Okokuxhumana okunesivinini esiphezulu okuhambisana ne-silicon-based optoelectronic IQ modulator

I-compact silicon-based optoelectronicI-IQ moduleukuxhumana okunesivinini esikhulu
Isidingo esikhulayo samazinga aphezulu okudluliswa kwedatha kanye nama-transceivers awonga amandla engeziwe ezikhungweni zedatha kuqhubekisele phambili ukuthuthukiswa kokusebenza okuphezulu okuhlangene.ama-modulators optical. Ubuchwepheshe be-silicone obusekelwe ku-optoelectronic (SiPh) sebuphenduke inkundla ethembisayo yokuhlanganisa izingxenye ezihlukahlukene ze-photonic ku-chip eyodwa, okwenza izixazululo ezihlangene nezingabizi kakhulu. Lesi sihloko sizohlola imodyuli yenoveli ecindezelwe ye-silicon IQ esekelwe ku-GeSi EAMs, engasebenza ngemvamisa efika ku-75 Gbaud.
Idizayini yedivayisi nezici
Imoduli ye-IQ ehlongozwayo isebenzisa ukwakheka kwezingalo ezintathu ezihlangene, njengoba kukhonjisiwe kuMfanekiso 1 (a). Ihlanganiswe ngama-GeSi EAM amathathu kanye neziguquli ezintathu zesigaba se-thermo optical, esebenzisa ukucushwa kwe-symmetrical. Ukukhanya okokufaka kuhlanganiswe ku-chip nge-coupler yokugaya (GC) futhi kuhlukaniswe ngokulinganayo kube izindlela ezintathu nge-interferometer ye-multimode engu-1 × 3 (MMI). Ngemva kokudlula ku-modulator kanye nesiguquli sesigaba, ukukhanya kuphinde kuhlanganiswe enye i-1 × 3 MMI bese kuhlanganiswe nefayibha yemodi eyodwa (SSMF).

Umfanekiso 1: (a) Isithombe esincane se-IQ modulator; (b) – (d) EO S21, i-extinction ratio spectrum, kanye nokudluliswa kwe-GeSi EAM eyodwa; (e) Umdwebo wohlelo lwemoduli ye-IQ kanye nesigaba sokubonwayo esihambisanayo sesishintshi sesigaba; (f) Ukumelwa komthwali wokucindezelwa endizeni eyinkimbinkimbi. Njengoba kukhonjisiwe kuMfanekiso 1 (b), i-GeSi EAM inomkhawulokudonsa obanzi we-electro-optic. Umfanekiso 1 (b) ulinganise ipharamitha ye-S21 yesakhiwo esisodwa sokuhlola se-GeSi EAM kusetshenziswa i-67 GHz optical component analyzer (LCA). Amanani 1 (c) kanye no-1 (d) ngokulandelana abonisa i-spectra ye-static extinction ratio (ER) kuma-voltage e-DC ahlukene kanye nokudluliswa kwe-wavelength yama-nanometer angu-1555.
Njengoba kuboniswe kuMfanekiso 1 (e), isici esiyinhloko salo mklamo yikhono lokucindezela abathwali be-optical ngokulungisa isishintshi sesigaba esihlanganisiwe engalweni ephakathi. Umehluko wesigaba phakathi kwezingalo ezingenhla neziphansi ngu-π/2, esetshenziselwa ukulungisa okuyinkimbinkimbi, kuyilapho umehluko wesigaba phakathi kwengalo emaphakathi ngu--3 π/4. Lokhu kulungiselelwa kuvumela ukuphazamiseka okulimazayo kumthwali, njengoba kuboniswe endizeni eyinkimbinkimbi yoMfanekiso 1 (f).
Ukusethwa kokuhlola nemiphumela
Ukusethwa kokuhlolwa kwesivinini esikhulu kuboniswa kuMfanekiso 2 (a). Ijeneretha ye-waveform engafanele (Keysight M8194A) isetshenziswa njengomthombo wesiginali, futhi ama-amplifiers amabili wesigaba esingu-60 GHz afana ne-RF (anama-bias tees ahlanganisiwe) asetshenziswa njengezishayeli zamamoduli. I-voltage echema ye-GeSi EAM ingu--2.5 V, futhi ikhebula le-RF elifaniswe nesigaba lisetshenziselwa ukunciphisa ukungafani kwesigaba sikagesi phakathi kweziteshi ze-I ne-Q.
Umfanekiso 2: (a) Ukusethwa kokuhlolwa kwesivinini esiphezulu, (b) Ukucindezela inkampani yenethiwekhi ku-70 Gbaud, (c) Izinga lephutha nezinga ledatha, (d) I-Constellation ku-70 Gbaud. Sebenzisa i-laser ye-cavity yangaphandle yokuhweba (ECL) enobubanzi bomugqa obungu-100 kHz, ubude begagasi obungu-1555 nm, namandla angu-12 dBm njengesithwali esibonakalayo. Ngemuva kokuguqulwa, isignali ye-optical ikhuliswa kusetshenziswa ii-erbium-doped fiber amplifier(EDFA) ukunxephezela ukulahlekelwa kokuhlanganisa i-on-chip kanye nokulahlekelwa kokufaka imodyuli.
Ekupheleni kokwamukela, i-Optical Spectrum Analyzer (OSA) iqapha i-spectrum yesiginali kanye nokucindezelwa kwenkampani yenethiwekhi, njengoba kuboniswe kuMfanekiso 2 (b) wesignali engu-70 Gbaud. Sebenzisa isamukeli esihambisanayo se-polarization ukuze uthole amasignali, ahlanganisa i-90 degree optical mixer kanye nezine.40 GHz ama-photodiode alinganiselayo, futhi ixhumeke ku-33 GHz, 80 GSa/s real-time oscilloscope (RTO) (Keysight DSOZ634A). Umthombo wesibili we-ECL onobubanzi bomugqa obungu-100 kHz usetshenziswa njenge-oscillator yendawo (LO). Ngenxa yesidlulisi esisebenza ngaphansi kwezimo ze-polarization eyodwa, iziteshi zikagesi ezimbili kuphela ezisetshenziselwa ukuguqulwa kwe-analog-to-digital (ADC). Idatha irekhodwa ku-RTO futhi icutshungulwe kusetshenziswa iphrosesa yesignali yedijithali engaxhunyiwe ku-inthanethi (DSP).
Njengoba kuboniswe ku-Figure 2 (c), i-modulator ye-IQ ihlolwe kusetshenziswa ifomethi yokushintshashintsha ye-QPSK kusuka ku-40 Gbaud kuya ku-75 Gbaud. Imiphumela ibonisa ukuthi ngaphansi kwezimo ezingu-7% zokulungiswa kwephutha lesinqumo esinzima (HD-FEC), izinga lingafinyelela ku-140 Gb / s; Ngaphansi kwesimo se-20% sokulungiswa kwephutha lesinqumo esithambile (SD-FEC), isivinini singafinyelela ku-150 Gb/s. Umdwebo womlaza ku-70 Gbaud uboniswa kuMfanekiso 2 (d). Umphumela unqunyelwe umkhawulokudonsa we-oscilloscope ongu-33 GHz, olingana nomkhawulokudonsa wesiginali ongaba ngu-66 Gbaud.

