Yethula imoduli ye-silicon photonic ye-Mach-ZendeI-MZM module
II-Mach-zende modulator iyisakhi esibaluleke kakhulu ekugcineni komthumeli kumamojula we-silicon photonic we-400G/800G. Njengamanje, kunezinhlobo ezimbili zamamoduli ekugcineni komthumeli wamamojula we-silicon photonic akhiqizwe ngobuningi: Olunye uhlobo imodulator ye-PAM4 esekelwe kumodi yokusebenza yesiteshi esisodwa engu-100Gbps, efinyelela ukudluliswa kwedatha engu-800Gbps ngendlela efanayo ye-4-channel / 8-channel futhi isetshenziswa ikakhulukazi ezikhungweni zedatha kanye ne-Gpus. Kunjalo, imojuli ye-200Gbps silicon photonics yesiteshi esisodwa se-Mach-Zeonde ezoqhudelana ne-EML ngemva kokukhiqizwa ngobuningi ku-100Gbps akufanele ibe kude. Uhlobo lwesibili iI-IQ moduleisetshenziswa ekuxhumaneni okude okuhambisanayo kokubona. Ukucwila okuhambisanayo okukhulunywe ngakho kulesi sigaba samanje kubhekisela ebangeni lokudluliselwa kwamamojula optical asukela ezinkulungwaneni zamakhilomitha kunethiwekhi ye-metropolitan backbone kuya kumamojula we-ZR optical asuka kumakhilomitha angama-80 kuye kwayi-120, ngisho namamojula optical e-LR asuka kumakhilomitha ayi-10 esikhathini esizayo.
Isimiso sejubane eliphezuluama-silicon modulatorszingahlukaniswa zibe izingxenye ezimbili: optics nogesi.
Ingxenye ye-Optical: Isimiso esiyisisekelo yi-interferometer ye-Mach-zeund. I-beam yokukhanya idlula ku-splitter ye-50-50 ye-beam futhi iba yimigqa emibili yokukhanya enamandla alinganayo, aqhubeka nokudluliselwa ezingalweni ezimbili ze-modulator. Ngokulawula kwesigaba kwesinye sezingalo (okungukuthi, inkomba ye-refractive ye-silicon iguqulwa yi-heater ukuze iguqule isivinini sokusabalalisa kwengalo eyodwa), inhlanganisela yokugcina ye-boam yenziwa ekuphumeni kwazo zombili izingalo. Ubude besigaba sokuphazanyiswa (lapho iziqongo zazo zombili izingalo zifinyelela ngesikhathi esisodwa) kanye nokukhanselwa kokuphazamiseka (lapho umehluko wesigaba ungu-90° futhi iziqongo zibhekene nemikhombe) kungafinyelelwa ngokuphazamiseka, ngaleyo ndlela kulungiswe amandla okukhanya (okungaqondwa njengo-1 no-0 kumasignali edijithali). Lokhu ukuqonda okulula futhi kuyindlela yokulawula yendawo yokusebenza emsebenzini ongokoqobo. Isibonelo, ekuxhumaneni kwedatha, sisebenza endaweni engu-3dB ephansi kunesiqongo, futhi ekuxhumaneni okuhambisanayo, sisebenza endaweni engekho ukukhanya. Kodwa-ke, le ndlela yokulawula umehluko wesigaba ngokushisa nokushisa ukuze ulawule isignali yokuphumayo ithatha isikhathi eside futhi ayikwazi ukuhlangabezana nemfuneko yethu yokudlulisa i-100Gpbs ngomzuzwana. Ngakho-ke, kufanele sithole indlela yokufeza izinga elisheshayo lokuguquguquka.
Ingxenye kagesi ngokuyinhloko iqukethe ingxenye ye-PN junction edinga ukushintsha inkomba ye-refractive kumafrikhwensi aphezulu, kanye nesakhiwo se-electrode yamagagasi ahambayo esifana nesivinini sesignali kagesi kanye nesignali yokubona. Umgomo wokushintsha inkomba ye-refractive umphumela wokuhlakazeka kwe-plasma, owaziwa nangokuthi umphumela wokuhlakazeka kwenkampani yenethiwekhi yamahhala. Kubhekiselwa kumthelela ophathekayo wokuthi uma ukugxilwa kwabathwali bamahhala kumpahla ye-semiconductor kushintsha, izingxenye zangempela nezicatshangelwayo zenkomba ye-refractive yezinto nazo zishintsha ngokufanele. Lapho ukugxilisa kwenkampani yenethiwekhi kuzinto ze-semiconductor inyuka, i-coefficient yokumuncwa yezinto iyakhula kuyilapho ingxenye yangempela yenkomba ye-refractive inhla. Ngokufanayo, lapho abathwali ezintweni ze-semiconductor behla, i-coefficient yokumuncwa iyehla kuyilapho ingxenye yangempela yenkomba ye-refractive ikhula. Ngomphumela onjalo, ekusetshenzisweni okungokoqobo, ukuguqulwa kwamasignali we-high-frequency kungafinyelelwa ngokulawula inani labathwali ku-waveguide yokudlulisela. Ekugcineni, amasignali angu-0 kanye no-1 avela endaweni yokuphumayo, alayisha amasignali kagesi wesivinini esikhulu ku-amplitude yokuqina kokukhanya. Indlela yokufeza lokhu ngokusebenzisa i-PN junction. Abathwali bamahhala be-silicon emsulwa bambalwa kakhulu, futhi ukuguqulwa kobuningi akwanele ukuhlangabezana noshintsho kunkomba ye-refractive. Ngakho-ke, kuyadingeka ukwandisa isisekelo senkampani yenethiwekhi ku-waveguide yokudlulisela nge-doping silicon ukuze kuzuzwe ushintsho kunkomba ye-refractive, ngaleyo ndlela kuzuzwe ukuguquguquka kwesilinganiso esiphezulu.
Isikhathi sokuthumela: May-12-2025