Isakhiwo se-InGaAs photodetector

Isakhiwo seIsithwebuli sezithombe se-InGaAs

Kusukela ngeminyaka yawo-1980, abacwaningi basekhaya nabaphesheya baye bafunda ukwakheka kwama-photodetectors e-InGaAs, ahlukaniswe kakhulu abe izinhlobo ezintathu. Ziyi-InGaAs metal-Semiconductor-metal photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), kanye ne-InGaAs Avalanche Photodetector (APD-PD). Kunomehluko omkhulu enqubweni yokwenziwa kanye nezindleko zama-InGaAs photodetectors anezakhiwo ezihlukene, futhi kukhona umehluko omkhulu ekusebenzeni kwedivayisi.

I-InGaAs yensimbi-semiconductor-metali-photodetector, eboniswe kuMfanekiso (a), isakhiwo esikhethekile esisekelwe ku-junction ye-Schottky. Ngo-1992, uShi et al. isebenzise ubuchwepheshe obuphansi be-metal-organic vapor phase epitaxy technology (LP-MOVPE) ukuze kukhule izendlalelo ze-epitaxy futhi kulungiswe isithwebuli sesithombe se-InGaAs MSM, esinokusabela okuphezulu okungu-0.42 A/W kubude begagasi obungu-1.3 μm kanye namandla amnyama angaphansi kuka-5.6 pA/ μm² ku-1.5 V. Ngo-1996, i-zhang et al. isebenzise i-gas phase molecular beam epitaxy (GSMBE) ukuze ikhulise isendlalelo se-epitaxy se-InAlAs-InGaAs-InP. Isendlalelo se-InAlAs sibonise izici eziphezulu zokungazweli, futhi izimo zokukhula zathuthukiswa ngesilinganiso sokushintshashintsha kwe-X-ray, ukuze ukungafani kwe-lattice phakathi kwezendlalelo ze-InGaAs ne-InAlAs kube ngaphakathi kwebanga elingu-1×10⁻³. Lokhu kuphumela ekusebenzeni okuthuthukisiwe kwedivayisi okunamanje okumnyama okungaphansi kuka-0.75 pA/μm² ku-10 V kanye nokuphendula kwesikhashana okusheshayo kufika ku-16 ps ku-5 V. Lilonke, isitholi sesithombe sesakhiwo se-MSM silula futhi kulula ukusihlanganisa, sibonisa ukukhanya okuphansi okumnyama (pA i-oda), kodwa i-electrode yensimbi izonciphisa indawo esebenzayo yokumunca ukukhanya kwedivayisi, ngakho impendulo iphansi kunezinye izakhiwo.

I-InGaAs PIN photodetector ifaka ungqimba lwangaphakathi phakathi kwesendlalelo sokuthintana sohlobo lwe-P kanye nongqimba lokuxhumana lohlobo lwe-N, njengoba kukhonjisiwe kuMfanekiso (b), okwandisa ububanzi besifunda sokuncipha, ngaleyo ndlela kukhiphe ukupheya kwama-electron-hole amaningi futhi kwakhe I-photocurrent enkulu, ngakho inokusebenza okuhle kakhulu kwe-electron conduction. Ngo-2007, u-A.Poloczek et al. isebenzise i-MBE ukuze ikhulise isendlalelo sebhafa yezinga lokushisa eliphansi ukuze kuthuthukiswe ubulukhuni obungaphezulu futhi kunqobe ukungafani kwe-lattice phakathi kwe-Si ne-InP. I-MOCVD yasetshenziselwa ukuhlanganisa ukwakheka kwe-PIN ye-InGaAs ku-substrate ye-InP, futhi ukuphendula kwedivayisi kwakucishe kube ngu-0.57A /W. Ngo-2011, i-Army Research Laboratory (ALR) yasebenzisa ama-PIN photodetectors ukuze itadishe isithombe se-liDAR sokuzulazula, izithiyo/ukugwema ukushayisana, kanye nokutholwa/ukuhlonza okuqondiwe kwebanga elifushane kwezimoto ezincane ezingenamuntu, ezihlanganiswe ne-chip ye-microwave amplifier ebiza kancane. ithuthukise kakhulu isilinganiso sesignali-kuya-noise se-InGaAs PIN photodetector. Ngalesi sisekelo, ngo-2012, i-ALR yasebenzisa lesi sithombe se-liDAR kumarobhothi, enebanga lokutholwa elingaphezu kwama-50 m kanye nokulungiswa okungu-256 × 128.

