Inqubekela phambili Yocwaningo Lwe-InGaAs photodetector

Inqubekela phambili YocwaningoIsitholi sezithombe se-InGaAs

Ngokukhula okukhulu kwevolumu yokudlulisa idatha yokuxhumana, ubuchwepheshe bokuxhumanisa i-optical buthathe indawo yobuchwepheshe bendabuko bokuxhumanisa i-elekthronikhi futhi sebuyindlela yobuchwepheshe eyinhloko yokudlulisela isivinini esiphezulu esiphansi esiphakathi nendawo neside. Njengengxenye eyinhloko yokuphela kokwamukela i-optical, i-umshini wokuthola izithombeinezidingo eziphakeme kakhulu zokusebenza kwayo ngesivinini esikhulu. Phakathi kwazo, i-waveguide coupled photodetector incane ngosayizi, i-bandwidth ephezulu, futhi kulula ukuyihlanganisa ne-on-chip namanye amadivayisi e-optoelectronic, okuwukugxila kocwaningo lwe-high-speed photodetection. futhi yizona ezimele kakhulu i-photodetector ebhendini yokuxhumana ye-near-infrared.

I-InGaAs ingenye yezinto ezifanelekile zokufeza isivinini esikhulu kanyeama-photodetector aphendula kakhuluOkokuqala, i-InGaAs iyinto ye-semiconductor ye-bandgap eqondile, futhi ububanzi bayo be-bandgap bungalawulwa yisilinganiso esiphakathi kwe-In ne-Ga, okuvumela ukutholakala kwezimpawu zokukhanya zama-wavelength ahlukene. Phakathi kwazo, i-In0.53Ga0.47As ifaniswe kahle ne-InP substrate lattice futhi ine-coefficient ephezulu kakhulu yokumuncwa kokukhanya ku-optical communication band. Iyona esetshenziswa kakhulu ekulungiseleleni i-photodetector futhi futhi inomsinga omnyama ogqamile kanye nokusebenza kokuphendula. Okwesibili, zombili izinto ze-InGaAs kanye ne-InP zinejubane eliphezulu lokukhukhuleka kwama-electron, kanye nejubane lazo lokukhukhuleka kwama-electron eligcwele cishe liyi-1×107cm/s. Okwamanje, ngaphansi kwezinkambu ezithile zikagesi, izinto ze-InGaAs kanye ne-InP zibonisa imiphumela yokukhukhuleka kwejubane lama-electron, kanye nejubane lazo lokukhukhuleka elifinyelela ku-4×107cm/s kanye no-6×107cm/s ngokulandelana. Kusiza ekufinyeleleni i-bandwidth ephezulu yokuwela. Njengamanje, ama-photodetector e-InGaAs angama-photodetector ajwayelekile kakhulu okuxhumana kwe-optical. Kuye kwasungulwa nezitholi zezehlakalo zomphezulu ezincane, ezibangelwa yizigameko zasemuva, kanye nezinomkhawulo ophezulu, ezisetshenziswa kakhulu ezinhlelweni zokusebenza ezifana nesivinini esikhulu kanye nokugcwala okuphezulu.

Kodwa-ke, ngenxa yokulinganiselwa kwezindlela zabo zokuxhumanisa, ama-surface incidence detectors kunzima ukuwahlanganisa namanye amadivayisi e-optoelectronic. Ngakho-ke, njengoba isidingo sokuhlanganiswa kwe-optoelectronic sikhula, ama-photodetector e-InGaAs ahlanganiswe yi-waveguide asebenza kahle kakhulu futhi afanele ukuhlanganiswa abe yinto ebalulekile ocwaningweni. Phakathi kwawo, amamojula e-InGaAs photodetector e-70GHz kanye ne-110GHz cishe wonke asebenzisa izakhiwo zokuxhumanisa ze-waveguide. Ngokusho komehluko wezinto ezingaphansi komhlaba, ama-photodetector e-InGaAs ahlanganiswe yi-waveguide angahlukaniswa kakhulu ngezinhlobo ezimbili: ezisekelwe ku-INP kanye nezisekelwe ku-Si. I-epitaxial yezinto eziku-InP substrates inekhwalithi ephezulu futhi ifaneleka kakhulu ekwakhiweni kwamadivayisi asebenza kahle kakhulu. Kodwa-ke, ezintweni zeqembu le-III-V ezikhuliswe noma eziboshiwe ku-Si substrates, ngenxa yokungafani okuhlukahlukene phakathi kwezinto ze-InGaAs kanye ne-Si substrates, ikhwalithi yezinto noma isikhombimsebenzisi iphansi kakhulu, futhi kusenendawo enkulu yokuthuthukisa ukusebenza kwamadivayisi.

Idivayisi isebenzisa i-InGaAsP esikhundleni se-InP njengezinto zesifunda sokuncipha. Nakuba yehlisa ijubane lokugeleza kokugcwala kwama-electron ngezinga elithile, ithuthukisa ukuhlangana kokukhanya kwesigameko kusuka ku-waveguide kuya esifundeni sokumunca. Ngesikhathi esifanayo, ungqimba lokuxhumana lohlobo lwe-InGaAsP N luyasuswa, bese kwakheka igebe elincane ohlangothini ngalunye lobuso bohlobo lwe-P, okuthuthukisa ngempumelelo umkhawulo ensimini yokukhanya. Kusiza idivayisi ukuthi ifinyelele ukusabela okuphezulu.