I-optoelectronic esuselwe ku-silicon encaneI-modulator ye-IQukuxhumana okusheshisa kakhulu
Isidingo esikhulayo samazinga aphezulu okudlulisa idatha kanye nama-transceivers asebenzisa amandla amaningi ezindaweni zedatha kuye kwaholela ekuthuthukisweni kokusebenza okuphezulu okuhlangeneama-modulators opticalUbuchwepheshe be-optoelectronic obusekelwe ku-silicon (i-SiPh) bube yipulatifomu ethembisayo yokuhlanganisa izingxenye ezahlukene ze-photonic ku-chip eyodwa, okuvumela izixazululo ezincane nezingabizi kakhulu. Lesi sihloko sizohlola i-modulator entsha ye-silicon IQ ecindezelwe esuselwe kuma-GeSi EAM, angasebenza ngemvamisa efika ku-75 Gbaud.
Umklamo wedivayisi nezici
I-modulator ye-IQ ehlongozwayo isebenzisa isakhiwo esiqinile sezingalo ezintathu, njengoba kuboniswe kuMfanekiso 1 (a). Yakhiwe ngama-GeSi EAM amathathu kanye nama-thermo optical phase shifter amathathu, isebenzisa ukucushwa okulinganayo. Ukukhanya kokufaka kuhlanganiswe ku-chip nge-grating coupler (GC) futhi kuhlukaniswe ngokulinganayo kube yizindlela ezintathu nge-1×3 multimode interferometer (MMI). Ngemva kokudlula ku-modulator kanye ne-phase shifter, ukukhanya kuhlanganiswa kabusha nge-1×3 MMI enye bese kuhlanganiswa ne-fiber ye-single-mode (SSMF).
Isithombe 1: (a) Isithombe se-Microscopic se-IQ modulator; (b) – (d) I-EO S21, i-extinction ratio spectrum, kanye nokudluliselwa kwe-GeSi EAM eyodwa; (e) Umdwebo we-schematic we-IQ modulator kanye ne-optical phase ehambisanayo ye-phase shifter; (f) Ukumelwa kokucindezela kwe-carrier endizeni eyinkimbinkimbi. Njengoba kuboniswe ku-Figure 1 (b), i-GeSi EAM ine-bandwidth ebanzi ye-electro-optic. Isithombe 1 (b) silinganise ipharamitha ye-S21 yesakhiwo sokuhlola se-GeSi EAM esisodwa kusetshenziswa i-67 GHz optical component analyzer (LCA). Izibalo 1 (c) kanye no-1 (d) ngokulandelana zibonisa i-static extinction ratio (ER) spectra kuma-voltage ahlukene e-DC kanye nokudluliselwa ku-wavelength yama-nanometer angu-1555.
Njengoba kuboniswe kuMfanekiso 1 (e), isici esiyinhloko salo mklamo yikhono lokucindezela abathwali be-optical ngokulungisa i-integrated phase shifter engalweni ephakathi. Umehluko wesigaba phakathi kwezingalo eziphezulu nezingezansi ngu-π/2, osetshenziselwa ukulungisa okuyinkimbinkimbi, kanti umehluko wesigaba phakathi kwengalo ephakathi ngu-3 π/4. Lokhu kulungiselelwa kuvumela ukuphazamiseka okubhubhisayo kumthwali, njengoba kuboniswe endizeni eyinkimbinkimbi yeMfanekiso 1 (f).
Ukusethwa kokuhlola nemiphumela
Ukusethwa kokuhlolwa kwesivinini esikhulu kuboniswe kuMfanekiso 2 (a). Ijeneretha ye-waveform engahleliwe (i-Keysight M8194A) isetshenziswa njengomthombo wesignali, kanti ama-amplifier amabili e-RF ahambisana nesigaba sama-60 GHz (ane-bias tees ehlanganisiwe) asetshenziswa njengabashayeli be-modulator. I-voltage ye-bias ye-GeSi EAM ingu-2.5 V, kanti ikhebula le-RF elihambisana nesigaba lisetshenziswa ukunciphisa ukungalingani kwesigaba sikagesi phakathi kweziteshi ze-I ne-Q.
Umfanekiso 2: (a) Ukusetha kokuhlola kwesivinini esiphezulu, (b) Ukucindezela kwenkampani ku-70 Gbaud, (c) Izinga lephutha kanye nezinga ledatha, (d) I-Constellation ku-70 Gbaud. Sebenzisa i-laser yangaphandle ye-commercial cavity (ECL) enobubanzi bomugqa obungu-100 kHz, ubude be-wavelength obungu-1555 nm, kanye namandla angu-12 dBm njengesithwali se-optical. Ngemva kokushintshashintsha, isignali ye-optical iyandiswa kusetshenziswa i-i-amplifier yefayibha efakwe i-erbium(EDFA) ukuze kunxeshezelwe ukulahlekelwa kokuxhumanisa okuku-chip kanye nokulahlekelwa kokufakwa kwe-modulator.
