Isingeniso ku-vertical cavity surface emitting semiconductor laser (VCSEL)

Isingeniso sokuphuma komgodi ome mpoI-semiconductor laser(VCSEL)
Ama-lasers aphuma ngaphandle amile aphuma phezulu athuthukiswa maphakathi nawo-1990s ukuze kunqotshwe inkinga esemqoka eye yahlupha ukuthuthukiswa kwama-semiconductor lasers endabuko: indlela yokukhiqiza imiphumela ye-laser enamandla amakhulu enekhwalithi ephezulu ye-boam kumodi eyisisekelo eguquguqukayo.
Amalaser angaphandle aphumayo amile (Vecsels), aziwa nangokuthii-semiconductor disc lasers(SDL), bayilungu elisha lomndeni we-laser. Ingakwazi ukuklama i-wavelength ekhishwayo ngokushintsha ukwakheka kwezinto ezibonakalayo nokuqina kwe-quantum kahle ku-semiconductor gain medium, futhi kuhlanganiswe nokuphindaphindwa kwe-intracavity frequency kungamboza ububanzi be-wavelength ukusuka ku-ultraviolet kuye kwe-infrared ekude, ithole ukuphuma kwamandla aphezulu kuyilapho igcina ukuhlukana okuphansi I-Angle circular symmetric laser beam. I-laser resonator yenziwe ngesakhiwo esiphansi se-DBR se-chip yenzuzo kanye nesibuko sokuhlanganisa esiphuma ngaphandle. Lesi sakhiwo esiyingqayizivele se-resonator yangaphandle sivumela izinto ezibonakalayo ukuthi zifakwe emgodini ukuze kusetshenziswe imisebenzi efana nokuphindaphinda kabili, umehluko wemvamisa, nokukhiya imodi, okwenza i-VECSEL ibe yinto ekahle.umthombo we-laserngezicelo ezisukela ku-biophotonics, spectroscopy,umuthi we-laser, kanye ne-laser projection.
I-resonator ye-VC-surface emit semiconductor laser i-perpendicular endizeni lapho isifunda esisebenzayo sikhona, futhi ukukhanya kwayo okuphumayo kuhambisana nendiza yesifunda esisebenzayo, njengoba kuboniswe kumfanekiso.VCSEL inezinzuzo eziyingqayizivele, njengobukhulu obuncane, imvamisa ephezulu, ikhwalithi enhle ye-beam, umkhawulo wokulimala kwendawo enkulu, kanye nenqubo yokukhiqiza elula. Ibonisa ukusebenza okuhle kakhulu ekusetshenzisweni kwesibonisi se-laser, ukuxhumana okubonakalayo kanye newashi lokukhanya. Kodwa-ke, ama-VCsels awakwazi ukuthola ama-lasers anamandla aphezulu ngaphezu kwezinga le-watt, ngakho awakwazi ukusetshenziswa ezindaweni ezinezidingo zamandla aphezulu.

I-laser resonator ye-VCSEL yenziwe nge-Bragg reflector (DBR) esabalalisiwe eyakhiwe nge-multi-layer epitaxial structure ye-semiconductor material kuzo zombili izinhlangothi ezingaphezulu neziphansi zesifunda esisebenzayo, esihluke kakhululaseri-resonator eyenziwe ngendiza ye-cleavage e-EEL. Ukuqondiswa kwe-VCSEL optical resonator kuncike endaweni ye-chip, ukuphuma kwe-laser nakho ku-perpendicular ebusweni be-chip, futhi ukubukeka kwezinhlangothi zombili ze-DBR kuphakeme kakhulu kunendiza yesisombululo se-EEL.
Ubude be-laser resonator ye-VCSEL ngokuvamile bungama-microns ambalwa, amancane kakhulu kunalowo we-millimeter resonator ye-EEL, futhi inzuzo yendlela eyodwa etholwe i-optical field oscillation emgodini iphansi. Nakuba okukhiphayo okuyisisekelo kwemodi eguquguqukayo kungafinyelelwa, amandla okukhiphayo angafinyelela kuma-milliwatt ambalwa kuphela. Iphrofayela ye-cross-section ye-laser ephumayo ye-VCSEL iyisiyingi, futhi i-engeli yokuhlukana incane kakhulu kunaleyo yomugqa we-laser okhipha onqenqemeni. Ukuze uzuze ukukhishwa kwamandla aphezulu we-VCSEL, kuyadingeka ukwandisa isifunda esikhanyayo ukuze unikeze inzuzo eyengeziwe, futhi ukwanda kwesifunda esikhanyayo kuzobangela i-laser ephumayo ibe okukhiphayo kwemodi eminingi. Ngesikhathi esifanayo, kunzima ukufeza umjovo wamanje ofanayo endaweni enkulu ekhanyayo, futhi umjovo wamanje ongalingani uzothuthukisa ukuqoqwa kokushisa kwemfucuza.Ngamafuphi, i-VCSEL ingakwazi ukukhipha imodi eyisisekelo indawo eyindilinga eyindilinga ngokuklama kwesakhiwo esinengqondo, kodwa amandla okukhiphayo aphansi uma okukhiphayo kuyimodi eyodwa.Ngakho-ke, amamodeli amaningi we-VCsel avame ukuhlanganiswa kumodi yokukhipha.