I-photodetector ye-avalanche ye-infrared ephansi

I-infrared engaphansi komkhawulo ophansiumshini wokuthola izithombe we-avalanche

I-photodetector ye-infrared avalanche (Isitholi sezithombe se-APD) iyisigaba seamadivayisi e-semiconductor photoelectricezikhiqiza inzuzo ephezulu ngomphumela we-collision ionization, ukuze kufezwe ikhono lokubona ama-photon ambalwa noma ngisho nama-photon angawodwa. Kodwa-ke, ezakhiweni ze-APD photodetector ezivamile, inqubo yokusabalala kwe-non-equilibrium carrier iholela ekulahlekelweni kwamandla, kangangokuthi i-avalanche threshold voltage ngokuvamile idinga ukufinyelela ku-50-200 V. Lokhu kubeka izidingo eziphakeme ku-drive voltage yedivayisi kanye nomklamo wesekethe yokufunda, okwandisa izindleko futhi kukhawulele izinhlelo zokusebenza ezibanzi.

Muva nje, ucwaningo lwaseShayina luphakamise isakhiwo esisha se-avalanche eduze komtshina we-infrared one-voltage ephansi ye-avalanche threshold kanye nokuzwela okuphezulu. Ngokusekelwe ku-homojunction ye-self-doping yengqimba ye-athomu, i-avalanche photodetector ixazulula ukuhlakazeka okulimazayo okubangelwa yisimo se-interface defect okungenakugwenywa ku-heterojunction. Okwamanje, insimu kagesi enamandla yendawo "yesiqongo" ebangelwa ukuqhekeka kokuvumelanisa kokuhumusha isetshenziselwa ukuthuthukisa ukusebenzisana kwe-coulomb phakathi kwabathwali, ukucindezela ukuhlakazeka okuphethwe yimodi ye-phonon engaphandle kwendiza, kanye nokufeza ukusebenza kahle okuphindwe kabili kwabathwali abangebona abalingani. Ezingeni lokushisa legumbi, amandla omkhawulo aseduze nomkhawulo wethiyori Isib (Isib igebe lebhendi le-semiconductor) kanye nokuzwela kokutholwa komtshina we-avalanche we-infrared kufinyelela ezingeni le-photon eliyi-10000.

Lolu cwaningo lusekelwe ku-homojunction ye-tungsten diselenide (WSe₂) ye-athomu-layer self-doped (i-two-dimensional transition metal chalcogenide, TMD) njenge-gain medium ye-avalanches ye-charge carrier. Ukuqhekeka kokuvumelanisa kwendawo kufezwa ngokuklama i-topography step mutation ukuze kubangele insimu kagesi "ye-spike" yendawo eqinile esibonakalayo se-mutant homojunction.

Ngaphezu kwalokho, ukujiya kwe-athomu kungacindezela indlela yokuhlakazeka elawulwa yimodi ye-phonon, futhi kuqaphele inqubo yokusheshisa nokuphindaphinda kwenkampani engeyona eyokulingana ngokulahlekelwa okuphansi kakhulu. Lokhu kuletha amandla omkhawulo we-avalanche ekushiseni kwegumbi eduze komkhawulo wethiyori okungukuthi i-bandgap yezinto ze-semiconductor Isib. I-voltage yomkhawulo we-avalanche yehlisiwe kusuka ku-50 V kuya ku-1.6 V, okuvumela abacwaningi ukuthi basebenzise amasekethe edijithali avuthiwe aphansi ukuze baqhube i-avalanche.umshini wokuthola izithombekanye nama-drive diode nama-transistors. Lolu cwaningo luqaphela ukuguqulwa okuphumelelayo kanye nokusetshenziswa kwamandla okuthwala angewona ukulingana ngokuklama umphumela wokuphindaphinda kwe-avalanche ongaphansi komkhawulo ophansi, okunikeza umbono omusha wokuthuthukiswa kwesizukulwane esilandelayo sobuchwepheshe bokuthola i-infrared ye-avalanche obuzwela kakhulu, obuphansi kanye nobukhulu be-gain.