Okwe-silicon-based optoelectronics, ama-silicon photodetectors(Si photodetector)

Nge-silicon-based optoelectronics, ama-silicon photodetectors

Ama-Photodetectorsguqula amasignali okukhanya abe amasignali kagesi, futhi njengoba amazinga okudlulisa idatha eqhubeka ethuthuka, ama-photodetectors anesivinini esiphezulu ahlanganiswe namapulatifomu e-silicon-based optoelectronics abe ukhiye ezikhungweni zedatha zesizukulwane esilandelayo kanye namanethiwekhi okuxhumana ngocingo. Lesi sihloko sizohlinzeka ngemininingwane yama-photodetector anesivinini esiphezulu, ngokugcizelela ku-silicon based germanium (Ge noma Si photodetector)ama-silicon photodetectorsubuchwepheshe obuhlanganisiwe be-optoelectronics.

I-Germanium iyinto ekhangayo yokuthola ukukhanya okuseduze kwe-infrared ezisekelweni ze-silicon ngoba ihambisana nezinqubo ze-CMOS futhi inokumunca okuqine kakhulu kumaza wamaza okuxhumana ngocingo. Isakhiwo esivame kakhulu se-Ge/Si photodetector yi-pin diode, lapho i-intrinsic germanium ihlanganiswe phakathi kwezifunda zohlobo lwe-P kanye nohlobo lwe-N.

Isakhiwo sedivayisi Umfanekiso 1 ubonisa iphinikhodi evamile eqondile u-Ge nomaI-photodetectorisakhiwo:

Izici eziyinhloko zifaka: ungqimba olumunca i-germanium olukhule ku-silicon substrate; Isetshenziselwa ukuqoqa othintana nabo abangu-p no-n babathwali bokushaja; Ukuhlanganisa i-Waveguide ukuze kufakwe ukukhanya okusebenzayo.

Ukukhula kwe-Epitaxial: Ukukhulisa i-germanium yekhwalithi ephezulu ku-silicon kuyinselele ngenxa yokungafani kwe-lattice okungu-4.2% phakathi kwezinto ezimbili. Inqubo yokukhula enezinyathelo ezimbili ivamise ukusetshenziswa: izinga lokushisa eliphansi (300-400°C) ukukhula kongqimba lwebhafa kanye nezinga lokushisa eliphezulu (ngaphezu kuka-600°C) ukubekwa kwe-germanium. Le ndlela isiza ukulawula ukuhlukaniswa kwentambo okubangelwa ukungafani kwe-lattice. I-annealing yangemva kokukhula ku-800-900°C iphinde yehlise ukuminyana kokugudluzwa kwentambo ibe cishe ku-10^7 cm^-2. Izici zokusebenza: Isithwebuli sesithombe se-Ge/Si PIN esithuthuke kakhulu singafinyelela: ukuphendula, > 0.8A /W ku-1550 nm; Umkhawulokudonsa,>60 GHz; Amandla amnyama, <1 μA at -1 V ukuchema.

Ukuhlanganiswa namapulatifomu e-silicon-based optoelectronics

Ukuhlanganiswa kweama-photodetectors anesivinini esikhulunge-silicon-based optoelectronics platforms yenza ama-transceivers optical athuthukile kanye nokuxhumana. Izindlela ezimbili eziyinhloko zokuhlanganisa yilezi ezilandelayo: Ukuhlanganiswa kwe-Front-end (FEOL), lapho i-photodetector kanye ne-transistor kukhiqizwa ngesikhathi esisodwa ku-silicon substrate evumela ukucubungula okuphezulu kwezinga lokushisa, kodwa kuthatha indawo ye-chip. Ukuhlanganiswa kwe-back-end (BEOL). Ama-photodetectors akhiqizwa ngaphezulu kwensimbi ukugwema ukuphazamiseka kwe-CMOS, kodwa anqunyelwe emazingeni okushisa aphansi okucubungula.

Umfanekiso 2: Ukusabela kanye nomkhawulokudonsa wesithombe se-Ge/Si esinesivinini esikhulu

Isicelo sesikhungo sedatha

Ama-photodetectors anesivinini esiphezulu ayingxenye ebalulekile esizukulwaneni esilandelayo sokuxhunywa kwesikhungo sedatha. Izinhlelo zokusebenza eziyinhloko zifaka: ama-transceivers optical :100G, 400G namazinga aphezulu, usebenzisa i-PAM-4 modulation; Ahigh bandwidth photodetector(>50 GHz) iyadingeka.

I-silicon-based optoelectronic integrated circuit: ukuhlanganiswa kwe-monolithic komtshina nge-modulator nezinye izingxenye; Injini yokubona ehlangene, esebenza kahle kakhulu.

Izakhiwo ezisatshalalisiwe: ukuxhumana okubonakalayo phakathi kwekhompyutha esabalalisiwe, isitoreji, nesitoreji; Ukushayela isidingo sezithonjana zokuthwebula ezonga amandla, ezinomkhawulokudonsa ophezulu.

Umbono wekusasa

Ikusasa lama-optoelectronic photodetectors adidiyelwe lizobonisa amathrendi alandelayo:

Amanani aphezulu wedatha: Ukushayela ukuthuthukiswa kwama-transceivers angu-800G kanye ne-1.6T; Kudingeka izitholi zezithombe ezinomkhawulokudonsa omkhulu kuno-100 GHz.

Ukuhlanganiswa okuthuthukisiwe: Ukuhlanganiswa kwe-chip eyodwa kwezinto ze-III-V ne-silicon; Ubuchwepheshe obuthuthukisiwe bokuhlanganisa i-3D.

Izinto ezintsha: Ukuhlola izinto ezinezinhlangothi ezimbili (njenge-graphene) ukuze uthole ukukhanya okushesha kakhulu; Ingxubevange entsha yeQembu IV yokufakwa kwe-wavelength enwetshiwe.

Izinhlelo zokusebenza ezisafufusa: I-LiDAR nezinye izinhlelo zokusebenza zokuzwa zishayela ukuthuthukiswa kwe-APD; Izinhlelo zokusebenza ze-Microwave photon ezidinga ama-photodetectors womugqa ophezulu.

Ama-photodetectors anesivinini esikhulu, ikakhulukazi ama-Ge noma ama-Si photodetectors, abe umshayeli oyinhloko we-silicon-based optoelectronics kanye nesizukulwane esilandelayo sokuxhumana optical. Ukuthuthuka okuqhubekayo kokubalulekile, ukwakheka kwedivayisi, nobuchwepheshe bokuhlanganisa kubalulekile ukuze kuhlangatshezwane nezidingo ezikhulayo zomkhawulokudonsa wezikhungo zedatha zesikhathi esizayo namanethiwekhi ezokuxhumana. Njengoba inkambu iqhubeka nokuvela, singalindela ukubona ama-photodetectors anomkhawulokudonsa ophezulu, umsindo ophansi, nokuhlanganiswa okungenamthungo namasekhethi e-electronic kanye ne-photonic.