Ozisebenzelayo osebenza kahle kakhuluisitholi sesithombe se-infrared
i-infraredumshini wokuthola izithombeinezici zekhono eliqinile lokulwa nokuphazamiseka, ikhono eliqinile lokubona izinjongo, ukusebenza kahle kuzo zonke izimo zezulu kanye nokufihla okuhle. Idlala indima ebaluleke kakhulu emikhakheni efana nezokwelapha, ezempi, ubuchwepheshe besikhala kanye nobunjiniyela bezemvelo. Phakathi kwazo, ukuziqhubaukutholwa kwe-photoelectrici-chip engasebenza ngokuzimela ngaphandle kokunikezwa kwamandla okwengeziwe kwangaphandle idonsele ukunaka okukhulu emkhakheni wokutholwa kwe-infrared ngenxa yokusebenza kwayo okuyingqayizivele (njengokuzimela kwamandla, ukuzwela okuphezulu kanye nokuqina, njll.). Ngokuphambene nalokho, ama-chip endabuko okuthola i-photoelectric, njenge-silicon-based noma i-narrowbandgap semiconductor-based infrared chips, awadingi nje kuphela ama-voltage engeziwe okukhetha ukuze aqhube ukuhlukaniswa kwezithwali ezikhiqizwa nge-photo ukuze kukhiqizwe ama-photocurrents, kodwa futhi adinga izinhlelo zokupholisa ezengeziwe ukuze kuncishiswe umsindo wokushisa futhi kuthuthukiswe ukuphendula. Ngakho-ke, kube nzima ukuhlangabezana nemibono emisha nezidingo zesizukulwane esilandelayo sama-chip okuthola i-infrared esikhathini esizayo, njengokusetshenziswa kwamandla okuphansi, usayizi omncane, izindleko eziphansi kanye nokusebenza okuphezulu.
Muva nje, amaqembu ocwaningo avela eShayina naseSweden aphakamise i-chip entsha yokuthola i-photoelectric ye-pin heterojunction eqhutshwa ngokwayo ngamagagasi amafushane (SWIR) esekelwe kumafilimu e-graphene nanoribbon (GNR)/i-alumina/i-silicon yekristalu eyodwa. Ngaphansi komphumela ohlangene womphumela we-optical gating obangelwa yi-interface ehlukile kanye nensimu kagesi eyakhelwe ngaphakathi, i-chip ibonise impendulo ephezulu kakhulu kanye nokusebenza kokuthola ku-zero bias voltage. I-chip yokuthola i-photoelectric inesilinganiso sokuphendula esingu-A esiphezulu njengo-75.3 A/W kwimodi yokuziqhuba, isilinganiso sokutholakala esingu-7.5 × 10¹⁴ Jones, kanye nokusebenza kahle kwe-quantum yangaphandle okuseduze no-104%, okuthuthukisa ukusebenza kokuthola kohlobo olufanayo lwama-chip asekelwe ku-silicon ngama-oda angu-7 amakhulu. Ngaphezu kwalokho, ngaphansi kwemodi yokushayela evamile, izinga lokuphendula le-chip, izinga lokuthola, kanye nokusebenza kahle kwe-quantum yangaphandle konke kuphakeme njengo-843 A/W, 10¹⁵ Jones, kanye no-105% ngokulandelana, konke okuyinani eliphakeme kakhulu elibikwe ocwaningweni lwamanje. Okwamanje, lolu cwaningo luphinde lwabonisa ukusetshenziswa kwangempela kwe-chip yokuthola i-photoelectric emikhakheni yokuxhumana kwe-optical kanye ne-infrared imaging, okugqamisa amandla ayo amakhulu okusebenzisa.
Ukuze kufundwe ngokuhlelekile ukusebenza kwe-photoelectric kwe-photodetector ngokusekelwe ku-graphene nanoribbons /Al₂O₃/ single crystal silicon, abacwaningi bahlole i-static (current-voltage current) kanye nezimpendulo zayo ze-dynamic characteristic (current-time current). Ukuze bahlole ngokuhlelekile izici ze-optical response ze-graphene nanoribbon /Al₂O₃/ monocrystalline silicon heterostructure photodetector ngaphansi kwama-voltage ahlukene e-bias, abacwaningi balinganise impendulo yamanje ye-dynamic yedivayisi ku-0 V, -1 V, -3 V kanye ne-5 V biases, ngobuningi bamandla e-optical obungu-8.15 μW/cm². I-photocurrent iyanda nge-reverse bias futhi ikhombisa isivinini sempendulo esheshayo kuwo wonke ama-voltage e-bias.
Ekugcineni, abacwaningi bakha uhlelo lokuthwebula izithombe futhi baphumelela ekutholeni izithombe ezisebenza ngamandla abo ze-short-wave infrared. Uhlelo lusebenza ngaphansi kokukhetha okungenalutho futhi alusebenzisi amandla nhlobo. Amandla okuthwebula izithombe e-photodetector ahlolwe kusetshenziswa imaski emnyama enephethini kahlamvu “T” (njengoba kuboniswe kuMfanekiso 1).

Ekuphetheni, lolu cwaningo luphumelele ukukhiqiza ama-photodetector asebenza ngokwawo asekelwe kuma-nanoribhoni e-graphene futhi lwathola izinga lokuphendula eliphezulu eliphula irekhodi. Phakathi naleso sikhathi, abacwaningi babonise ngempumelelo amakhono okuxhumana nokuthwebula izithombe alokhui-photodetector ephendula kakhulu. Le mpumelelo yocwaningo ayigcini nje ngokuhlinzeka ngendlela ewusizo yokuthuthukiswa kwama-nanoribhoni e-graphene kanye namadivayisi e-optoelectronic asekelwe ku-silicon, kodwa futhi ikhombisa ukusebenza kwawo okuhle kakhulu njenge-short-wave infrared photodetectors ezisebenzisa amandla azo.
Isikhathi sokuthunyelwe: Ephreli-28-2025




