Isitholi sesithombe se-photon eyodwa sephule ibhodlela le-80% lokusebenza kahle

Isithwebuli sesithombe sesithombe esisodwabaphule ibhodlela le-80% lokusebenza kahle

I-Single-photoni-photodetectorzisetshenziswa kabanzi emkhakheni we-quantum photonics kanye ne-single-photon imaging ngenxa yezinzuzo zabo ezihlangene futhi ezingabizi kakhulu, kodwa zibhekene nalezi zinkinga ezilandelayo zobuchwepheshe.

Imikhawulo yezobuchwepheshe yamanje

I-1.CMOS kanye ne-SPAD ye-light-junction: Nakuba inokudidiyelwa okuphezulu kanye ne-jitter yesikhathi esiphansi, isendlalelo sokumuncwa sizacile (ama-micrometer ambalwa), futhi i-PDE ikhawulelwe endaweni eseduze ne-infrared, cishe ngama-32% kuphela ku-850 nm.

2. I-SPAD ye-Thick-junction: Ifaka isendlalelo sokumuncwa esingamashumi ama-micrometers awugqinsi. Imikhiqizo yezentengiselwano ine-PDE ecishe ibe ngu-70% ku-780 nm, kodwa ukweqa ama-80% kuyinselele enkulu.

3. Funda imikhawulo yesekethe: I-SPAD ye-Thick-junction idinga i-overbias voltage engaphezu kuka-30V ukuze kuqinisekiswe amathuba aphezulu e-avalanche. Ngisho ne-voltage yokucisha engu-68V kumasekethe endabuko, i-PDE inganyuswa kuphela ibe ngu-75.1%.

Isixazululo

Lungiselela ukwakheka kwesemiconductor ye-SPAD. Idizayini ekhanyiswe ngemuva: Isigameko samaphothoni abola kakhulu ku-silicon. Isakhiwo esikhanyisiwe ngemuva siqinisekisa ukuthi iningi lama-photon limuncwa kungqimba lokumuncwa, futhi ama-electron akhiqiziwe ajovwa endaweni ye-avalanche. Ngenxa yokuthi izinga le-ionization lama-electron aku-silicon liphakeme kunalelo lezimbobo, umjovo we-electron unikeza amathuba aphezulu e-avalanche. Isifunda se-avalanche sesinxephezelo se-Doping: Ngokusebenzisa inqubo yokusabalalisa eqhubekayo ye-boron ne-phosphorus, i-doping engajulile inxeshezelwa ukuze kugxiliswe inkambu kagesi endaweni ejulile enokulimala kwekristalu okumbalwa, kwehlisa ngempumelelo umsindo ofana ne-DCR.

2. Isifunda sokufunda esisebenza kahle. I-50V ye-amplitude ephezulu ivala Ukushintsha kwesimo esisheshayo; Ukusebenza kwe-Multimodal: Ngokuhlanganisa i-FPGA yokulawula i-QUENCHING kanye ne-RESET amasignali, ukushintsha okuguquguqukayo phakathi kokusebenza kwamahhala (isiqalisi sesignali), i-gating (idrayivu ye-GATE yangaphandle), kanye nezindlela ezixubile ziyafinyelelwa.

3. Ukulungiswa kwedivayisi nokupakishwa. Inqubo ye-wafer ye-SPAD iyamukelwa, ngephakheji uvemvane. I-SPAD iboshelwe ku-substrate yenkampani yenethiwekhi ye-AlN futhi ifakwe ngokuqondile kumshini opholile we-thermoelectric (TEC), futhi ukulawulwa kwezinga lokushisa kufinyelelwa nge-thermistor. I-Multimode optical fibers iqondaniswe ngokunembile nesikhungo se-SPAD ukuze kuzuzwe ukuhlangana okuphumelelayo.

4. Ukulinganisa ukusebenza. Ukulinganisa kwenziwa kusetshenziswa i-785 nm picosecond pulsed laser diode (100 kHz) kanye ne-time-digital converter (TDC, 10 ps resolution).

Isifinyezo

Ngokulungiselela ukwakheka kwe-SPAD (indawo ehlangene ewugqinsi, ekhanyiselwe emuva, isinxephezelo se-doping) kanye nokusungula isekethe yokucisha i-50 V, lolu cwaningo luphushe ngempumelelo i-PDE yomtshina we-silicon-based single-photon ukuphakama okusha okungu-84.4%. Uma kuqhathaniswa nemikhiqizo yezentengiselwano, ukusebenza kwayo okuphelele kuye kwathuthukiswa kakhulu, okuhlinzeka ngezixazululo ezingokoqobo zezinhlelo zokusebenza ezifana nokuxhumana kwe-quantum, i-quantum computing, ne-high-sensitivity imaging edinga ukusebenza kahle okuphezulu kanye nokusebenza okuguquguqukayo. Lo msebenzi ubeke isisekelo esiqinile sokuthuthukiswa okuqhubekayo kwe-silicon-basedumtshina wesithombe esisodwaubuchwepheshe.