Ukusebenza okuphezulu okuzishayelayoi-infrared photodetector
i-infraredi-photodetectorinezici zekhono eliqinile lokulwa nokuphazamiseka, ikhono eliqinile lokuqaphela ithagethi, ukusebenza kwesimo sezulu sonke kanye nokufihla okuhle. Idlala indima ebaluleke kakhulu emikhakheni efana nezokwelapha, ezempi, ubuchwepheshe basemkhathini kanye nobunjiniyela bemvelo. Phakathi kwabo, ozishayelayoukutholwa kwe-photoelectrici-chip engakwazi ukusebenza ngokuzimela ngaphandle kokunikezwa kwamandla engeziwe kwangaphandle idonsele ukunaka okubanzi emkhakheni wokutholwa kwe-infrared ngenxa yokusebenza kwayo okuyingqayizivele (njengokuzimela kwamandla, ukuzwela okuphezulu nokuzinza, njll.). Ngokuphambene, ama-chips endabuko okuthola ugesi wesithombe, njengama-chips we-infrared asekelwe ku-silicon-based noma i-narrowbandgap semiconductor, awadingi nje kuphela ama-voltages angeziwe ukuze ashayele ukuhlukaniswa kwezinkampani zenethiwekhi ezikhiqizwe izithombe ukuze zikhiqize ama-photocurrents, kodwa futhi adinga amasistimu okupholisa angeziwe ukuze anciphise umsindo oshisayo futhi athuthukise ukuphendula. Ngakho-ke, kube nzima ukuhlangabezana nemibono emisha kanye nezidingo zesizukulwane esilandelayo sama-chips okubona nge-infrared esikhathini esizayo, njengokusetshenziswa kwamandla okuphansi, usayizi omncane, izindleko eziphansi nokusebenza okuphezulu.
Muva nje, amaqembu ocwaningo avela e-China nase-Sweden enze isiphakamiso se-chip ye-photoelectric ye-short-wave infrared (SWIR) ye-pin heterojunction esekelwe ku-graphene nanoribbon (GNR) films/alumina/single crystal silicon. Ngaphansi komthelela ohlanganisiwe womphumela wokubonwayo oqaliswe isixhumi esibonakalayo esingafani nendawo kagesi eyakhelwe ngaphakathi, i-chip ibonise ukusabela okuphezulu okuphezulu nokusebenza kokutholwa ku-voltage eyiziro yokuchema. I-chip yokutholwa kwe-photoelectric inezinga lokuphendula elifika ku-75.3 A/W kumodi ezishayelayo, izinga lokutholwa elingu-7.5 × 10¹⁴ Jones, kanye nokusebenza kahle kwe-quantum yangaphandle esondele ku-104%, ithuthukisa ukusebenza kokutholwa kohlobo olufanayo lwama-chip asekelwe ku-silicon ngamarekhodi ama-oda angu-7 obukhulu. Ngaphezu kwalokho, ngaphansi kwemodi evamile yokushayela, izinga lokuphendula kwe-chip, izinga lokutholwa, nokusebenza kahle kwe-quantum konke kuphezulu njengokungu-843 A/W, 10¹⁵ Jones, no-105% ngokulandelana, konke okungamanani aphakeme kakhulu abikwe ocwaningweni lwamanje. Ngaleso sikhathi, lolu cwaningo luphinde lwabonisa ukusetshenziswa komhlaba wangempela kwe-chip yokutholwa kwe-photoelectric emikhakheni yokuxhumana okubonakalayo ne-infrared imaging, okugqamisa amandla ayo amakhulu okusebenza.
Ukuze kufundwe ngokuhlelekile ukusebenza kwe-photoelectric kwe-photodetector esekelwe ku-graphene nanoribbons /Al₂O₃/ i-silicon eyodwa yekristalu, abacwaningi bahlole i-static (ijika le-voltage yamanje) kanye nezimpendulo zesici esiguqukayo (ijika lesikhathi samanje). Ukuhlola ngokuhlelekile izici zokusabela ze-graphene nanoribbon /Al₂O₃/ monocrystalline silicon heterostructure photodetector ngaphansi kwama-voltage ahlukene okuchema, abacwaningi balinganise ukuphendula kwamanje okuguquguqukayo kwedivayisi kokuthi 0 V, -1 V, -3 V kanye -5 V, ngamandla optical density μ.15 ² W8cm. I-photocurrent ikhuphuka ngokuchema okuphambene futhi ikhombisa isivinini sokuphendula esisheshayo kuwo wonke ama-voltages achemile.
Ekugcineni, abacwaningi benza uhlelo lokucabanga futhi bathola ngempumelelo isithombe esizisebenzelayo se-short-wave infrared. Uhlelo lusebenza ngaphansi kokuchema okuyiziro futhi alusebenzisi nhlobo amandla. Amandla wokuthwebula isithombe sesithwebuli sezithombe ahlolwe kusetshenziswa imaski emnyama enephethini yohlamvu “T” (njengoba kuboniswe kuMfanekiso 1).
Sengiphetha, lolu cwaningo lwenze ngempumelelo ama-photodetectors azenzela amandla ngokwawo ngokusekelwe kuma-graphene nanoribbons futhi azuza izinga lokuphendula eliphezulu eliphula irekhodi. Phakathi naleso sikhathi, abacwaningi babonise ngempumelelo ukuxhumana okubonakalayo kanye nekhono lokucabanga lokhui-photodetector esabela kakhulu. Le mpumelelo yocwaningo ayinikezi nje kuphela indlela engokoqobo yokuthuthukiswa kwama-graphene nanoribbons kanye namadivayisi we-silicon-based optoelectronic, kodwa futhi ibonisa ukusebenza kwawo okuhle kakhulu njengama-self-powered short-wave photodetectors we-infrared.
Isikhathi sokuthumela: Apr-28-2025