Izifo ze-PhotoDeteectors eziphezulu zethulwa ngabakwa-Ingaas PhotoDetectors

Kwethulwa izifo ze-PhotoDeteector ephezuluI-Ingaas PhotoDetectors

Izifo ze-PhotoDeteectors eziphakemeEmkhakheni wokuxhumana okubona ikakhulukazi kufaka phakathi i-III-V IMAAS PhotoDeteors kanye ne-IV Full Simple Si and GE /Bheka PhotoDeteectors. Lowo owayengumtshina wendabuko oseduze we-infrared eduzane, obekubususe isikhathi eside, kanti eyokugcina ethembele ku-Silicon Optical Technology ukuba yinkanyezi ekhuphukayo, futhi kuyindawo eshisayo emkhakheni wocwaningo lwe-Optoelectronics eminyakeni yamuva. Ngaphezu kwalokho, abakwa-New Storitors ngokususelwa ku-Purovskite, izinto eziphilayo kanye nezinto ezimbili ezinezici ezimbili zikhula ngokushesha ngenxa yezinzuzo zokucubungula okulula, ukuguquguquka okuhle kanye nezakhiwo ezinhle. Kunomehluko obalulekile phakathi kwalokhu kutholwa okusha kanye nezifo ze-Inorganic zendabuko ezindaweni ezibonakalayo nezinqubo zokukhiqiza. AbakwaPelovskite bathola izici ezinhle kakhulu zokufakwa kokufakwa kokukhanya kanye namandla okuphatha afanelekile, ama-organic wezinto zokuthola impahla asetshenziswa kabanzi nge-elekthronithi yawo ephansi nama-elekthronithi aguqukayo, futhi athola izithonjana zezinto ezimbili ezihehayo ngenxa yezakhiwo zazo ezihlukile kanye nokuhamba okuphezulu. Kodwa-ke, uma kuqhathaniswa ne-Ingaas kanye ne-SI / GE Detectors, abatholi abasha basadinga ukwenziwa ngcono ngokuya ngokuqina kwesikhathi eside, ukukhiqizwa kokuvuthwa nokuhlanganiswa.

I-Ingaas ingenye yezinto ezifanelekile zokuthola isivinini esikhulu kanye nezifo eziphakeme zokuphendula. Okokuqala, i-IMAAS iyinto eqondile ye-bandgap semiconductor izinto, futhi ububanzi bawo bandgap bungalawulwa ngesilinganiso phakathi kwe-in and GA ukufezekisa ukutholwa kwama-wavelength ahlukene. Phakathi kwazo, ngo-10.53ga0.47As kufaniswe kahle ne-substrate lattice ye-INP, futhi ine-coefficial enkulu yokungena kokukhanya ku-Optical Conficial band, okuyinto esetshenziswa kabanzi lapho kulungiswaPhotoDeteectors, futhi ukusebenza okumnyama kwamanje nokuphendula nakho kungcono kakhulu. Okwesibili, ama-Ingaas kanye ne-INP izinto zokwakha zobabili zine-velocity ephezulu ye-electron drift, kanye ne-electron drift velocity yazo nge-1 × 107 cm / s. Ngasikhathi sinye, i-Ingaas kanye ne-INP izinto ze-electron velocity freenshoot ngaphansi kwensimu ethile kagesi. I-velocity ye-Overshoot ingahlukaniswa ibe yi-4 × 107cm / S kanye ne-6 × 107cm / s, okulungele ukuqaphela umkhawulokudonsa wesikhathi esilinganiselwe. Njengamanje, i-Ingaas PhotoDector iyi-photodet ebaluleke kakhulu yokuxhumana okubonakalayo, kanye nendlela yokuhlangana yezehlakalo isetshenziswa kakhulu emakethe, kanye nemikhiqizo yezehlakalo ezingama-25 ze-Gbaud / S.6 Ubukhulu obuncane, izehlakalo ezingemuva kanye nezitholi ezinkulu ze-bandwidth Sugarth Detences nazo ziye zakhiwa, ezilungele kakhulu isivinini esikhulu kanye nezicelo eziphezulu zokugcwala. Kodwa-ke, ingabe uphenyo lwezigameko ezingaphezulu lilinganiselwe yimodi yalo yokuhlanganisa futhi kunzima ukuhlanganisa namanye amadivayisi we-opoleelyronic. Ngakho-ke, ngokuthuthuka kwezidingo zokuhlanganiswa kwe-opoleelectronic, ama-waveguide ahlanganiswe ama-Ingaas PhotoDeteors asebenza kahle kakhulu futhi alungele ukuhlanganiswa kancane kancane abe wukugxilwa kocwaningo, phakathi kwawo amamojula we-Photoproprobe acishe abe yizo zonke izinhlaka ezihlanganisiwe. Ngokusho kwezinto ezihlukile zokufakwa kwezinto ezihlukene, ukuhlanganiswa kwe-waveguide coupling Ingaas kungahlukaniswa izigaba ezimbili: inp ne-SI. Izinto ze-epitaxial ku-inp substrate zinekhwalithi ephezulu futhi zilungele kakhulu ukulungiswa kwamadivayisi okusebenza okuphezulu. Kodwa-ke, ama-mismache ahlukahlukene phakathi kwe-III-V Izinto zokwakha, izinto zokwakha ze-IMAAS kanye nezindawo zokuhlinzekwa ze-SI