Inqubekelaphambili Yocwaningo lwe-InGaAs photodetector

Inqubekelaphambili yocwaningo lweIsithwebuli sezithombe se-InGaAs

Ngokukhula okunamandla kwevolumu yokudluliswa kwedatha yezokuxhumana, ubuchwepheshe bokuxhumanisa i-optical interconnection buthathe indawo yobuchwepheshe bendabuko bokuxhuma ugesi futhi sebube ubuchwepheshe obujwayelekile bokudluliswa kwebanga eliphakathi nebanga eliphansi lokulahlekelwa okuphansi kwesivinini. Njengengxenye eyinhloko yendawo yokwamukela ye-optical, ii-photodetectorinezidingo ezikhuphukayo eziphakeme zokusebenza kwayo ngesivinini esikhulu. Phakathi kwazo, i-waveguide ehlanganisiwe ye-photodetector incane ngosayizi, iphezulu kumkhawulokudonsa, futhi kulula ukuhlanganiswa ku-chip namanye amadivaysi e-optoelectronic, okugxilwe kuyo ucwaningo lwe-photodetection enesivinini esikhulu. futhi zingama-photodetectors amele kakhulu kubhendi yokuxhumana eseduze ne-infrared.

I-InGaAs ingenye yezinto ezifanele zokufeza isivinini esikhulu kanyeama-photodetectors anempendulo ephezulu. Okokuqala, i-InGaAs iyinto eqondile ye-bandgap semiconductor, futhi ububanzi bayo be-bandgap bungalawulwa ngesilinganiso phakathi kwe-In ne-Ga, okuvumela ukutholwa kwamasignali okubona amaza ahlukene. Phakathi kwazo, i-In0.53Ga0.47As ifanelana ngokuphelele ne-InP substrate lattice futhi ine-coefficient yokumunca ukukhanya ephezulu kakhulu ebhendini yokuxhumana yokubona. Yisona esisetshenziswa kakhulu ekulungiseni isithwebuli sezithombe futhi sinokusebenza kwamanje okumnyama okuvelele kakhulu nokusebenza kokuphendula. Okwesibili, kokubili ama-InGaAs kanye nezinto ze-InP zinama-electron drift velocities aphakeme uma kuqhathaniswa, nesivinini sazo sokukhukhuleka se-electron womabili acishe abe ngu-1×107cm/s. Ngaleso sikhathi, ngaphansi kwezinkambu ezithile zikagesi, i-InGaAs kanye ne-InP materials ibonisa imiphumela ye-electron velocity overshoot, nesivinini sazo sokudlula esifinyelela ku-4×107cm/s naku-6×107cm/s ngokulandelana. Kuyasiza ekuzuzeni umkhawulokudonsa owela phezulu. Njengamanje, ama-photodetectors e-InGaAs yiwona ajwayeleke kakhulu ekutholeni izithombe ekuxhumaneni kwamehlo. Izitholi zesigameko ezinosayizi omncane, ezehlakalo zasemuva, kanye nomkhawulokudonsa ophezulu nazo zakhiwe, ikakhulukazi ezisetshenziswayo ezifana nesivinini esikhulu nokugcwala kwamanzi.

Kodwa-ke, ngenxa yemikhawulo yezindlela zabo zokuhlanganisa, izitholi zesigameko esingaphezulu kunzima ukuzihlanganisa namanye amadivaysi e-optoelectronic. Ngakho-ke, ngesidingo esandayo sokuhlanganiswa kwe-optoelectronic, ama-waveguide ahlanganiswe ne-InGaAs photodetectors asebenza kahle kakhulu futhi alungele ukuhlanganiswa kancane kancane abe okugxilwe kuwo ocwaningweni. Phakathi kwazo, amamojula we-InGaAs we-photodetector we-70GHz kanye ne-110GHz cishe wonke amukela izakhiwo zokuhlanganisa i-waveguide. Ngokomehluko wezinto ezisetshenziswa ngaphansi kwe-substrate, ama-photodetectors e-waveguide ahlanganiswe ne-InGaAs angahlukaniswa ikakhulukazi ngezinhlobo ezimbili: I-INP-based kanye ne-Si-based. I-epitaxial ebalulekile kuma-substrates e-InP inekhwalithi ephezulu futhi ifaneleka kakhulu ukwenziwa kwamadivayisi asebenza kahle kakhulu. Kodwa-ke, ezintweni zeqembu le-III-V ezikhuliswe noma ezihlanganiswe kuma-substrates e-Si, ngenxa yokungafani okuhlukahlukene phakathi kwezinto ze-InGaAs nama-Si substrates, into ephathekayo noma ikhwalithi yesixhumi esibonakalayo imbi kakhulu, futhi sisekhona isikhala esikhulu sokuthuthukiswa ekusebenzeni kwamadivayisi.

Idivayisi isebenzisa i-InGaAsP esikhundleni se-InP njengomsebenzi wesifunda sokuncipha. Nakuba yehlisa isivinini sokukhukhuleka sokugcwala kwesikhala sama-electron ngokwezinga elithile, ithuthukisa ukuhlangana kokukhanya kwesigameko ukusuka kumhlahlandlela wamagagasi kuya endaweni yokumuncwa. Ngesikhathi esifanayo, isendlalelo sokuxhumana sohlobo lwe-InGaAsP N siyasuswa, futhi igebe elincane lenziwa ohlangothini ngalunye lwe-P-type surface, kuthuthukisa ngokuphumelelayo ukuvinjelwa ensimini yokukhanya. Ivumela idivayisi ukuthi izuze ukuphendula okuphezulu.