Isingeniso ku-Edge Emitting Laser (EEL)

Isingeniso ku-Edge Emitting Laser (EEL)
Ukuze kutholakale umkhiqizo we-laser ye-semiconductor enamandla aphezulu, ubuchwepheshe bamanje buwukusebenzisa isakhiwo sokukhishwa komphetho. I-resonator ye-laser ye-semiconductor ekhipha umphetho yakhiwe ubuso bemvelo bokuhlukaniswa kwekristalu ye-semiconductor, futhi umphetho wokukhipha ukhishwa kusukela ekugcineni kwangaphambili kwe-laser. I-laser ye-semiconductor yohlobo lomphetho wokukhipha ingafinyelela umphumela wamandla aphezulu, kodwa indawo yayo yokukhipha iyi-elliptical, ikhwalithi yomphetho ayilungile, futhi ukuma komphetho kudinga ukuguqulwa ngohlelo lokubumba umphetho.
Umdwebo olandelayo ukhombisa isakhiwo se-laser semiconductor esikhipha unqenqema. I-optical cavity ye-EEL ihambisana nobuso be-chip ye-semiconductor futhi ikhipha i-laser emaphethelweni e-chip ye-semiconductor, engakhipha umphumela we-laser ngamandla aphezulu, isivinini esikhulu nomsindo ophansi. Kodwa-ke, umphumela we-laser beam yi-EEL ngokuvamile une-cross section ye-beam engalingani kanye nokuhlukana okukhulu kwe-angular, futhi ukusebenza kahle kokuxhuma ne-fiber noma ezinye izingxenye ze-optical kuphansi.

Ukwanda kwamandla okukhipha i-EEL kunqunyelwe ukuqongelela kokushisa kwemfucuza endaweni esebenzayo kanye nomonakalo wokukhanya ebusweni be-semiconductor. Ngokwandisa indawo ye-waveguide ukunciphisa ukuqongelela kokushisa kwemfucuza endaweni esebenzayo ukuthuthukisa ukushabalaliswa kokushisa, ukwandisa indawo yokukhipha ukukhanya ukunciphisa ubuningi bamandla okukhanya we-beam ukuze kugwenywe umonakalo wokukhanya, amandla okukhipha afinyelela kumakhulu amaningana e-milliwatts angatholakala esakhiweni se-waveguide yemodi eyodwa eguquguqukayo.
Ku-waveguide engu-100mm, i-laser eyodwa ekhipha unqenqema ingafinyelela amashumi ama-watts wamandla okukhipha, kodwa ngalesi sikhathi i-waveguide inemodi eminingi kakhulu endizeni ye-chip, futhi isilinganiso se-output beam aspect sifinyelela ku-100:1, okudinga uhlelo oluyinkimbinkimbi lokubumba i-beam.
Ngesisekelo sokuthi akukho ntuthuko entsha kubuchwepheshe bezinto ezibonakalayo kanye nobuchwepheshe bokukhula kwe-epitaxial, indlela eyinhloko yokuthuthukisa amandla okukhipha e-single semiconductor laser chip ukwandisa ububanzi be-strip esifundeni esikhanyayo se-chip. Kodwa-ke, ukwandisa ububanzi be-strip phezulu kakhulu kulula ukukhiqiza i-transverse high-order mode oscillation kanye ne-filamentlike oscillation, okuzonciphisa kakhulu ukufana kokukhipha ukukhanya, futhi amandla okukhipha awandi ngokulinganayo nobubanzi be-strip, ngakho-ke amandla okukhipha e-single chip anqunyelwe kakhulu. Ukuze kuthuthukiswe kakhulu amandla okukhipha, ubuchwepheshe be-array buyavela. Ubuchwepheshe buhlanganisa amayunithi amaningi e-laser ku-substrate efanayo, ukuze iyunithi ngayinye ekhipha ukukhanya ibekwe njenge-array enobukhulu obubodwa ohlangothini lwe-axis ehamba kancane, inqobo nje uma ubuchwepheshe bokuhlukaniswa kwe-optical busetshenziswa ukuhlukanisa iyunithi ngayinye ekhipha ukukhanya ku-array, ukuze zingaphazamisi omunye nomunye, zakha i-multi-aperture lasing, ungandisa amandla okukhipha e-chip yonke ngokwandisa inani lamayunithi akhipha ukukhanya ahlanganisiwe. Le chip ye-laser ye-semiconductor iyi-chip ye-laser array ye-semiconductor (LDA), eyaziwa nangokuthi ibha ye-laser ye-semiconductor.