Ukukhetha Umthombo We-Laser Ofanelekile: I-Edge Emission Semiconductor Laser Ingxenye Yesibili

Ukukhetha OkuhleUmthombo we-Laser: I-Edge EmissionSemiconductor LaserIngxenye Yesibili

4. Isimo sokusetshenziswa kwama-laser we-semiconductor onqenqemeni
Ngenxa yobubanzi bayo be-wavelength ebanzi namandla aphezulu, ama-laser e-semiconductor aphuma emaphethelweni asetshenziswe ngempumelelo emikhakheni eminingi efana nezimoto, ukuxhumana optical kanyelaserukwelashwa. Ngokusho kweYole Developpement, isikhungo esidume umhlaba wonke socwaningo lwemakethe, imakethe ye-laser enqenqemeni yokukhipha izokhula ifinyelele ku-$7.4 billion ngo-2027, ngenani lokukhula elihlanganisiwe lonyaka elingu-13%. Lokhu kukhula kuzoqhubeka kuqhutshwa ukuxhumana kwe-optical, njengamamojula optical, ama-amplifiers, kanye nezicelo zokuzwa ze-3D zokuxhumana kwedatha nokuxhumana ngocingo. Ngezidingo ezihlukene zohlelo lokusebenza, kuthuthukiswe izikimu zesakhiwo se-EEL ezihlukene embonini, okuhlanganisa: amalaser we-Fabripero (FP) semiconductor, ama-laser we-Distributed Bragg Reflector (DBR) semiconductor lasers, ama-laser cavity (ECL) semiconductor lasers angaphandle, ama-laser we-semiconductor asabalalisiwe (I-DFB laser), amalaser e-quantum cascade semiconductor (QCL), kanye nama-laser diode wendawo ebanzi (BALD).

Ngokukhula kwesidingo sokuxhumana okubonakalayo, izinhlelo zokusebenza zokuzwa ze-3D nezinye izinkambu, isidingo sama-lasemiconductor lasers siyakhula. Ukwengeza, ama-laser we-semiconductor aphuma emaphethelweni kanye nama-laser we-semiconductor e-vertical-cavity surface-emitting nawo adlala indima ekugcwaliseni ukushiyeka komunye nomunye ezinhlelweni ezisafufusa, ezifana nalezi:
(1) Emkhakheni wezokuxhumana okubonakalayo, i-1550 nm InGaAsP/InP Distributed Feedback ( (DFB laser) EEL kanye ne-1300 nm InGaAsP/InGaP Fabry Pero EEL ivamise ukusetshenziswa ebangeni lokudlulisela elingu-2 km ukuya ku-40 km kanye nezinga lokudlulisela elifika ku- 40 Gbps Nokho, ku-60 m kuya ku-300 m amabanga okudlulisela kanye nesivinini esiphansi sokudlulisela, ama-VCsels asekelwe ku-850 nm InGaAs kanye nama-AlGaAs ahamba phambili.
(2) Ama-laser akhipha imbobo eqondile anezimfanelo zosayizi omncane kanye nobude beza obuncane, ngakho asetshenziswe kabanzi emakethe ye-elekthronikhi yabathengi, futhi ukugqama namandla ama-laser e-semiconductor akhipha unqenqema kuvula indlela yezinhlelo zokusebenza zokuzwa ukude futhi ukucubungula amandla aphezulu.
(3) Womabili ama-laser we-semiconductor akhipha onqenqemeni namalaser we-semiconductor we-cavity emile angasetshenziswa isikhathi esifushane - ne-liDAR yebanga eliphakathi ukuze kuzuzwe izinhlelo zokusebenza ezithile ezifana nokutholwa kwendawo eyimpumputhe nokusuka komzila.

5. Intuthuko yesikhathi esizayo
I-laser ekhipha i-semiconductor enqenqemeni inezinzuzo zokuthembeka okuphezulu, i-miniaturization namandla aphezulu akhanyayo, futhi inamathemba okusebenza abanzi ekuxhumaneni okubonakalayo, i-liDAR, yezokwelapha neminye imikhakha. Kodwa-ke, yize inqubo yokukhiqiza ama-laser e-semiconductor aphuma emaphethelweni isivuthiwe, ukuze kuhlangatshezwane nesidingo esikhulayo sezimakethe zezimboni nezabathengi zama-laser akhipha umphetho we-semiconductor, kuyadingeka ukuqhubeka nokwandisa ubuchwepheshe, inqubo, ukusebenza nokunye. izici zama-laser we-semiconductor aphuma emaphethelweni, okuhlanganisa: ukunciphisa ukuminyana kwesici ngaphakathi kwe-wafer; Nciphisa izinqubo zenqubo; Thuthukisa ubuchwepheshe obusha obuzothatha indawo yesondo lokugaya lendabuko kanye nezinqubo zokusika i-blade wafer ezijwayele ukwethula iziphambeko; Lungiselela ukwakheka kwe-epitaxial ukuze uthuthukise ukusebenza kahle kwe-laser ekhipha onqenqemeni; Yehlisa izindleko zokukhiqiza, njll. Ngaphezu kwalokho, ngenxa yokuthi ukukhanya okuphumayo kwe-laser ekhipha umphetho kuseceleni konqenqema lwe-laser semiconductor chip, kunzima ukufeza ukupakishwa kwe-chip yosayizi omncane, ngakho-ke inqubo yokupakisha ehlobene isadinga ukwenziwa. eqhubeka ebhodloza.