I-Silicon Photonics esebenzayo into

I-Silicon Photonics esebenzayo into

Izici ezisebenzayo ze-Photonics zibhekisa ngqo ukuxhumanisa okunamandla phakathi kokukhanya nodaba. Ingxenye ejwayelekile esebenzayo ye-Photonics iyisilungiselelo se-Optical Modulator. Konke kususelwa ku-siliconAmamodeli we-Optical Modulatorskususelwa kumphumela we-plasma free carrier. Ukushintsha inani lama-elektroni amahhala kanye nezimbobo ezibonakalayo ze-silicon ngokudla, izindlela zikagesi noma ezibonakalayo zingashintsha ama-Imperols alo eziyinkimbinkimbi, inqubo eboniswe kwi-equations (1,2) etholwe ngedatha efanelekile kusuka ku-soref kanye ne-bennett endaweni yama-nanometers ayi-1550. Qhathanisa nama-elektroni, izimbobo zibangela ingxenye enkulu yoshintsho lwenkomba yangempela necabanga, okungukuthi, bangakhiqiza ushintsho olukhulu lwesigaba ukuze uguqulwe ngokulahlekelwa, ngakho-keAma-modulators weMach-Zehnderkanye nama-modulators endandatho, kuvame ukukhethwa ukusebenzisa izimbobo ukwenzaAma-Modulators wesigaba.

OkuhlukahlukeneI-Silicon (SI) ModulatorIzinhlobo zikhonjiswa kuMfanekiso 10A. Ku-Carrier Chactise Modulator, ukukhanya kutholakala ku-silicon eyimfihlo ngaphakathi kwe-PIN Junction ebanzi kakhulu, kanye nama-elekthronithi kanye nezimbobo ziyajova. Kodwa-ke, ama-modulators anjalo ahamba kancane, ngokujwayelekile nge-bandwidth ka-500 mhz, ngoba ama-elektroni wamahhala kanye nezimbobo zithatha isikhathi eside ukubuyisa emuva ngemuva komjovo. Ngakho-ke, lesi sakhiwo sivame ukusetshenziswa njenge-attenuator ye-Optical Optical (VOA) kunokuba modulator. Ku-Carrier Decletion Modulator, ingxenye ekhanyayo itholakala emhlanganweni omncane we-PN, kanye nobubanzi bokuncipha kwe-PN Junction kushintshwa yinsimu kagesi esetshenzisiwe. Le modulator ingasebenza ngejubane elingaphezu kwe-50GB / S, kepha inokulahleka okuphezulu kwangemuva kokufaka. I-vpil ejwayelekile i-2 v-cm. I-semiconductor yensimbi ye-metal Ivumela ukunqwabelana kwenkampani yenethiwekhi kanye nokuncipha kwesithwali, okuvumela i-VCL encane ye-0.2 V-CM, kepha inokungabi nabika kokulahlekelwa okuphezulu okuphezulu kanye nokukhonkotha okuphezulu ubude be-unit. Ngaphezu kwalokho, kukhona ama-Shige Electrical Absorption Modators asuselwa ku-Sige (Silicon Germamonium Alloy) Band Edge Inhlangano. Ngaphezu kwalokho, kukhona ama-graphine modulators ancike ku-graphene ukuze ashintshe phakathi kwezinsimbi zokuthola ama-insurbing kanye nabalazi ababonakalayo. Lokhu kukhombisa ukwehlukahluka kwezicelo zezindlela ezahlukahlukene ukufezekisa ijubane eliphezulu, ukuguquguquka kwesiginali okuphansi okuphansi.

Umdwebo we-10: (a) Umdwebo wesigaba sesigaba semiklamo ebonakalayo ye-silicon esekelwe ku-silicon kanye (b) nomdwebo wesigaba sesigaba semiklamo ye-optical detector.

Imishini yokukhanya esekelwe ku-silicon esekelwe kwisibalo 10b. Izinto ezitholakalayo zingama-germanium (GE). I-GE iyakwazi ukudonsa ukukhanya kuma-wavelength ezansi cishe kumagciwane ayi-1,6. Kuboniswe ngakwesokunxele yisakhiwo se-PIN ephumelela kakhulu kunazo zonke namuhla. Ihlanganiswe ngohlobo lwe-P-Type GEDICON lapho i-GE GROWS. I-GE ne-SI ine-4% lattice mismatch, futhi ukuze inciphise ukuhanjiswa, ungqimba oluncane lwe-SIGE lutshalwe kuqala njengesendlalelo se-buffer. I-N-Type Doping yenziwa ngaphezulu kwesendlalelo se-GE. I-PhotoDide yensimbi-semictorr-Metal (MSM) Photodiode ikhonjiswa maphakathi, ne-APD (I-Avalanche PhotoDepector) kukhonjiswa ngakwesokudla. Isifunda se-avalanche e-APD sitholakala ku-SI, esinezimpawu eziphansi zomsindo uma ziqhathaniswa nesifunda se-avalanche ezintweni zeqembu III-V element.

Njengamanje, azikho izixazululo ngezinzuzo ezisobala ekuhlanganiseni inzuzo ye-Optical ne-Silicon Photonics. Umdwebo we-11 ukhombisa izinketho eziningana ezihlelwe yizinga lomhlangano. Ngakwesobunxele okuxakekile ukuhlanganiswa kwe-monolithic okubandakanya ukusetshenziswa kwe-epitalium esekhulile ekhulile (GE) njengezinto zokuthola ingilazi (i-al2oved (er) amachashazi (adinga amachashazi ama-gllium arsenide (gaas). Ikholomu elandelayo ichithekile emhlanganweni, okubandakanya i-oxide kanye nokubopha okuphathelene ne-organic kwi-III-V Group Group Region. Ikholamu elilandelayo lingumhlangano we-Chip-to-wafer, okubandakanya ukushumeka i-chip yeqembu le-III-V ungene emgodini we-silicon wafer bese uyimashini yesakhiwo se-waveGuide. Inzuzo yale ndlela yokuqala yekholomu yokuqala ukuthi idivaysi ingasebenza ngokugcwele ngaphakathi kwe-wafer ngaphambi kokusika. Ikholamu eliphakeme kakhulu lingumhlangano we-Chip-to-chip, kufaka phakathi ukuhlangana okuqondile kwama-silicon chips kuya ama-chips we-III-v ama-chips weqembu, kanye nokuhlangana ngama-lens kanye nama-coupler we-lens. Lo mkhuba obhekise ekusetshenzisweni kwezentengiso usuka kwesokudla uye ohlangothini lwesobunxele lweshadi elibheke izixazululo ezihlanganisiwe nezihlanganisiwe.

Umdwebo 11: Indlela inzuzo yokubona ihlanganiswa kanjani ohlwini lwe-silicon olususelwa ku-silicon. Njengoba usuka kwesobunxele uye kwesokudla, indawo yokufaka yokukhiqiza iya emuva kwenqubo.