Isingeniso ku-laser ye-semiconductor ekhipha ubuso obuqondile (i-VCSEL)

Isingeniso ekukhipheni komgodi oqondile ebuswenii-laser ye-semiconductor(VCSEL)
Ama-laser akhipha ubuso angaphandle aqondile akhiwe maphakathi nawo-1990 ukuze kunqotshwe inkinga ebalulekile ebilokhu ihlupha ukuthuthukiswa kwama-laser e-semiconductor avamile: indlela yokukhiqiza imiphumela ye-laser enamandla aphezulu enekhwalithi ephezulu ye-beam kwimodi eyisisekelo eguquguqukayo.
Ama-laser akhipha ubuso angaphandle aqondile (ama-Vecsels), aziwa nangokuthiama-laser e-disc e-semiconductor(SDL), ziyilungu elisha lomndeni we-laser. Ingaklama ubude be-emission ngokushintsha ukwakheka kwezinto kanye nobukhulu bomthombo we-quantum ku-semiconductor gain medium, futhi kuhlanganiswe nokuphindaphinda kwemvamisa yangaphakathi kungamboza ububanzi be-wavelength kusukela ku-ultraviolet kuya ku-far infrared, kufinyelele ekuphumeni kwamandla aphezulu ngenkathi kugcinwa ukuhlukahluka okuphansi. I-Angle circular symmetric laser beam. I-laser resonator yakhiwe ngesakhiwo se-DBR esingezansi se-gain chip kanye nesibuko sokuxhumanisa sokukhipha sangaphandle. Lesi sakhiwo esiyingqayizivele se-resonator sangaphandle sivumela izinto ezibonakalayo ukuthi zifakwe emgodini ukuze kusebenze imisebenzi efana nokuphindaphinda kwemvamisa, umehluko wemvamisa, kanye nokukhiya imodi, okwenza i-VECSEL ibe yinto ekahle.umthombo we-laserkwezicelo ezisukela ku-biophotonics, i-spectroscopy,umuthi we-laser, kanye nokuhlolwa kwe-laser.
I-resonator ye-VC-surface ekhipha i-semiconductor laser iqonde ngqo endizeni lapho indawo esebenzayo ikhona, futhi ukukhanya kwayo okukhiphayo kuqonde ngqo endaweni esebenzayo, njengoba kuboniswe esithombeni. I-VCSEL inezinzuzo ezihlukile, njengosayizi omncane, imvamisa ephezulu, ikhwalithi enhle yemisebe, umkhawulo omkhulu womonakalo womphezulu, kanye nenqubo yokukhiqiza elula. Ibonisa ukusebenza okuhle kakhulu ekusetshenzisweni kwesibonisi se-laser, ukuxhumana kwe-optical kanye newashi le-optical. Kodwa-ke, ama-VCsels awakwazi ukuthola ama-laser anamandla aphezulu ngaphezu kwezinga le-watt, ngakho-ke awakwazi ukusetshenziswa emasimini anezidingo zamandla aphezulu.

I-resonator ye-laser ye-VCSEL yakhiwe nge-distributed Bragg reflector (DBR) eyakhiwe ngesakhiwo se-epitaxial esinezingqimba eziningi sezinto ze-semiconductor ezinhlangothini zombili eziphezulu nangaphansi zesifunda esisebenzayo, okuhluke kakhulu ku-i-laseri-resonator eyakhiwe nge-cleavage plane ku-EEL. Isiqondiso se-VCSEL optical resonator siqonde ngqo ebusweni be-chip, umphumela we-laser nawo uqonde ngqo ebusweni be-chip, futhi ukubonakaliswa kwezinhlangothi zombili ze-DBR kuphakeme kakhulu kunokwendiza yesisombululo se-EEL.
Ubude be-resonator ye-laser ye-VCSEL ngokuvamile bungama-microns ambalwa, okuyinto encane kakhulu kune-resonator ye-millimeter ye-EEL, futhi inzuzo yendlela eyodwa etholakala ngokuzulazula kwensimu ye-optical emgodini iphansi. Nakuba umphumela oyisisekelo wemodi eguquguqukayo ungatholakala, amandla okukhipha angafinyelela ama-milliwatts amaningana kuphela. Iphrofayili yesigaba esiphambene somsebe we-laser okukhipha i-VCSEL iyindilinga, futhi i-Angle yokwehluka incane kakhulu kuneyomsebe we-laser okhipha umkhawulo. Ukuze kufezwe umphumela wamandla aphezulu we-VCSEL, kuyadingeka ukwandisa isifunda esikhanyayo ukuze kunikezwe inzuzo eyengeziwe, futhi ukwanda kwesifunda esikhanyayo kuzokwenza i-laser ekhiphayo ibe umphumela wemodi eminingi. Ngesikhathi esifanayo, kunzima ukufeza umjovo wamanje ofanayo esifundeni esikhulu esikhanyayo, futhi umjovo wamanje ongalingani uzokhulisa ukuqongelela kokushisa okulahliwe. Ngamafuphi, i-VCSEL ingakhipha indawo eyisisekelo eyindilinga ehambisanayo ngomklamo wesakhiwo onengqondo, kodwa amandla okukhipha aphansi lapho umphumela uyimodi eyodwa. Ngakho-ke, ama-VCsel amaningi avame ukuhlanganiswa kwimodi yokukhipha.