I-photodetector ene-photon eyodwa idlule enkingeni yokusebenza kahle okungu-80%

Isitholi sesithombe esine-photon eyodwabadlule enkingeni yokusebenza kahle engu-80%

I-photon eyodwaumshini wokuthola izithombeZisetshenziswa kabanzi emikhakheni ye-quantum photonics kanye ne-single-photon imaging ngenxa yezinzuzo zazo ezincane nezingabizi kakhulu, kodwa zibhekene nezingqinamba zobuchwepheshe ezilandelayo.

Imikhawulo yobuchwepheshe yamanje

1. I-CMOS kanye ne-SPAD encane: Nakuba zinokuhlanganiswa okuphezulu kanye ne-timing jitter ephansi, ungqimba lokumuncwa luncane (ama-micrometer ambalwa), kanti i-PDE inqunyelwe esifundeni esiseduze kwe-infrared, cishe i-32% kuphela ku-850 nm.

2. I-Thick-junction SPAD: Inesendlalelo sokumunca esinobukhulu obungamashumi ama-micrometer. Imikhiqizo yezentengiselwano ine-PDE engaba ngu-70% ku-780 nm, kodwa ukudlula ku-80% kuyinselele enkulu.

3. Funda imikhawulo yesekethe: I-SPAD ehlangene ngokujiyile idinga i-voltage eqile kakhulu engaphezu kwama-30V ukuqinisekisa amathuba aphezulu okuqhekeka kweqhwa. Ngisho noma i-voltage yokucima engu-68V kumasekethe avamile, i-PDE ingakhushulwa ibe ngu-75.1% kuphela.

Isixazululo

Lungiselela isakhiwo se-semiconductor se-SPAD. Umklamo okhanyiselwe emuva: Ama-photon esigameko abola kakhulu ku-silicon. Isakhiwo esikhanyiselwe emuva siqinisekisa ukuthi iningi lama-photon limuncwa ungqimba lokumuncwa, futhi ama-electron akhiqizwayo afakwa esifundeni se-avalanche. Ngenxa yokuthi izinga lokufakwa kwama-electron ku-silicon liphakeme kunelemigodi, ukujova kwama-electron kunikeza amathuba aphezulu e-avalanche. Isifunda se-avalanche sokubuyisela i-doping: Ngokusebenzisa inqubo eqhubekayo yokusabalalisa ye-boron ne-phosphorus, i-doping engajulile iyakhokhelwa ukuze kugxilwe insimu kagesi esifundeni esijulile ngamaphutha ambalwa ekristalu, kunciphisa ngempumelelo umsindo njenge-DCR.

2. Isekethe yokufunda esebenza kahle kakhulu. Ukucima kwe-amplitude ephezulu engu-50V Ukushintsha kwesimo esisheshayo; Ukusebenza kwe-Multimodal: Ngokuhlanganisa amasignali e-CENCHING kanye ne-RESET control ye-FPGA, ukushintsha okuguquguqukayo phakathi kokusebenza okukhululekile (isiqalisi sesiginali), i-gating (idrayivu ye-GATE yangaphandle), kanye nezindlela ze-hybrid kuyatholakala.

3. Ukulungiswa kanye nokupakishwa kwedivayisi. Inqubo ye-SPAD wafer iyasetshenziswa, ngephakheji yebhabhathane. I-SPAD iboshelwe ku-substrate ye-AlN carrier bese ifakwa ngokuqondile ku-thermoelectric cooler (TEC), futhi ukulawulwa kokushisa kufezwa nge-thermistor. Imicu ye-optical ye-Multimode ihambisana kahle nesikhungo se-SPAD ukuze kufezwe ukuhlanganiswa okuphumelelayo.

4. Ukulinganiswa kokusebenza. Ukulinganiswa kwenziwa kusetshenziswa i-785 nm picosecond pulsed laser diode (100 kHz) kanye nesiguquli sedijithali sesikhathi (TDC, 10 ps resolution).

Isifinyezo

Ngokwenza ngcono isakhiwo se-SPAD (ukuhlangana okujiyile, ukukhanya okungemuva, isinxephezelo sokusebenzisa izidakamizwa) kanye nokuqamba isekethe yokucima engu-50 V, lolu cwaningo luphumelele ukusunduza i-PDE yesitholi se-single-photon esisekelwe ku-silicon saya ekuphakameni okusha okungu-84.4%. Uma kuqhathaniswa nemikhiqizo yezentengiselwano, ukusebenza kwayo okuphelele kuthuthukiswe kakhulu, kuhlinzeka ngezixazululo ezisebenzayo zezinhlelo zokusebenza ezifana nokuxhumana kwe-quantum, ukubalwa kwe-quantum, kanye nokuthwebula izithombe okuzwela kakhulu okudinga ukusebenza kahle kakhulu kanye nokusebenza okuguquguqukayo. Lo msebenzi ubeke isisekelo esiqinile sokuthuthukiswa okuqhubekayo kwe-silicon-based.isitholi se-photon esisodwaubuchwepheshe.