ISINGENISO SOKUQHAWULA KOKUFUNDA I-LASER (EEL)
Ukuze uthole umphumela we-seconductor we-semiconductor laser, ubuchwepheshe bamanje ukusebenzisa isakhiwo sokukhipha. Umthengisi we-Semiconductor Laser ye-Edge-Emit I-Semiconductor Laser yakhelwe nge-Discocution Crystal yemvelo ye-semiconductor crystal, futhi ugongolo lokuphuma ukhishwe kusuka endaweni ephezulu ye-laser.Use-Edge-Emiss Tych semiconductor, kodwa ikhwalithi yemikhumbi imbi, futhi ukwakheka kogongolo kudinga ukuguqulwa ngohlelo lokulwa novalo.
Umdwebo olandelayo ukhombisa ukwakheka kwe-seconductor ye-semiconductor ekhishwe. I-cavity ye-optical ye-eel iyafana ebusweni be-Chip ye-semiconductor futhi ikhipha i-laser emaphethelweni we-chip semiconductor, engabona ukuphuma kwama-laser ngamandla aphezulu, ijubane eliphezulu nomsindo ophansi. Kodwa-ke, ukuphuma kwe-laser beam nge-eel ngokuvamile kunengxenye ye-asymmetric beam ye-asymmetric Beam
Ukwanda kwamandla okukhishwa kwe-eel kukhawulelwe ukunqwabelana kokushisa kwemfucuza ekwenzeni okusebenzayo kwesifunda kanye nomonakalo we-semiconductor. Ngokwengeza indawo ye-WaveGuide ukunciphisa ukunqwabelanisa kwemfucuza esifundeni esisebenzayo ukuthuthukisa ukuncipha kokushisa, ukukhulisa amandla okukhanya okuphezulu, amandla okukhipha afinyelela kumamitha angamakhulu afinyelela kumakhulu ambalwa angatholakala kwisakhiwo esisodwa se-waveGuide.
Okwe-waveguide eyi-100mm, i-laser eyodwa ekhishwe onqenqemeni ingafinyelela amashumi ama-watts of adts amandla okukhipha, kepha ngalesi sikhathi i-WaveGuide imodi ehlukahlukene endizeni ye-chip, futhi isilinganiso se-beam seam afinyelela ku-100: 1, edinga uhlelo olubumba lokwehla.
Esikhondweni sokuthi akukho mpumelelo entsha ebukhwini bezinto ezibonakalayo kanye nobuchwepheshe bokukhula kwe-Epitaxial, indlela eyinhloko yokwenza ngcono amandla okukhishwa kwe-Chip eyodwa ye-seminonductor ukwandisa isifunda se-strip ye-chip. Kodwa-ke, ukwandisa ububanzi be-strip buphezulu kakhulu kulula ukukhiqiza imodi ye-oscillation ephezulu ye-oscillation kanye ne-oscillation enjenge-filamentlike, okuzokwehlisa kakhulu ukufana kokuphuma kokukhanya, ngakho-ke amandla okukhipha awakhuphuki ngokulinganayo nobubanzi be-strip, ngakho-ke amandla okukhipha e-chip eyodwa anqunyelwe kakhulu. Ukuze uthuthukise kakhulu amandla okukhipha, ubuchwepheshe obuhle buqala ukuba bukhona. Ubuchwepheshe buhlanganisa amayunithi amaningi we-laser ku-substrate efanayo, ukuze iyunithi ngalinye lokukhipha ukukhanya lilinganiswe njengobuchwepheshe obukhulu be-axis aswing, ukuze bangaphazamiseli amandla okukhishwa kwe-axis an arring, ukuze bangezele amandla okuphuma kwe-chip ngokwandisa inani le-chip elididiyelwe amayunithi ahlangene akhipha amayunithi. Le chip ye-Semiconductor Laser i-Chip ye-Semiconductor Laser Array (LDA) Chip (LDA) chip, eyaziwa nangokuthi ibha ye-semiconductor laser.
Isikhathi sePosi: Jun-03-2024