Isingeniso se-Edge Emitting Laser (EEL)

Isingeniso se-Edge Emitting Laser (EEL)
Ukuze uthole ukukhishwa kwe-laser ye-semiconductor yamandla aphezulu, ubuchwepheshe bamanje buwukusebenzisa isakhiwo esikhipha umphetho. I-resonator ye-edge-emitting semiconductor laser yenziwe nge-natural dissociation surface ye-semiconductor crystal, futhi i-beam ephumayo ikhishwa kusukela ekupheleni kwe-laser.I-laser ekhishwayo enqenqemeni yohlobo lwe-semiconductor ingafinyelela ukukhishwa kwamandla aphezulu, kodwa indawo yayo ephumayo i-elliptical, ikhwalithi ye-beam impofu, futhi isistimu yokumisa idinga ukulolongwa ngendlela yomugqa.
Umdwebo olandelayo ubonisa ukwakheka kwe-laser ye-semiconductor ephuma emaphethelweni. I-Optical cavity ye-EEL ihambisana nobuso be-chip ye-semiconductor futhi ikhipha i-laser emaphethelweni e-semiconductor chip, ekwazi ukubona ukuphuma kwe-laser ngamandla aphezulu, isivinini esikhulu nomsindo ophansi. Kodwa-ke, ukuphuma kwe-laser beam nge-EEL ngokuvamile kune-asymmetric beam cross section kanye nokuhlukana okukhulu kwe-angular, futhi ukusebenza kahle kokuhlanganisa nge-fiber noma ezinye izinto ezibonakalayo kuphansi.

Ukwenyuka kwamandla okukhipha e-EEL kukhawulwe ukunqwabelana kokushisa kwemfucuza endaweni esebenzayo kanye nokulimala kokubona endaweni ye-semiconductor. Ngokwandisa indawo ye-waveguide ukuze kuncishiswe ukunqwabelana kokushisa kwemfucuza endaweni esebenzayo ukuze kuthuthukiswe ukushiswa kokushisa, okwandisa indawo yokukhanya okukhiphayo ukuze kuncishiswe ukuminyana kwamandla okukhanya kwegongolo ukuze kugwenywe ukulimala kokubona, amandla okukhiphayo afinyelela kuma-milliwatts angamakhulu amaningana angafinyelelwa ku-single transverse mode waveguide structure.
Nge-waveguide engu-100mm, i-laser eyodwa ekhipha umphetho ingafinyelela amashumi ama-watts wamandla okukhiphayo, kodwa ngalesi sikhathi i-waveguide inemodi eminingi kakhulu endizeni ye-chip, kanye ne-aspect ratio ye-beam ephumayo nayo ifinyelela ku-100:1, edinga uhlelo oluyinkimbinkimbi lokubumba uhlaka.
Emcabangweni wokuthi akukho ukuphumelela okusha kubuchwepheshe bezinto ezibonakalayo kanye nobuchwepheshe bokukhula kwe-epitaxial, indlela eyinhloko yokuthuthukisa amandla okukhiphayo we-chip eyodwa ye-semiconductor laser iwukukhuphula ububanzi bomugqa wesifunda esikhanyayo se-chip. Kodwa-ke, ukukhulisa ububanzi be-strip phezulu kakhulu kulula ukukhiqiza i-oscillation yemodi ye-oda eliphezulu ephambanayo kanye ne-oscillation efana ne-filament, okuzonciphisa kakhulu ukufana kokuphuma kokukhanya, futhi amandla okukhiphayo awakhuli ngokulingana nobubanzi be-strip, ngakho-ke amandla okukhiphayo we-chip eyodwa alinganiselwe kakhulu. Ukuze kuthuthukiswe kakhulu amandla okukhiphayo, ubuchwepheshe bohlelo luyavela. Ubuchwepheshe buhlanganisa amayunithi e-laser amaningi endaweni engaphansi efanayo, ukuze iyunithi ngayinye ekhipha ukukhanya ikleliswe njengohlelo olunohlangothi olulodwa endaweni ye-eksisi ehamba kancane, inqobo nje uma ubuchwepheshe bokuhlukanisa ukukhanya busetshenziselwa ukuhlukanisa iyunithi ngayinye ekhipha ukukhanya ku-array, ukuze ingaphazamisi enye nenye, yenze i-multi-aperture lasing, ungakwazi ukukhulisa inani elihlanganisiwe le-chip ephumayo. Le chip ye-laser semiconductor iyi-semiconductor laser array (LDA) chip, eyaziwa nangokuthi ibha ye-laser semiconductor.