Ama-photodetector asheshayo angeniswa ama-photodetector e-InGaAs

Ama-photodetector esivinini esikhulu angeniswa yiIzitholi zezithombe ze-InGaAs

Ama-photodetector ashesha kakhuluemkhakheni wokuxhumana kwe-optical ikakhulukazi kuhlanganisa ama-photodetector e-III-V InGaAs kanye ne-IV full Si kanye ne-Ge/Ama-photodetector. Eyokuqala iyisitholi sendabuko esiseduze ne-infrared, ebesilokhu sibusa isikhathi eside, kanti eyesibili ithembele kubuchwepheshe be-silicon optical ukuze ibe inkanyezi ekhulayo, futhi iyindawo eshisayo emkhakheni wocwaningo lwamazwe ngamazwe lwe-optoelectronics eminyakeni yamuva nje. Ngaphezu kwalokho, izitholi ezintsha ezisekelwe ezintweni ze-perovskite, eziphilayo kanye nezinto ezinezinhlangothi ezimbili zithuthuka ngokushesha ngenxa yezinzuzo zokucubungula okulula, ukuguquguquka okuhle kanye nezakhiwo ezilungisekayo. Kunomehluko omkhulu phakathi kwalezi zitholi ezintsha kanye nezitholi ze-photodetector zendabuko ezingaphili ezakhiweni zezinto ezibonakalayo kanye nezinqubo zokukhiqiza. Izitholi ze-Perovskite zinezici ezinhle kakhulu zokumunca ukukhanya kanye nomthamo wokuthutha osebenza kahle, izitholi zezinto eziphilayo zisetshenziswa kabanzi ngama-electron azo ashibhile futhi aguquguqukayo, kanti izitholi zezinto ezinezinhlangothi ezimbili zidonsele ukunaka okukhulu ngenxa yezakhiwo zazo zomzimba ezihlukile kanye nokuhamba okuphezulu kokuthwala. Kodwa-ke, uma kuqhathaniswa nezitholi ze-InGaAs kanye ne-Si/Ge, izitholi ezintsha zisadinga ukuthuthukiswa maqondana nokuzinza kwesikhathi eside, ukuvuthwa kokukhiqiza kanye nokuhlanganiswa.

I-InGaAs ingenye yezinto ezifanelekile zokuthola ama-photodetector asheshayo kanye nempendulo ephezulu. Okokuqala, i-InGaAs iyinto eqondile ye-bandgap semiconductor, futhi ububanzi bayo be-bandgap bungalawulwa yisilinganiso esiphakathi kwe-In ne-Ga ukuze kufezwe ukutholakala kwezimpawu zokukhanya zama-wavelength ahlukene. Phakathi kwazo, i-In0.53Ga0.47As ifaniswe kahle ne-lattice ye-substrate ye-InP, futhi ine-coefficient enkulu yokumuncwa kokukhanya ebhendini yokuxhumana ye-optical, esetshenziswa kakhulu ekulungiseleleniama-photodetectors, kanye nokusebenza kokukhanya okumnyama kanye nokuphendula nakho kungcono kakhulu. Okwesibili, izinto ze-InGaAs kanye ne-InP zombili zinejubane eliphezulu lokukhukhuleka kwama-electron, futhi ijubane lazo lokukhukhuleka kwama-electron agcwele lingaba ngu-1×107 cm/s. Ngesikhathi esifanayo, izinto ze-InGaAs kanye ne-InP zinomphumela wokuqhuma kwejubane lama-electron ngaphansi kwensimu ethile kagesi. Ijubane lokukhukhuleka lingahlukaniswa libe yi-4×107cm/s kanye ne-6×107cm/s, okusiza ekufezeni i-bandwidth enkulu yesikhathi esinqunyelwe yinkampani. Njengamanje, i-InGaAs photodetector iyi-photodetector eyinhloko kakhulu yokuxhumana kwe-optical, futhi indlela yokuhlanganisa i-surface incidence isetshenziswa kakhulu emakethe, kanti imikhiqizo ye-surface incidence detector engu-25 Gbaud/s kanye ne-56 Gbaud/s iye yaqalwa. Kuye kwathuthukiswa ama-surface incidence detector amancane, i-back incidence kanye ne-bandwidth enkulu, afaneleka kakhulu kwizicelo ze-high speed kanye ne-saturation ephezulu. Kodwa-ke, i-surface incidence probe inqunyelwe yimodi yayo yokuxhuma futhi kunzima ukuyihlanganisa namanye amadivayisi e-optoelectronic. Ngakho-ke, ngokuthuthukiswa kwezidingo zokuhlanganiswa kwe-optoelectronic, ama-photodetector e-InGaAs ahlanganiswe nge-waveguide asebenza kahle kakhulu futhi afanele ukuhlanganiswa kancane kancane abe yindawo ebalulekile ocwaningweni, phakathi kwawo amamojula e-photoprobe e-InGaAs angu-70 GHz kanye ne-110 GHz cishe wonke asebenzisa izakhiwo ezihlanganisiwe ze-waveguide. Ngokusho kwezinto ezihlukene ze-substrate, i-waveguide coupling InGaAs photoelectric probe ingahlukaniswa ngezigaba ezimbili: i-InP kanye ne-Si. Izinto ze-epitaxial eziku-substrate ye-InP zinekhwalithi ephezulu futhi zifaneleka kakhulu ekulungiseleleni amadivayisi asebenza kahle kakhulu. Kodwa-ke, ukungafani okuhlukahlukene phakathi kwezinto ze-III-V, izinto ze-InGaAs kanye ne-Si substrates ezikhuliswe noma eziboshiwe kuma-substrate e-Si kuholela ekhwalithini yezinto ezibonakalayo noma yesixhumi esibonakalayo ephansi, futhi ukusebenza kwedivayisi kusenendawo enkulu yokuthuthukisa.

Ama-photodetector e-InGaAs, Ama-photodetector anesivinini esikhulu, ama-photodetector, ama-photodetector aphendula kakhulu, ukuxhumana kwe-optical, amadivayisi e-optoelectronic, ubuchwepheshe be-silicon optical


Isikhathi sokuthunyelwe: Disemba 31-2024