Njengoba kuboniswe kuMfanekiso 2 (b), ukwakheka kwezingalo ezintathu kungacindezela ngempumelelo abathwali bamehlo ngezinga elingenalutho elingaphezu kuka-30 dB. Lesi sakhiwo asidingi ukucindezelwa okuphelele kwenkampani yenethiwekhi futhi singasetshenziswa kwabamukeli abadinga amathoni enkampani yenethiwekhi ukuthola amasiginali, njengabamukeli be-Kramer Kronig (KK). Inkampani yenethiwekhi ingalungiswa ngokusebenzisa isishintshi sesigaba sengalo esimaphakathi ukuze kuzuzwe isilinganiso esifiswayo senkampani yenethiwekhi ukuya ku-sideband ratio (CSR).
Izinzuzo kanye nezicelo
Uma kuqhathaniswa namamoduli endabuko e-Mach Zehnder (Amamojula we-MZM) kanye nezinye i-silicon-based optoelectronic IQ modulators, i-silicon IQ modulator ehlongozwayo inezinzuzo eziningi. Okokuqala, ihlangene ngosayizi, incane izikhathi ezingaphezu kwe-10 kune-IQ modulators esekelweI-Mach Zehnder modulators(ngaphandle kwama-bonding pads), ngaleyo ndlela kwandise ukuminyana kokuhlanganisa nokunciphisa indawo ye-chip. Okwesibili, idizayini enqwabelene yama-electrode ayidingi ukusetshenziswa kwezinqamuleli zetheminali, ngaleyo ndlela inciphisa amandla edivayisi namandla kancane kancane. Okwesithathu, amandla okucindezela inkampani yenethiwekhi akhulisa ukuncishiswa kwamandla okudlulisela, kuthuthukise ukusebenza kahle kwamandla.
Ukwengeza, umkhawulokudonsa obonakalayo we-GeSi EAM ubanzi kakhulu (ngaphezu kwama-nanometers angu-30), ususa isidingo samasekhethi okulawula impendulo yeziteshi eziningi kanye namaphrosesa ukuze kuzinze futhi avumelanise ukuzwakala kwamamoduli ama-microwave (MRMs), ngaleyo ndlela kube lula ukuklama.
Le modulator ye-IQ ehlangene nesebenza kahle ifaneleka kakhulu isizukulwane esilandelayo, ukubala kwesiteshi esiphezulu, nama-transceiver amancane ahambisanayo ezikhungweni zedatha, okuvumela umthamo ophakeme kanye nokuxhumana okubonakalayo okonga amandla.
Imodulator ye-silicon IQ ecindezelwe inkampani yenethiwekhi ibonisa ukusebenza okuhle kakhulu, ngezinga lokudluliswa kwedatha elifika ku-150 Gb/s ngaphansi kwezimo ezingu-20% ze-SD-FEC. Ukwakheka kwayo okuhlangene kwengalo engu-3 okusekelwe ku-GeSi EAM kunezinzuzo eziphawulekayo mayelana nokunyathelisa kwezinyawo, ukusebenza kahle kwamandla, kanye nobulula bomklamo. Lesi siguquli sinamandla okucindezela noma ukulungisa isithwali esibonayo futhi singahlanganiswa nokutholwa okuhambisanayo kanye nezikimu zokuthola i-Kramer Kronig (KK) zama-transceiver ahambisanayo emigqa eminingi. Izimpumelelo ezibonisiwe ziqhuba ukugcwaliseka kwama-transceiver optical ahlanganiswe kakhulu futhi asebenza kahle ukuze ahlangabezane nesidingo esikhulayo sokuxhumana kwedatha okunamandla aphezulu ezikhungweni zedatha nakweminye imikhakha.