016, ilanga jianfeng et al. Yakhe iqoqo le-1570 NM Laser esebenzayo yokuhlola ukucabanga kokucabanga ngokusekelwe kwi-Ingaas Avalanche PhotoDetector. Umjikelezo wangaphakathi weI-PhotoDector ye-APDKutholwe ama-echoes atholwe futhi akhipha ngqo amasiginali edijithali, okwenza lonke idivaysi ikhokhekile. Imiphumela yokuhlola ikhonjiswa ku-Fig. (d) no (e). Umdwebo (D) isithombe somzimba selitshe lemifanekiso, futhi isithombe (e) siyisithombe sebanga elinezici ezintathu. Kungabonakala ngokucacile ukuthi indawo yewindows yendawo C inebanga elithile elijulile elinendawo A no-B. Iplatifomu ibona ububanzi be-pulse ngaphansi kwama-10 ns, i-linelio pulse energy (1 ~ 3) MJ aguqukayo, ethola i-lens field angle ye-2 khw, imvamisa yokuphindaphinda ye-1 Khz, isilinganiso se-Detector Duty of 60%. Ngenxa ye-APD's yangaphakathi ye-PhotoCrent Get, impendulo esheshayo, usayizi ohlangene, ukuqina kanye nezindleko eziphansi, ama-photodeteeeeepe aphansi angaba yi-magritude ephezulu ngezinga lokutholwa kunama-photodeectors we-pin.

Sekukonke, ngokuthuthukiswa okusheshayo kobuchwepheshe bokulungiselela i-Ingaas ekhaya nakwamanye amazwe, singasebenzisa ngekhono i-MBE, iMocvd, i-LPE nobunye ubuchwepheshe ukulungiselela ungqimba olusezingeni eliphezulu lwe-IPAS epitaxial I-Ingaas PhotoDeEctors ibonisa ukuphendula okumnyama okuphansi nokuphezulu, inani eliphansi elimnyama liphansi kune-0.75 pa / μm², ukuphendula okuphezulu kufinyelela ku-0.57 a / w, futhi kunempendulo esheshayo (i-PS Order). Ukuthuthukiswa kwesikhathi esizayo kwe-Ingaas PhotoDeteectors kuzogxila kulezi zinto ezimbili ezilandelayo: (1) I-Ingaas Epitaxial ungqimba itshalwe ngokuqondile e-Si substrate. Njengamanje, iningi lamadivayisi ama-microelectronic emakethe asuselwe, kanye nentuthuko ehlanganisiwe ehlanganisiwe ye-Ingaas kanye ne-SI KUSUSA KAKHULU. Ukuxazulula izinkinga ezinjenge-lattice mismatch kanye nokwengeza okukhohlisayo kwe-thermal kubalulekile ekufundeni kwe-Ingaas / SI; . Ngokukhuphuka kwezakhi, i-lattice mismatch phakathi kwe-INP Substrate kanye ne-Ingaas Epitaxial ungqimba kuzoholela ekuchithweni okubi kakhulu nasekulimaleni, kudingekile ukwandisa amapharamitha enqubo yedivayisi, kunciphise amaphutha we-lattice, futhi unciphise idivaysi yamanje yamanje.