I-InGaAsi-avalanche photodetectoriwuhlobo lwe-photodetector enenzuzo, ukwakheka kwayo kuboniswe kuMfanekiso (c). Ipheya ye-electron-hole ithola amandla anele ngaphansi kwesenzo senkambu kagesi ngaphakathi kwendawo ephindwe kabili, ukuze ingqubuzane ne-athomu, ikhiqize amapheya amasha e-electron-hole, yakhe umphumela we-avalanche, futhi iphindaphinde abathwali abangalingani ezintweni ezibonakalayo. . Ngo-2013, u-George M wasebenzisa i-MBE ukuze akhulise i-lattice efaniswe ne-InGaAs kanye ne-InAlAs alloys ku-substrate ye-InP, esebenzisa izinguquko ekubunjweni kwe-alloy, ugqinsi lwe-epitaxial layer, kanye ne-doping kumandla wenkampani yenethiwekhi ukuze kukhuliswe i-ionization ye-electroshock kuyilapho kuncishiswa ukubonwa kwembobo. Ekuzuzeni okufanayo kwesignali yokuphumayo, i-APD ibonisa umsindo ophansi kanye nobumnyama obuphansi. Ngo-2016, u-Sun Jianfeng et al. yakhe isethi yeplathifomu yokuhlola ye-laser ye-laser engu-1570 nm esekelwe kusitholi sesithombe se-avalanche se-InGaAs. Umjikelezo wangaphakathi weI-APD photodetectorithole ama-echoes futhi ikhiphe amasignali edijithali ngokuqondile, okwenza yonke idivayisi ihlangane. Imiphumela yokuhlolwa iboniswa ku-FIG. (d) kanye (e). Umfanekiso (d) uyisithombe esibonakalayo sethagethi yokuthwebula, futhi Umfanekiso (e) uyisithombe sebanga lezinhlangothi ezintathu. Kungabonakala ngokucacile ukuthi indawo yewindi yendawo c inebanga elithile lokujula ngendawo A no-b. Iplatifomu ibona ububanzi be-pulse obungaphansi kwama-10 ns, amandla okuthinta okukodwa (1 ~ 3) mJ ashintshwayo, ithola i-lens field Angle engu-2 °, imvamisa yokuphindaphinda ye-1 kHz, isilinganiso somsebenzi womtshina esingaba ngu-60%. Ngenxa yenzuzo yangaphakathi yesithombe samanje ye-APD, ukusabela okusheshayo, usayizi ohlangene, ukuqina kanye nezindleko eziphansi, izitholi zezithombe ze-APD zingaba i-oda lobukhulu obuphakeme ngezinga lokutholwa kune-PIN photodetectors, ngakho-ke i-liDAR evamile yamanje ibuswa ama-avalanche photodetectors.

Sekukonke, ngokuthuthuka okusheshayo kobuchwepheshe bokulungiselela i-InGaAs ekhaya naphesheya, singasebenzisa ngekhono i-MBE, i-MOCVD, i-LPE nobunye ubuchwepheshe ukuze silungise ungqimba lwezinga eliphezulu lwe-InGaAs lwe-epitaxial ku-InP substrate. Ama-photodetectors e-InGaAs abonisa ukusabela okumnyama okuphansi nokuphezulu, amandla amnyama aphansi kakhulu angaphansi kuka-0.75 pA/μm², ukusabela okuphezulu kufika ku-0.57 A/W, futhi kunempendulo yesikhashana esheshayo (i-ps order). Ukuthuthukiswa kwesikhathi esizayo kwama-InGaAs photodetectors kuzogxila ezicini ezimbili ezilandelayo: (1) I-InGaAs epitaxial layer itshalwa ngokuqondile ku-Si substrate. Njengamanje, iningi lamadivayisi we-microelectronic emakethe asekelwe ku-Si, kanti ukuthuthukiswa okuhlanganisiwe okulandelayo kwe-InGaAs kanye ne-Si okusekelwe kuyindlela evamile. Ukuxazulula izinkinga ezifana nokungafani kwe-lattice kanye nomehluko we-coefficient yokwandisa ukushisa kubalulekile ocwaningweni lwe-InGaAs/Si; (2) Ubuchwepheshe be-wavelength obungu-1550 nm sebuvuthiwe, futhi ubude beza obunwetshiwe (2.0 ~ 2.5) μm buyindlela yocwaningo lwesikhathi esizayo. Ngokukhula kwe-In components, ukungafani kwe-lattice phakathi kwe-InP substrate kanye ne-InGaAs epitaxial layer kuzoholela ekugudlukeni okubi nakakhulu kanye namaphutha, ngakho-ke kuyadingeka ukuthuthukisa amapharamitha wenqubo yedivayisi, unciphise ukonakala kwe-lattice, futhi unciphise idivayisi yamanje emnyama.