Yethula i-silicon photonic Mach-Zehnder modulator MZM modulator

Yethula i-modulator ye-silicon photonic Mach-ZehnderI-modulator ye-MZM

I-modulator ye-Mach-Zehnder iyisici esibaluleke kakhulu ekugcineni kwe-transmitter kumamojula e-400G/800G e-silicon photonic. Njengamanje, kunezinhlobo ezimbili zama-modulator ekugcineni kwe-transmitter yamamojula e-silicon photonic akhiqizwa ngobuningi: Uhlobo olulodwa yi-modulator ye-PAM4 esekelwe kwimodi yokusebenza yesiteshi esisodwa se-100Gbps, efinyelela ukudluliswa kwedatha kwe-800Gbps ngendlela efanayo yeziteshi ezine / iziteshi ezingu-8 futhi isetshenziswa kakhulu ezikhungweni zedatha kanye ne-Gpus. Vele, i-modulator ye-silicon photonics yesiteshi esisodwa ye-200Gbps Mach-Zender ezoncintisana ne-EML ngemuva kokukhiqizwa ngobuningi ku-100Gbps akufanele ibe kude. Uhlobo lwesibili yi-I-modulator ye-IQKusetshenziswa ekuxhumaneni okuqondile kwe-optical okude. Ukucwila okuqondile okukhulunywe ngakho kulesi sigaba samanje kubhekisela ebangeni lokudlulisela lamamojula e-optical asukela ezinkulungwaneni zamakhilomitha kunethiwekhi yomgogodla wedolobha kuya kumamojula e-optical e-ZR asukela kumakhilomitha angu-80 kuya kwangu-120, ngisho nakumamojula e-LR optical asukela kumakhilomitha ayi-10 esikhathini esizayo.

Umgomo wesivinini esikhuluama-modulators e-siliconingahlukaniswa izingxenye ezimbili: i-optics kanye ne-electric.

Ingxenye ye-Optical: Isimiso esiyisisekelo yi-interferometer ye-Mach-Zehnder. Ukukhanya kudlula ku-splitter yama-beam angu-50-50 bese kuba yi-beams ezimbili zokukhanya ezinamandla alinganayo, eziqhubeka nokudluliselwa ezingalweni ezimbili ze-modulator. Ngokulawula isigaba kwenye yezingalo (okungukuthi, inkomba yokukhanya ye-silicon ishintshwa yi-heater ukushintsha ijubane lokusabalala kwengalo eyodwa), inhlanganisela yokugcina yokukhanya yenziwa ekuphumeni kwezingalo zombili. Ubude besigaba sokuphazamiseka (lapho iziqongo zezingalo zombili zifika ngesikhathi esisodwa) kanye nokukhanselwa kokuphazamiseka (lapho umehluko wesigaba ungama-90° futhi iziqongo ziphambene nemisele) kungatholakala ngokuphazamiseka, ngaleyo ndlela kuguqulwa ukuqina kokukhanya (okungaqondwa njengo-1 no-0 kumasignali edijithali). Lokhu ukuqonda okulula futhi kuyindlela yokulawula yephuzu lokusebenza emsebenzini ongokoqobo. Isibonelo, ekuxhumaneni kwedatha, sisebenza endaweni engu-3dB ephansi kune-peak, futhi ekuxhumaneni okuhlangene, sisebenza endaweni engenakukhanya. Kodwa-ke, le ndlela yokulawula umehluko wesigaba ngokushisa nokusabalalisa ukushisa ukulawula isignali yokuphuma ithatha isikhathi eside kakhulu futhi ayikwazi ukuhlangabezana nesidingo sethu sokudlulisa ama-100Gpbs ngomzuzwana. Ngakho-ke, kufanele sithole indlela yokufeza izinga elisheshayo lokuguquguquka.

Ingxenye kagesi ikakhulukazi yakhiwe yisigaba se-PN junction esidinga ukushintsha inkomba yokukhanya ngesivinini esiphezulu, kanye nesakhiwo se-electrode ye-wave wave ehambayo ehambisana nesivinini sesignali kagesi kanye nesignali ye-optical. Umgomo wokushintsha inkomba yokukhanya yi-plasma dispersion effect, eyaziwa nangokuthi i-free carrier dispersion effect. Ibhekisela kumphumela ongokoqobo lapho ukuhlushwa kwabathwali abakhululekile ezintweni ze-semiconductor kushintsha, izingxenye zangempela nezicatshangelwayo zenkomba yokukhanya kwezinto nazo zishintsha ngokufanele. Lapho ukuhlushwa kwabathwali ezintweni ze-semiconductor kukhuphuka, i-absorption coefficient yezinto ezibonakalayo iyanda kuyilapho ingxenye yangempela yenkomba yokukhanya incipha. Ngokufanayo, lapho abathwali ezintweni ze-semiconductor bencipha, i-absorption coefficient iyancipha kuyilapho ingxenye yangempela yenkomba yokukhanya incipha. Ngomphumela onjalo, ekusetshenzisweni okusebenzayo, ukuguqulwa kwezimpawu zemvamisa ephezulu kungatholakala ngokulawula inani labathwali ku-transmission waveguide. Ekugcineni, izimpawu ezingu-0 no-1 zivela endaweni yokukhipha, zilayisha izimpawu zikagesi zesivinini esiphezulu ku-amplitude yokukhanya okukhulu. Indlela yokufeza lokhu iwukusebenzisa i-PN junction. Izithwali zamahhala ze-silicon emsulwa zimbalwa kakhulu, futhi ushintsho lobuningi alwanele ukuhlangabezana noshintsho ku-refractive index. Ngakho-ke, kuyadingeka ukwandisa isisekelo se-carrier ku-geographic waveguide ngokufaka i-doping ku-silicon ukuze kufezwe ushintsho ku-refractive index, ngaleyo ndlela kufezwe ukuguquguquka kwezinga eliphezulu.