Isingeniso ku-vertical cavity surface emitting semiconductor laser (VCSEL)

Isingeniso sokuphuma komgodi ome mpoI-semiconductor laser(VCSEL)
Ama-lasers aphuma ngaphandle amile aphuma phezulu athuthukiswa maphakathi nawo-1990s ukuze kunqotshwe inkinga esemqoka eye yahlupha ukuthuthukiswa kwama-semiconductor lasers endabuko: indlela yokukhiqiza imiphumela ye-laser enamandla amakhulu enekhwalithi ephezulu ye-boam kumodi eyisisekelo eguquguqukayo.
Amalaser angaphandle aphumayo amile (Vecsels), aziwa nangokuthii-semiconductor disc lasers(SDL), bayilungu elisha lomndeni we-laser. Ingakwazi ukuklama i-wavelength ekhishwayo ngokushintsha ukwakheka kwezinto ezibonakalayo kanye nokuqina kwe-quantum kahle ku-semiconductor gain medium, futhi kuhlanganiswe nokuphindaphinda kabili kwe-intracavity kungamboza ububanzi be-wavelength ukusuka ku-ultraviolet kuya kude ne-infrared, ifinyelele amandla aphezulu ngenkathi igcina ukuhlukana okuphansi. I-Angle circular symmetric laser beam. I-laser resonator yenziwe ngesakhiwo esingaphansi se-DBR se-chip yenzuzo nesibuko sokuhlanganisa esiphuma ngaphandle. Lesi sakhiwo esiyingqayizivele se-resonator yangaphandle sivumela izinto ezibonakalayo ukuthi zifakwe emgodini ukuze kusetshenziswe imisebenzi efana nokuphindaphinda kabili, umehluko wemvamisa, nokukhiya imodi, okwenza i-VECSEL ibe yinto ekahle.umthombo we-laserngezicelo ezisukela ku-biophotonics, spectroscopy,umuthi we-laser, kanye ne-laser projection.
I-resonator ye-VC-surface emit semiconductor laser i-perpendicular endizeni lapho isifunda esisebenzayo sikhona, futhi ukukhanya kwayo okuphumayo ku-perpendicular endizeni yesifunda esisebenzayo, njengoba kuboniswe esithombeni.VCSEL inezinzuzo eziyingqayizivele, njengezincane usayizi, imvamisa ephezulu, ikhwalithi enhle ye-beam, umkhawulo omkhulu wokulimala kwendawo, kanye nenqubo yokukhiqiza elula. Ibonisa ukusebenza okuhle kakhulu ekusetshenzisweni kwesibonisi se-laser, ukuxhumana okubonakalayo kanye newashi lokukhanya. Kodwa-ke, ama-VCsels awakwazi ukuthola ama-laser anamandla aphezulu ngaphezu kwezinga le-watt, ngakho awakwazi ukusetshenziswa ezindaweni ezinezidingo zamandla aphezulu.

I-laser resonator ye-VCSEL yenziwe nge-Bragg reflector (DBR) esabalalisiwe eyakhiwe nge-multi-layer epitaxial structure ye-semiconductor material kuzo zombili izinhlangothi ezingaphezulu neziphansi zesifunda esisebenzayo, esihluke kakhululaseri-resonator eyenziwe ngendiza ye-cleavage e-EEL. Ukuqondiswa kwe-VCSEL optical resonator kuncike endaweni ye-chip, ukuphuma kwe-laser nakho ku-perpendicular ebusweni be-chip, futhi ukubukeka kwezinhlangothi zombili ze-DBR kuphakeme kakhulu kunendiza yesisombululo se-EEL.
Ubude be-laser resonator ye-VCSEL ngokuvamile bungama-microns ambalwa, amancane kakhulu kunalowo we-millimeter resonator ye-EEL, futhi inzuzo yendlela eyodwa etholwe i-optical field oscillation emgodini iphansi. Nakuba okukhiphayo okuyisisekelo kwemodi eguquguqukayo kungafinyelelwa, amandla okukhiphayo angafinyelela kuma-milliwatt ambalwa kuphela. Iphrofayela ye-cross-section ye-laser ephumayo ye-VCSEL iyisiyingi, futhi i-engeli yokuhlukana incane kakhulu kunaleyo yomugqa we-laser okhipha onqenqemeni. Ukuze uzuze ukukhishwa kwamandla aphezulu we-VCSEL, kuyadingeka ukwandisa isifunda esikhanyayo ukuze unikeze inzuzo eyengeziwe, futhi ukwanda kwesifunda esikhanyayo kuzobangela i-laser ephumayo ibe okukhiphayo kwemodi eminingi. Ngesikhathi esifanayo, kunzima ukuzuza umjovo wamanje ofanayo endaweni enkulu ekhanyayo, futhi umjovo wamanje ongalingani uzokwandisa ukuqoqwa kokushisa kwemfucuza. amandla okukhiphayo aphansi uma okukhiphayo kuyimodi eyodwa.Ngakho-ke, ama-VCsels amaningi avame ukuhlanganiswa kumodi yokukhipha.