Okwe-opolon-based opoleelectronics, ama-silicon photodeepector (si photoDepector)

Nge-opoleelectonics esekwe ku-silicon, ama-silicon photodeepers

PhotoDeteectorsGuqula amasiginali akhanyayo abe amasiginali kagesi, futhi njengoba amanani wokudlulisa idatha ayaqhubeka nokwenza ngcono, ama-photodeeeest aphezulu ahlanganiswe namapulatifomu we-apoleelectonics we-silicon abe ukhiye ezikhungweni zedatha zesizukulwane esilandelayo kanye namanethiwekhi okuxhumana ngocingo. Lo mbhalo uzohlinzeka ngesibukezo sabafokazi abathuthukile abaphezulu, ngokugcizelelwa kwi-Silicon based Germanium (GE noma i-PhotoDetor)Ama-Silicon PhotoDetectorskubuchwepheshe obuhlanganisiwe be-opoleelectronics.

I-Germalium iyisitatimende esikhangayo sokutholwa kokukhanya okuseduze kwe-infrared kumapulaticon amapulatifol Isakhiwo se-PhotoDector esivame kakhulu se-ge / si siyi-PIN DIOD, lapho i-hingwisic germanium yahlanganiswa khona phakathi kohlobo lwe-P-FINE LO TYPE.

Isakhiwo sesakhiwo sedivayisi 1 sibonisa i-PIN evamile vertical ge nomaBheka I-PhotoDectorIsakhiwo:

Izici eziphambili zifaka: Ungqimba lokuthola i-germanium lukhule ku-silicon substrate; Isetshenziselwe ukuqoqa othintana nabo bakwa-P nabathwali bezokukhokhisa; Ukuhlangana kwe-Wave Gumpiide kokufakwa okulula kokukhanya.

Ukukhula kwe-EpiTaxial: Ukukhula kwekhwalithi ephezulu ye-germanium eSilicon kuyinselele ngenxa ye-4.2% lattice mismatch phakathi kwezinto ezimbili. Inqubo yokukhula kwezinyathelo ezimbili isetshenziswa: izinga lokushisa eliphansi (300-400 ° C) Ukukhula kwesendlalelo kwe-buffer kanye nokushisa okuphezulu (ngaphezulu kwama-600 ° C) Le ndlela isiza ukulawula ukwakheka okumangazayo okubangelwa ama-lattice mismatches. Ukukhulisa okuthuthukayo kokukhula ku-800-900 ° C kunciphisa futhi ukuncibilikisa ukwehla kwethayile ku-10 ^ 7 cm ^ -2. Izici Zokusebenza: I-PhotoDepector esezingeni eliphakeme kakhulu ye-GE / SI CIN ingafinyelela: Ukuphendula,> 0.8A / W ku-1550 nm; I-bandwidth,> 60 GHz; I-Break yamanje, <1 μa ku -1 v shias.

Ukuhlanganiswa namapulatifomu asuselwa ku-opoleelectronics

Ukuhlanganiswa kweIzifo ze-PhotoDeteectors eziphakemeNge-Silicon-based Optoelectorics Platforms inika amandla transceivers athuthukile futhi ukuxhumana. Lezi zindlela ezimbili zokuhlanganisa eziphambili zimi ngokulandelayo: Ukuhlanganiswa kwe-Front-End (FEOL), lapho i-PhotoDetor kanye ne-transistor ikhiqizwa ngasikhathi sinye ku-silicon substrate evumela ukucubungula okushisa okuphezulu, kepha kuthatha indawo ye-chip. Ukuhlanganiswa kokuphela kokuphela (i-beol). Ama-PhotoDeteepers akhiqizwa ngaphezulu kwensimbi ukugwema ukuphazanyiswa ngama-CMO, kepha akhawulelwe kumazinga okushisa aphansi.

Umdwebo 2: Ukuphendula kanye ne-bandwidth ye-GE / SI PhotoDETETETET

Isicelo sedatha yesikhungo

Ama-photodeteectors anesivinini esikhulu ayisici esiyisihluthulelo esizukulwaneni esilandelayo sokuxhumana kwesikhungo sedatha. Izicelo eziphambili zifaka: Transceivers Optical: 100g, 400g namanani aphezulu, esebenzisa ukuguquguquka kwe-PAM-4; AI-PhotoDetth ephezulu ye-bandwidth(> 50 GHz) iyadingeka.

I-Silicon based opoleelectronic ihlanganisiwe yokuhlanganisa: Ukuhlanganiswa kweMonolithic komtshina nge-modulator nezinye izinto; Injini ebonakalayo ephakeme, ephezulu yokusebenza.

Ukwakhiwa okusatshalaliswa: Ukuxhumeka kwe-Optical phakathi kwekhompyutha esatshalaliswa, isitoreji, kanye nokugcinwa; Ukushayela isidingo se-PhotoDeteectors esebenza kahle, ephezulu ye-bandwidth.

Umbono wesikhathi esizayo

Ikusasa lama-photodeeeeta ahlanganisiwe we-opoleelectronic aphezulu azokhombisa izitayela ezilandelayo:

Amanani wedatha ephezulu: Ukushayela ukuthuthukiswa kwama-800g kanye ne-1.6T transceivers; Ama-PhotoDeteepers anama-bandwidth amakhulu kune-100 GHZ ayadingeka.

Ukuhlanganiswa okuthuthukile: Ukuhlanganiswa kwe-Chip eyodwa ye-III-V Material and Silicon; Ubuchwepheshe bokuhlanganisa be-3D obuthuthukisiwe.

Izinto ezintsha: ukuhlola izinto ezimbili ezinezici ezimbili (njenge-graphene) ngokutholwa kokukhanya kwe-ultrafast; Iqembu elisha le-IV i-Aloy yokuthola imali ye-wavengeth.

Izicelo ezivelayo: I-Lidar nezinye izinhlelo zokusebenza zokuzwa zishayela ukuthuthukiswa kwe-APD; Izicelo ze-Microwave Photon ezidinga ama-photodeeteretity aphezulu.

Izifo ze-PhotoDeteectors ezinesivinini esiphakeme, ikakhulukazi i-GE noma i-PhotoDepectors ye-GE noma ye-SIT, isibe umshayeli osemqoka we-Optoelectronics esekwe ku-silicon kanye nokuxhumana okulandelayo kwesizukulwane. Ukuqhubeka kwentuthuko ngezinto zokwakha, ukwakheka kwamadivayisi, kanye nobuchwepheshe bokuhlanganisa kubalulekile ukuze kuhlangatshezwane nezidingo ezikhulayo ze-bandwidth zezikhungo zedatha ezizayo namanethiwekhi okuxhumana ngocingo. Njengoba insimu iyaqhubeka nokuvela, singalindela ukubona ama-photodeteeete nge-bandwidth ephezulu, umsindo ophansi, nokuhlanganiswa komthungo nemibuthano kagesi ne-Photonic.