Isakhi esisebenzayo se-silicon photonics

Isakhi esisebenzayo se-silicon photonics

Izingxenye ezisebenzayo ze-photonics zibhekisela ngqo ekusebenzisaneni okuguquguqukayo okuklanywe ngamabomu phakathi kokukhanya nezinto. Ingxenye evamile esebenzayo ye-photonics iyi-optical modulator. Zonke izinto zamanje ezisekelwe ku-siliconama-modulators opticalzisekelwe kumphumela we-plasma free carrier. Ukushintsha inani lama-electron amahhala kanye nezimbobo ezintweni ze-silicon ngokusebenzisa i-doping, izindlela zikagesi noma ze-optical kungashintsha i-complex refractive index yayo, inqubo eboniswe kuzibalo (1,2) etholwe ngokufaka idatha evela ku-Soref no-Bennett ku-wavelength yama-nanometer angu-1550. Uma kuqhathaniswa nama-electron, izimbobo zibangela ingxenye enkulu yezinguquko zangempela nezicatshangelwayo ze-refractive index, okungukuthi, zingakhiqiza ushintsho olukhulu lwesigaba soshintsho lokulahlekelwa olunikeziwe, ngakho-ke kuAma-modulators e-Mach-Zehnderkanye nama-ring modulator, ngokuvamile kukhethwa ukusebenzisa izimbobo ukwenzaama-modulators esigaba.

Okuhlukahlukenei-modulator ye-silicon (Si)Izinhlobo ziboniswe kuMfanekiso 10A. Ku-modulator yomjovo wokuthwala, ukukhanya kutholakala ku-silicon yangaphakathi ngaphakathi kwe-pin junction ebanzi kakhulu, futhi ama-electron nezimbobo ziyajovwa. Kodwa-ke, ama-modulator anjalo ahamba kancane, ngokuvamile ane-bandwidth engu-500 MHz, ngoba ama-electron nezimbobo zamahhala zithatha isikhathi eside ukuhlangana kabusha ngemva kokujova. Ngakho-ke, lesi sakhiwo sivame ukusetshenziswa njenge-variable optical attenuator (VOA) kunokuba yi-modulator. Ku-modulator yokunciphisa i-carrier, ingxenye yokukhanya itholakala ku-pn junction encane, futhi ububanzi bokunciphisa kwe-pn junction bushintshwa yinsimu kagesi esetshenzisiwe. Le modulator ingasebenza ngesivinini esingaphezu kuka-50Gb/s, kodwa inokulahlekelwa okuphezulu kokufakwa ngemuva. I-vpil ejwayelekile ingu-2 V-cm. I-modulator ye-metal oxide semiconductor (MOS) (empeleni i-semiconductor-oxide-semiconductor) iqukethe ungqimba lwe-oxide oluncane ku-pn junction. Ivumela ukuqongelelana kwenkampani yokuthwala kanye nokuncipha kwenkampani yokuthwala, okuvumela i-VπL encane engaba ngu-0.2 V-cm, kodwa inobuthakathaka bokulahlekelwa okuphezulu kokukhanya kanye nomthamo ophezulu ngobude beyunithi ngayinye. Ngaphezu kwalokho, kunezimodulators zokumunca kagesi ze-SiGe ezisekelwe ekuhambeni komphetho webhendi ye-SiGe (silicon Germanium alloy). Ngaphezu kwalokho, kunezimodulators ze-graphene ezithembele ku-graphene ukushintsha phakathi kwezinsimbi ezimuncayo kanye nezimodulators ezisobala. Lokhu kubonisa ukuhlukahluka kokusetshenziswa kwezindlela ezahlukene zokufeza ukuguqulwa kwesignali ye-optical ngesivinini esikhulu, nokulahlekelwa okuphansi.

Umfanekiso 10: (A) Umdwebo wesigaba esiphambene wemiklamo ehlukahlukene ye-optical modulator esekelwe ku-silicon kanye (B) umdwebo wesigaba esiphambene wemiklamo ye-optical detector.

Kuboniswe izitholi zokukhanya eziningana ezisekelwe ku-silicon kuMfanekiso 10B. Izinto ezimuncayo yi-germanium (Ge). I-Ge iyakwazi ukumunca ukukhanya ngamaza afinyelela kuma-microns angaba ngu-1.6. Okuboniswe ngakwesobunxele yisakhiwo sephini esiphumelele kakhulu kwezentengiselwano namuhla. Sakhiwe yi-silicon efakwe uhlobo lwe-P lapho i-Ge ikhula khona. I-Ge ne-Si zinokungahambelani kwe-lattice okungu-4%, futhi ukuze kuncishiswe ukuhlukana, ungqimba oluncane lwe-SiGe luqale lukhule njengengqimba ye-buffer. Ukumunca kohlobo lwe-N kwenziwa phezulu kwengqimba ye-Ge. I-photodiode yensimbi-semiconductor-metal (MSM) iboniswa phakathi, kanye ne-APD (i-avalanche photodetector) iboniswe ngakwesokudla. Isifunda se-avalanche ku-APD sitholakala e-Si, esinezici zomsindo ophansi uma kuqhathaniswa nesifunda se-avalanche ezintweni eziyisisekelo zeQembu III-V.

Okwamanje, azikho izixazululo ezinezinzuzo ezisobala ekuhlanganiseni i-optical gain ne-silicon photonics. Isithombe 11 sibonisa izinketho eziningana ezingahlelwa ngokwezinga le-assembly. Ngakwesobunxele kakhulu kukhona ukuhlanganiswa kwe-monolithic okuhlanganisa ukusetshenziswa kwe-germanium (Ge) ekhule nge-epitaxially njengento yokuthola i-optical gain, ama-waveguides engilazi e-erbium-doped (Er) (njenge-Al2O3, edinga i-optical pumping), kanye nama-quantum dots e-gallium arsenide (GaAs) ekhule nge-epitaxially. Ikholomu elandelayo i-wafer to wafer assembly, ehilela ukubopha kwe-oxide kanye ne-organic esifundeni se-III-V group gain. Ikholomu elandelayo i-chip-to-wafer assembly, ehilela ukufaka i-chip yeqembu le-III-V emgodini we-silicon wafer bese ulungisa isakhiwo se-waveguide. Inzuzo yale ndlela yokuqala yamakholomu amathathu ukuthi idivayisi ingahlolwa ngokugcwele ngaphakathi kwe-wafer ngaphambi kokusika. Ikholomu engakwesokudla kakhulu i-chip-to-chip assembly, okuhlanganisa ukuhlanganiswa okuqondile kwama-silicon chips kuma-III-V group chips, kanye nokuhlanganiswa ngamalensi nama-grating couplers. Ukuthambekela kwezinhlelo zokusebenza zezentengiselwano kushintshela ohlangothini lwesokudla lweshadi kuya ezixazululweni ezihlanganisiwe nezihlanganisiwe kakhudlwana.

Umfanekiso 11: Indlela i-optical gain ehlanganiswa ngayo kuma-photonics asekelwe ku-silicon. Njengoba uhamba usuka kwesobunxele uye kwesokudla, iphuzu lokufaka lokukhiqiza libuyela kancane kancane enkambisweni.