Isingeniso se-Edge Emitting Laser (EEL)

Isingeniso se-Edge Emitting Laser (EEL)
Ukuze uthole ukukhishwa kwe-laser ye-semiconductor yamandla aphezulu, ubuchwepheshe bamanje buwukusebenzisa isakhiwo esikhipha umphetho. I-resonator ye-edge-emitting semiconductor laser yenziwe nge-natural dissociation surface ye-semiconductor crystal, futhi i-beam ephumayo iphuma ekugcineni kwe-laser. indawo okukhiphayo i-elliptical, ikhwalithi ye-beam impofu, futhi umumo we-beam udinga ukuguqulwa ngesistimu yokubunjwa kwe-beam.
Umdwebo olandelayo ubonisa ukwakheka kwe-laser ye-semiconductor ephuma emaphethelweni. I-Optical cavity ye-EEL ihambisana nobuso be-chip ye-semiconductor futhi ikhipha i-laser emaphethelweni e-semiconductor chip, ekwazi ukubona ukuphuma kwe-laser ngamandla aphezulu, isivinini esikhulu nomsindo ophansi. Kodwa-ke, ukuphuma kwe-laser beam nge-EEL ngokuvamile kune-asymmetric beam cross section kanye nokuhlukana okukhulu kwe-angular, futhi ukusebenza kahle kokuhlanganisa nge-fiber noma ezinye izinto ezibonakalayo kuphansi.

Ukwenyuka kwamandla okukhipha e-EEL kukhawulwe ukunqwabelana kokushisa kwemfucuza endaweni esebenzayo kanye nokulimala kokubona endaweni ye-semiconductor. Ngokwandisa indawo ye-waveguide ukunciphisa ukuqoqwa kokushisa kwemfucuza endaweni esebenzayo ukuze kuthuthukiswe ukushabalaliswa kokushisa, ukwandisa indawo yokukhipha ukukhanya ukuze kuncishiswe ukuminyana kwamandla we-optical ugongolo ukugwema ukulimala kokubona, amandla okukhiphayo afinyelela kuma-milliwatts angamakhulu amaningana kungafinyelelwa kusakhiwo se-waveguide yemodi eyodwa ephambene.
Ku-waveguide engu-100mm, i-laser eyodwa ekhipha umphetho ingafinyelela amashumi ama-watts wamandla okukhiphayo, kodwa ngalesi sikhathi i-waveguide inemodi eminingi kakhulu endizeni ye-chip, kanye ne-aspect ratio ye-beam ephumayo nayo ifinyelela ku-100:1, edinga uhlelo oluyinkimbinkimbi lokubunjwa kwemishayo.
Emcabangweni wokuthi akukho ukuphumelela okusha kubuchwepheshe bezinto ezibonakalayo kanye nobuchwepheshe bokukhula kwe-epitaxial, indlela eyinhloko yokuthuthukisa amandla okukhiphayo we-chip eyodwa ye-semiconductor laser iwukukhuphula ububanzi bomugqa wesifunda esikhanyayo se-chip. Kodwa-ke, ukwandisa ububanzi be-strip buphakeme kakhulu kulula ukukhiqiza i-oscillation yemodi ye-oda eliphezulu eguquguqukayo kanye ne-filamentlike oscillation, okuzonciphisa kakhulu ukufana kokuphuma kokukhanya, futhi amandla okukhiphayo awakhuli ngokulingana nobubanzi be-strip, ngakho-ke amandla okukhipha i-chip eyodwa inomkhawulo ngokwedlulele. Ukuze kuthuthukiswe kakhulu amandla okukhiphayo, ubuchwepheshe bohlelo luyavela. Ubuchwepheshe buhlanganisa amayunithi e-laser amaningi endaweni engaphansi efanayo, ukuze iyunithi ngayinye ekhipha ukukhanya ikleliswe njengohlelo olunohlangothi olulodwa endaweni ye-eksisi ehamba kancane, inqobo nje uma ubuchwepheshe bokuhlukanisa obubonakalayo busetshenziselwa ukuhlukanisa iyunithi ngayinye ekhipha ukukhanya ohlwini. , ukuze bangaphazamisi omunye nomunye, bakha i-multi-aperture lasing, ungakwazi ukwandisa amandla okukhiphayo we-chip yonke ngokwandisa inani lamayunithi ahlanganisiwe akhipha ukukhanya. Le chip ye-laser semiconductor iyi-semiconductor laser array (LDA) chip, eyaziwa nangokuthi ibha ye-laser semiconductor.