Ekugcineni kokwamukela, i-Optical Spectrum Analyzer (OSA) iqapha i-signal spectrum kanye nokucindezelwa kwenkampani, njengoba kuboniswe kuMfanekiso 2 (b) ukuze uthole isignali engu-70 Gbaud. Sebenzisa isamukeli esihlangene se-polarization ezimbili ukuze uthole amasignali, aqukethe i-optical mixer engu-90 degrees kanye ne-fourAma-photodiode alinganisiwe angu-40 GHz, futhi ixhunywe ku-33 GHz, 80 GSa/s real-time oscilloscope (RTO) (Keysight DSOZ634A). Umthombo wesibili we-ECL onobubanzi bomugqa obungu-100 kHz usetshenziswa njenge-local oscillator (LO). Ngenxa yokuthi i-transmitter isebenza ngaphansi kwezimo ze-single polarization, kusetshenziswa iziteshi ezimbili kuphela ze-elekthronikhi zokuguqulwa kwe-analog-to-digital (ADC). Idatha iqoshwa ku-RTO futhi icutshungulwe kusetshenziswa iprosesa yesignali yedijithali engaxhunyiwe ku-inthanethi (DSP).
Njengoba kuboniswe kuMfanekiso 2 (c), i-IQ modulator ihlolwe kusetshenziswa ifomethi ye-QPSK modulation kusuka ku-40 Gbaud kuya ku-75 Gbaud. Imiphumela ikhombisa ukuthi ngaphansi kwezimo ze-7% hard decision forward error correction (HD-FEC), izinga lingafinyelela ku-140 Gb/s; Ngaphansi kwesimo se-20% soft decision forward error correction (SD-FEC), ijubane lingafinyelela ku-150 Gb/s. Umdwebo we-constellation ku-70 Gbaud uboniswe kuMfanekiso 2 (d). Umphumela unqunyelwe yi-bandwidth ye-oscilloscope engu-33 GHz, elingana ne-bandwidth yesignali engaba ngu-66 Gbaud.
Njengoba kuboniswe kuMfanekiso 2 (b), isakhiwo sezingalo ezintathu singacindezela ngempumelelo izithwali ze-optical ngesilinganiso sokungaguquki esingaphezu kuka-30 dB. Lesi sakhiwo asidingi ukucindezelwa okuphelele kwesithwali futhi singasetshenziswa nakumamukeli adinga amathoni esithwali ukuze abuyisele amasignali, njengezamukeli ze-Kramer Kronig (KK). Isithwali singalungiswa nge-central arm phase shifter ukuze kufezwe isilinganiso esifunwayo sesithwali kuya kwe-sideband (CSR).
Izinzuzo kanye Nezicelo
Uma kuqhathaniswa nama-modulators endabuko e-Mach Zehnder (Ama-modulators e-MZM) kanye nezinye iziqondisi ze-IQ ze-optoelectronic ezisekelwe ku-silicon, i-silicon IQ modulator ehlongozwayo inezinzuzo eziningi. Okokuqala, incane ngobukhulu, incane ngokuphindwe kayishumi kuneziqondisi ze-IQ ezisekelwe ku-Ama-modulators e-Mach Zehnder(ngaphandle kwama-bonding pads), ngaleyo ndlela kwandisa ubuningi bokuhlanganiswa kanye nokunciphisa indawo ye-chip. Okwesibili, ukwakheka kwe-electrode ehlanganisiwe akudingi ukusetshenziswa kwama-resistors esiphetho, ngaleyo ndlela kunciphisa amandla edivayisi kanye namandla nge-bit ngayinye. Okwesithathu, amandla okucindezela isithwali akhulisa ukwehla kwamandla okudlulisa, okuthuthukisa ukusebenza kahle kwamandla.
Ngaphezu kwalokho, i-bandwidth ye-optical ye-GeSi EAM ibanzi kakhulu (ngaphezu kwama-nanometer angu-30), okususa isidingo samasekethe okulawula impendulo yeziteshi eziningi kanye nama-processor ukuze kuqiniswe futhi kuvumelaniswe ukuzwakala kwama-modulators e-microwave (ama-MRM), ngaleyo ndlela kube lula ukuklama.
Le modulator ye-IQ encane nesebenza kahle ifaneleka kakhulu esizukulwaneni esilandelayo, inani elikhulu leziteshi, kanye nama-transceivers amancane ahambisanayo ezikhungweni zedatha, okwenza kube namandla aphezulu kanye nokuxhumana okubonakalayo okusebenzisa amandla amaningi.
I-modulator ye-silicon IQ ecindezelwe yenkampani ibonisa ukusebenza okuhle kakhulu, ngesilinganiso sokudluliswa kwedatha esifinyelela ku-150 Gb/s ngaphansi kwezimo ze-SD-FEC ezingama-20%. Isakhiwo sayo esincane esinezingalo ezintathu esisekelwe ku-GeSi EAM sinezinzuzo ezibalulekile maqondana nokunyakaza, ukusebenza kahle kwamandla, kanye nokulula komklamo. Le modulator inekhono lokucindezela noma ukulungisa i-optical carrier futhi ingahlanganiswa nokutholwa okuhlangene kanye nezinhlelo zokuthola i-Kramer Kronig (KK) zama-transceivers ahlangene anemigqa eminingi. Impumelelo ebonisiwe iqhuba ukuqashelwa kwama-transceivers optical ahlanganiswe kakhulu futhi asebenza kahle ukuze kuhlangatshezwane nesidingo esikhulayo sokuxhumana kwedatha okunamandla aphezulu ezikhungweni zedatha nakwezinye izinkambu.
Isikhathi sokuthunyelwe: Jan-21-2025