Ukukhetha Umthombo We-Laser Ofanele: I-Edge Emission Semiconductor Laser Ingxenye Yesibili

Ukukhetha Okuhle KakhuluUmthombo We-Laser: Ukukhishwa Kwe-EdgeI-Laser ye-semiconductorIngxenye Yesibili

4. Isimo sokusetshenziswa kwama-laser e-semiconductor e-edge-emission
Ngenxa yobubanzi bayo obude be-wavelength kanye namandla aphezulu, ama-laser e-semiconductor akhipha umkhawulo asetshenziswe ngempumelelo emikhakheni eminingi efana nezimoto, ukuxhumana kwe-optical kanyei-laserukwelashwa kwezokwelapha. Ngokusho kwe-Yole Developpement, i-ejensi yocwaningo lwemakethe edumile emhlabeni jikelele, imakethe ye-laser edge-to-emit izokhula ifike ku-$7.4 billion ngo-2027, ngesilinganiso sokukhula saminyaka yonke esihlanganisiwe esingu-13%. Lokhu kukhula kuzoqhubeka nokuqhutshwa ukuxhumana kwe-optical, njenge-optical modules, ama-amplifier, kanye nezinhlelo zokusebenza zokuzwa ze-3D zokuxhumana kwedatha kanye nokuxhumana ngocingo. Ngezidingo ezahlukene zohlelo lokusebenza, izinhlelo ezahlukene zokuklama isakhiwo se-EEL ziye zathuthukiswa embonini, okuhlanganisa: ama-Fabripero semiconductor lasers e-Fabripero (FP), ama-Distributed Bragg Reflector (DBR) semiconductor lasers, ama-external cavity laser semiconductor lasers (ECL), ama-distributed feedback semiconductor lasers (I-laser ye-DFB), ama-laser e-quantum cascade semiconductor (QCL), kanye nama-diode e-laser e-wide area (BALD).

Njengoba isidingo sokuxhumana okubonakalayo sikhula, izinhlelo zokusebenza zokuzwa ze-3D kanye nezinye izinkambu, isidingo sama-laser e-semiconductor naso siyakhula. Ngaphezu kwalokho, ama-laser e-semiconductor akhipha umkhawulo kanye nama-laser e-semiconductor akhipha ubuso aqondile nawo adlala indima ekugcwaliseni ukushiyeka komunye nomunye ezinhlelweni ezintsha, njenge:
(1) Emkhakheni wokuxhumana kwe-optical, i-1550 nm InGaAsP/InP Distributed Feedback ((i-DFB laser) EEL kanye ne-1300 nm InGaAsP/InGaP Fabry Pero EEL zivame ukusetshenziswa ebangeni lokudlulisa eliyi-2 km kuya ku-40 km kanye nezinga lokudlulisa elifika ku-40 Gbps. Kodwa-ke, ebangeni lokudlulisa eliyi-60 m kuya ku-300 m kanye nesivinini sokudlulisa esiphansi, ama-VCsel asekelwe kuma-InGaAs angu-850 nm nama-AlGaAs adumile.
(2) Ama-laser akhipha ubuso obuqondile anezinzuzo zobukhulu obuncane kanye nobude obuncane be-wavelength, ngakho-ke asetshenziswe kabanzi emakethe yama-elekthronikhi abathengi, futhi izinzuzo zokukhanya namandla zama-laser e-semiconductor akhipha umkhawulo zivula indlela yezinhlelo zokusebenza zokuzwa kude kanye nokucubungula amandla aphezulu.
(3) Zombili i-laser ye-semiconductor ekhipha unqenqema kanye ne-vertical cavity surface-emitting semiconductor lasers zingasetshenziswa kwi-liDAR emfushane nephakathi ukuze kufezwe izinhlelo zokusebenza ezithile ezifana nokutholwa kwezindawo ezingaboni kanye nokuhamba komzila.

5. Intuthuko yesikhathi esizayo
I-laser ye-semiconductor ekhipha umkhawulo inezinzuzo zokuthembeka okuphezulu, i-miniaturization kanye nobuningi bamandla akhanyayo aphezulu, futhi inamathemba amaningi okusetshenziswa ekuxhumaneni kwe-optical, i-liDAR, ezokwelapha kanye neminye imikhakha. Kodwa-ke, yize inqubo yokukhiqiza yama-laser e-semiconductor ekhipha umkhawulo iye yavuthwa kakhulu, ukuze kuhlangatshezwane nesidingo esikhulayo sezimakethe zezimboni kanye nabathengi bama-laser e-semiconductor ekhipha umkhawulo, kuyadingeka ukwenza ngcono ubuchwepheshe, inqubo, ukusebenza kanye nezinye izici zama-laser e-semiconductor ekhipha umkhawulo, okuhlanganisa: ukunciphisa ubuningi besici ngaphakathi kwe-wafer; Nciphisa izinqubo zenqubo; Thuthukisa ubuchwepheshe obusha ukuze kuthathelwe indawo izinqubo zokusika isondo lokugaya lendabuko kanye ne-blade wafer ezivame ukuletha amaphutha; Lungiselela isakhiwo se-epitaxial ukuze uthuthukise ukusebenza kahle kwe-laser ekhipha umkhawulo; Nciphisa izindleko zokukhiqiza, njll. Ngaphezu kwalokho, ngoba ukukhanya kokukhipha kwe-laser ekhipha umkhawulo kuseceleni komkhawulo we-laser chip ye-semiconductor, kunzima ukufeza ukupakisha kwe-chip encane, ngakho-ke inqubo yokupakisha ehlobene isadinga ukucaciswa kabanzi.