Ukukhetha umthombo we-laser ofanele: i-edge emission semiconductor laser Ingxenye Yokuqala

Ukukhetha okuhle kakhuluumthombo we-laser: i-laser ye-semiconductor emission edge
1. Isingeniso
I-laser ye-semiconductorAma-chip ahlukaniswe ngama-edge emitting laser chips (EEL) kanye nama-vertical cavity surface emitting laser chips (VCSEL) ngokwezinqubo ezahlukene zokukhiqiza zama-resonators, futhi umehluko wawo wesakhiwo uboniswe kuMfanekiso 1. Uma kuqhathaniswa ne-vertical cavity surface emitting laser, ukuthuthukiswa kobuchwepheshe be-edge emitting semiconductor laser kuvuthiwe kakhulu, kunobubanzi obukhulu be-wavelength, okuphezulu.i-electro-opticalukusebenza kahle kokuguqulwa, amandla amakhulu nezinye izinzuzo, zifaneleka kakhulu ekucutshungulweni kwe-laser, ukuxhumana kwe-optical kanye neminye imikhakha. Njengamanje, ama-laser e-semiconductor akhipha umkhawulo ayingxenye ebalulekile embonini ye-optoelectronics, futhi izinhlelo zokusebenza zawo zimboze imboni, ezokuxhumana, isayensi, abathengi, ezempi kanye nezindiza. Ngokuthuthuka kanye nentuthuko yobuchwepheshe, amandla, ukuthembeka kanye nokusebenza kahle kokuguqulwa kwamandla kwama-laser e-semiconductor akhipha umkhawulo kuye kwathuthukiswa kakhulu, futhi amathuba okusetshenziswa kwawo ayanda kakhulu.
Okulandelayo, ngizokuholela ekuqondeni ngokwengeziwe ubuhle obuyingqayizivele bokukhipha eceleniama-laser e-semiconductor.

Umfanekiso 1 (kwesobunxele) i-laser ye-semiconductor ekhipha uhlangothi kanye (kwesokudla) nomdwebo wesakhiwo se-laser ekhipha ubuso obuqondile

2. Isimiso sokusebenza se-edge emission semiconductori-laser
Isakhiwo se-laser semiconductor esikhipha unqenqema singahlukaniswa ngezingxenye ezintathu ezilandelayo: isifunda esisebenzayo se-semiconductor, umthombo wephampu kanye ne-resonator ye-optical. Ngokungafani nama-resonator ama-laser akhipha ubuso obuvundlile (akhiwe ngezibuko ze-Bragg eziphezulu nezingezansi), ama-resonator kumadivayisi e-laser e-semiconductor esikhipha unqenqema akhiwe kakhulu ngamafilimu optical kuzo zombili izinhlangothi. Isakhiwo sedivayisi ye-EEL esijwayelekile kanye nesakhiwo se-resonator kuboniswe kuMfanekiso 2. I-photon kudivayisi ye-laser ye-semiconductor esikhipha unqenqema ikhuliswa ngokukhethwa kwemodi ku-resonator, futhi i-laser yakhiwa ngendlela ehambisana nobuso be-substrate. Amadivayisi e-laser e-semiconductor esikhipha unqenqema anobubanzi obukhulu bamaza okusebenza futhi afaneleka ezinhlelweni eziningi ezisebenzayo, ngakho-ke aba ngomunye wemithombo ye-laser efanele.

Izinkomba zokuhlola ukusebenza kwama-laser e-semiconductor akhipha umkhawulo nazo ziyahambisana namanye ama-laser e-semiconductor, okuhlanganisa: (1) ubude be-laser obuncishisiwe; (2) I-Threshold current Ith, okungukuthi, ugesi lapho i-laser diode iqala khona ukukhiqiza i-laser oscillation; (3) I-Iop yamanje esebenzayo, okungukuthi, ugesi oshayelayo lapho i-laser diode ifinyelela amandla okukhipha alinganisiwe, le pharamitha isetshenziswa ekwakhiweni nasekuguqulweni kwesekethe ye-laser drive; (4) Ukusebenza kahle kwe-Slope; (5) I-Angle ye-Vertical divergence θ⊥; (6) I-Angle ye-Horizontal divergence θ∥; (7) Qapha i-Im yamanje, okungukuthi, usayizi wamanje we-chip ye-laser ye-semiconductor kumandla okukhipha alinganisiwe.

3. Inqubekela phambili yocwaningo lwe-GaAs kanye ne-GaN based edge emitting semiconductor lasers
I-laser ye-semiconductor esekelwe ezintweni ze-semiconductor ze-GaAs ingenye yobuchwepheshe be-laser ye-semiconductor obuvuthiwe kakhulu. Njengamanje, ama-laser e-semiconductor asebenzisa i-GAAS asebenzisa i-band ye-infrared (760-1060 nm) asetshenziswa kabanzi kwezentengiselwano. Njengezinto ze-semiconductor zesizukulwane sesithathu ngemuva kwe-Si ne-GaAs, i-GaN ibilokhu ikhathazekile kakhulu ocwaningweni lwesayensi kanye nemboni ngenxa yezakhiwo zayo ezinhle kakhulu zomzimba nezamakhemikhali. Ngokuthuthuka kwamadivayisi e-optoelectronic asebenzisa i-GAN kanye nemizamo yabacwaningi, ama-diode asebenzisa ukukhanya asebenzisa i-GAN kanye nama-laser asebenzisa i-edge-emitting aye athuthukiswa.