Isici esisebenzayo se-silicon photonics

Isici esisebenzayo se-silicon photonics

Izingxenye ezisebenzayo ze-Photonics zibhekise ngqo ekusebenzelaneni okunamandla okuklanywe ngamabomu phakathi kokukhanya nodaba. Ingxenye evamile esebenzayo yama-photonics imoduli yokubona. Zonke zamanje-based-siliconama-modulators opticalzisekelwe kumphumela we-plasma yenethiwekhi yamahhala. Ukushintsha inani lama-electron amahhala nezimbobo kuzinto ze-silicon ngokwenza i-doping, izindlela zikagesi noma ze-optical zingashintsha inkomba yayo eyinkimbinkimbi ye-refractive, inqubo eboniswa ezilinganisweni (1,2) etholwe ngokufaka idatha evela ku-Soref no-Bennett kubude begagasi obungama-nanometer angu-1550. . Uma kuqhathaniswa nama-electron, izimbobo zibangela ingxenye enkulu yezinguquko zenkomba zangempela nezicatshangelwayo, okungukuthi, zingakhiqiza ushintsho olukhulu lwesigaba soshintsho olunikeziwe lokulahlekelwa, ngakho-keI-Mach-Zehnder modulatorskanye nama-modulators ring, kuvame ukukhetha ukusebenzisa izimbobo ukwenzaama-modulators wesigaba.

Okuhlukahlukenei-silicon (Si) moduleizinhlobo ziboniswa kuMfanekiso 10A. Kumoduli yomjovo yenkampani yenethiwekhi, ukukhanya kutholakala ku-silicon yangaphakathi ngaphakathi kwendawo yokuhlangana yephinikhodi ebanzi kakhulu, futhi ama-electron nezimbobo ziyajovwa. Kodwa-ke, amamojula anjalo ahamba kancane, ngokuvamile ane-bandwidth engu-500 MHz, ngoba ama-electron amahhala nezimbobo kuthatha isikhathi eside ukuhlangana kabusha ngemva komjovo. Ngakho-ke, lesi sakhiwo sivame ukusetshenziswa njenge-variable optical attenuator (VOA) kune-modulator. Kumoduli yokuncishiswa kwenkampani yenethiwekhi, ingxenye yokukhanya itholakala ku-pn junction emincane, futhi ububanzi bokunciphisa be-pn junction bushintshwa inkambu kagesi esetshenzisiwe. Le modulator ingasebenza ngesivinini esingaphezu kuka-50Gb/s, kodwa inokulahlekelwa kokufakwa okungemuva okuphezulu. I-vpil ejwayelekile yi-2 V-cm. Imoduli ye-metal oxide semiconductor (MOS) (empeleni i-semiconductor-oxide-semiconductor) iqukethe ungqimba oluncane lwe-oxide ku-pn junction. Ivumela ukunqwabelana okuthile kwenkampani yenethiwekhi kanye nokuncipha kwenkampani yenethiwekhi, ivumela i-VπL encane engaba ngu-0.2 V-cm, kodwa inobubi bokulahlekelwa okuphezulu kokubona namandla aphezulu ngobude beyunithi ngayinye. Ngaphezu kwalokho, kukhona amamojula kagesi we-SiGe asuselwa ku-SiGe (i-silicon Germanium alloy) ukunyakaza konqenqema. Ngaphezu kwalokho, kukhona ama-graphene modulators athembele ku-graphene ukuze ashintshe phakathi kwezinsimbi ezimuncayo nama-insulators asobala. Lokhu kubonisa ukuhlukahluka kokusetshenziswa kwezinqubo ezahlukene ukuze kuzuzwe ukushintshwa kwesignali ye-optical enesivinini esikhulu, elahlekelwa kancane.

Umfanekiso we-10: (A) Umdwebo we-cross-sectional wemiklamo ehlukahlukene ye-silicon-based optical modulator kanye (B) ne-cross-sectional diagram yemiklamo ye-optical detector.

Izitholi zokukhanya eziningana ezisekelwe ku-silicon zikhonjisiwe kuMfanekiso 10B. Izinto ezimuncayo yi-germanium (Ge). I-Ge iyakwazi ukumunca ukukhanya kumaza wamaza kuze kube cishe ama-microns angu-1.6. Kuboniswa kwesokunxele iphinikhodi ephumelela kakhulu kwezohwebo namuhla. Yakhiwe nge-silicon ene-doped yohlobo lwe-P lapho i-Ge ikhula khona. I-Ge ne-Si inokungafani kwe-lattice okungu-4%, futhi ukuze kuncishiswe ukugudluka, ungqimba oluncane lwe-SiGe lukhuliswa kuqala njengongqimba lwebhafa. I-N-type doping yenziwa phezulu kwesendlalelo se-Ge. I-photodiode yensimbi-semiconductor-metal (MSM) ikhonjiswa phakathi, kanye ne-APD (I-avalanche Photodetector) kukhonjiswa kwesokudla. Isifunda se-avalanche ku-APD sitholakala e-Si, esinezici eziphansi zomsindo uma kuqhathaniswa nesifunda se-avalanche kuzinto eziyisisekelo zeQembu III-V.

Njengamanje, azikho izixazululo ezinezinzuzo ezisobala ekuhlanganiseni inzuzo yokubona nge-silicon photonics. Umfanekiso we-11 ubonisa izinketho ezimbalwa ezingahle zihlelwe ngezinga lomhlangano. Kwesokunxele kude kukhona ukuhlanganiswa kwe-monolithic okuhlanganisa ukusetshenziswa kwe-germanium (Ge) ekhule nge-epitaxially njengezinto ezibonakalayo zokuzuza, ama-waveguides engilazi e-erbium-doped (Er) (afana ne-Al2O3, edinga ukupompa optical), kanye ne-gallium arsenide (GaAs) etshalwe epitaxially. ) amachashazi e-quantum. Ikholomu elandelayo i-wafer to wafer assembly, ehlanganisa i-oxide ne-organic bonding endaweni yenzuzo yeqembu le-III-V. Ikholomu elandelayo inhlanganisela ye-chip-to-wafer, ehlanganisa ukushumeka i-chip yeqembu le-III-V endaweni ye-silicon wafer bese kwenziwa umshini isakhiwo se-waveguide. Inzuzo yale ndlela yokuqala yamakholomu amathathu ukuthi idivayisi ingahlolwa ngokugcwele ngaphakathi kwe-wafer ngaphambi kokusika. Ikholomu ekwesokudla kakhulu iwukuhlanganiswa kwe-chip-to-chip, okuhlanganisa ukuhlanganisa okuqondile kwama-silicon chips nama-chips eqembu le-III-V, kanye nokuhlangana kusetshenziswa ilensi nama-coupers agritha. Ukuthambekela kwezinhlelo zokusebenza zezentengiso kusuka kwesokudla kuya kwesokunxele seshadi kuya ezixazululweni ezihlanganisiwe nezihlanganisiwe.

Umfanekiso we-11: Inzuzo ye-optical ihlanganiswa kanjani ne-silicon-based photonics. Njengoba usuka kwesokunxele uye kwesokudla, indawo yokukhiqiza ihlehla kancane kancane enqubweni.