Kwama-optoelectronics asekelwe ku-silicon, ama-silicon photodetector (i-Si photodetector)

Kwama-optoelectronics asekelwe ku-silicon, ama-silicon photodetector

Ama-Photodetectorsguqula izimpawu zokukhanya zibe izimpawu zikagesi, futhi njengoba amazinga okudluliswa kwedatha eqhubeka nokuthuthuka, ama-photodetector asheshayo ahlanganiswe namapulatifomu e-optoelectronics asekelwe ku-silicon aseyisihluthulelo sezikhungo zedatha zesizukulwane esilandelayo kanye namanethiwekhi okuxhumana. Lesi sihloko sizohlinzeka ngokubuka konke kwama-photodetector asheshayo athuthukile, kugxilwe kakhulu ku-germanium esekelwe ku-silicon (i-Ge noma i-Si photodetector)ama-photodetector e-siliconkobuchwepheshe be-optoelectronics obuhlanganisiwe.

I-Germanium iyinto ekhangayo yokuthola ukukhanya okuseduze kwe-infrared kumapulatifomu e-silicon ngoba iyahambisana nezinqubo ze-CMOS futhi inokumuncwa okunamandla kakhulu kuma-wavelength okuxhumana ngocingo. Isakhiwo se-photodetector esivame kakhulu se-Ge/Si yi-pin diode, lapho i-germanium yangaphakathi ibekwe phakathi kwezifunda zohlobo lwe-P kanye nohlobo lwe-N.

Isakhiwo sedivayisi Isithombe 1 sibonisa iphini evamile eqondile i-Ge nomaIsitholi sezithombeisakhiwo:

Izici eziyinhloko zifaka: ungqimba olumunca i-germanium olukhulele ku-silicon substrate; Kusetshenziselwa ukuqoqa othintana ne-p kanye ne-n yabathwali be-charge; Ukuhlanganiswa kwe-Waveguide ukuze kufakwe ukukhanya okuphumelelayo.

Ukukhula kwe-Epitaxial: Ukukhulisa i-germanium esezingeni eliphezulu ku-silicon kuyinselele ngenxa yokungalingani kwe-lattice okungu-4.2% phakathi kwezinto ezimbili. Inqubo yokukhula enezinyathelo ezimbili ivame ukusetshenziswa: ukukhula kwezinga le-buffer lokushisa eliphansi (300-400°C) kanye nokufakwa kwe-germanium emazingeni okushisa aphezulu (ngaphezu kuka-600°C). Le ndlela isiza ukulawula ukuhlukana kwe-threading okubangelwa ukungafani kwe-lattice. Ukufakwa kwe-annealing ngemuva kokukhula ku-800-900°C kunciphisa kakhulu ubuningi be-threading dislocation bube cishe ngu-10^7 cm^-2. Izici zokusebenza: I-Ge/Si PIN photodetector ethuthuke kakhulu ingafinyelela: ukuphendula, > 0.8A /W ku-1550 nm; I-Bandwidth,>60 GHz; Ugesi omnyama, <1 μA ku--1 V bias.

Ukuhlanganiswa namapulatifomu e-optoelectronics asekelwe ku-silicon

Ukuhlanganiswa kweama-photodetector asheshayoAmapulatifomu e-optoelectronics asekelwe ku-silicon avumela ama-transceiver athuthukisiwe kanye nama-connection. Izindlela ezimbili eziyinhloko zokuhlanganisa yilezi ezilandelayo: Ukuhlanganiswa kwe-front-end (FEOL), lapho i-photodetector kanye ne-transistor kukhiqizwa khona ngesikhathi esisodwa ku-substrate ye-silicon okuvumela ukucutshungulwa kokushisa okuphezulu, kodwa kuthathe indawo ye-chip. Ukuhlanganiswa kwe-Back-end (BEOL). Ama-photodetector akhiqizwa phezu kwensimbi ukuze kugwenywe ukuphazamiseka kwe-CMOS, kodwa anqunyelwe ekushiseni okuphansi kokucubungula.

Umfanekiso 2: Ukusabela kanye nobubanzi be-bandwidth ye-photodetector ye-Ge/Si eshesha kakhulu

Isicelo sesikhungo sedatha

Ama-photodetector ashesha kakhulu ayisici esibalulekile esizukulwaneni esilandelayo sokuxhumana kwesikhungo sedatha. Izinhlelo zokusebenza eziyinhloko zifaka: ama-transceivers optical: 100G, 400G kanye namazinga aphezulu, kusetshenziswa i-PAM-4 modulation; Aisitholi sesithombe se-bandwidth ephezulu(>50 GHz) iyadingeka.

Isekethe ehlanganisiwe ye-optoelectronic esekelwe ku-silicon: ukuhlanganiswa kwe-monolithic kwe-detector ne-modulator nezinye izingxenye; Injini ye-optical encane, esebenza kahle kakhulu.

Ukwakhiwa okusatshalaliswe: ukuxhumana okubonakalayo phakathi kokubala okusatshalaliswe, isitoreji, kanye nesitoreji; Ukuqhuba isidingo sama-photodetector asebenzisa amandla kahle futhi ane-bandwidth ephezulu.

Umbono wesikhathi esizayo

Ikusasa lama-optoelectronic high-speed photodetector ahlanganisiwe lizobonisa lezi zindlela ezilandelayo:

Amanani aphezulu edatha: Ukuthuthukisa ukuthuthukiswa kwama-transceivers angu-800G kanye ne-1.6T; Kudingeka ama-Photodetector anama-bandwidth angaphezu kwe-100 GHz.

Ukuhlanganiswa okuthuthukisiwe: Ukuhlanganiswa kwe-single chip kwezinto ze-III-V kanye ne-silicon; Ubuchwepheshe obuthuthukisiwe bokuhlanganiswa kwe-3D.

Izinto ezintsha: Ukuhlola izinto ezinezinhlangothi ezimbili (njenge-graphene) ukuze kutholakale ukukhanya okusheshayo kakhulu; Ingxube entsha yeQembu IV yokumboza ubude be-wavelength obude.

Izinhlelo zokusebenza ezisafufusa: I-LiDAR nezinye izinhlelo zokusebenza zokuzwa ziqhuba ukuthuthukiswa kwe-APD; Izinhlelo zokusebenza ze-microwave photon ezidinga ama-photodetector aphezulu ahambisanayo.

Ama-photodetector asheshayo, ikakhulukazi ama-photodetector e-Ge noma e-Si, abe ngumshayeli oyinhloko we-optoelectronics esekelwe ku-silicon kanye nokuxhumana kwe-optical kwesizukulwane esilandelayo. Intuthuko eqhubekayo ezintweni zokwakha, ukwakheka kwamadivayisi, kanye nobuchwepheshe bokuhlanganisa ibalulekile ukuhlangabezana nezidingo ezikhulayo ze-bandwidth zezikhungo zedatha zesikhathi esizayo kanye namanethiwekhi okuxhumana. Njengoba insimu iqhubeka nokuguquka, singalindela ukubona ama-photodetector ane-bandwidth ephezulu, umsindo ophansi, kanye nokuhlanganiswa okungenamthungo namasekethe kagesi nawe-photonic.