Ukukhetha umthombo we-laser ofanele: i-edge emission semiconductor laser Ingxenye Yokuqala

Ukukhetha okuhleumthombo we-laser: i-laser emission semiconductor laser
1. Isingeniso
I-laser ye-semiconductorama-chips ahlukaniswe abe ama-laser e-edge emitting chips (EEL) kanye nama-laser chips (VCSEL) onqenqemeni lwezingqimba ngokuya ngezinqubo ezihlukene zokukhiqiza zamaresonatha, futhi umehluko wawo wesakhiwo uboniswa kuMfanekiso 1. Uma kuqhathaniswa ne-laser ephumayo yomgodi oqondile, onqenqemeni. ukuthuthukiswa kobuchwepheshe be-laser ye-semiconductor sekuvuthwe kakhulu, nobubanzi be-wavelength ebanzi, buphakemei-electro-opticalukusebenza kahle kokuguqulwa, amandla amakhulu nezinye izinzuzo, ezifanele kakhulu ukucutshungulwa kwe-laser, ukuxhumana optical nezinye izinkambu. Njengamanje, ama-laser e-semiconductor akhipha umphetho ayingxenye ebalulekile yemboni ye-optoelectronics, futhi izicelo zawo zihlanganise imboni, ezokuxhumana, isayensi, abathengi, amasosha kanye ne-aerospace. Ngokuthuthuka nenqubekelaphambili yobuchwepheshe, amandla, ukwethembeka kanye nokusebenza kahle kokuguqulwa kwamandla kwama-laser e-semiconductor aphuma emaphethelweni kuye kwathuthukiswa kakhulu, futhi amathemba okusebenza kwawo aya ngokuya ebanzi.
Okulandelayo, ngizokuholela ekuqhubekeni nokwazisa ukuthandeka okuyingqayizivele kokukhipha ecelenii-semiconductor lasers.

Umfanekiso 1 (kwesokunxele) ohlangothini olukhipha i-semiconductor laser kanye (kwesokudla) nomdwebo wesakhiwo se-laser esime mpo

2. Umgomo wokusebenza we-edge emission semiconductorlaser
Isakhiwo se-laser semiconductor ephuma emaphethelweni singahlukaniswa ngezingxenye ezintathu ezilandelayo: indawo esebenzayo ye-semiconductor, umthombo wepompo kanye ne-optical resonator. Ihlukile kuma-resonator wama-laser we-cavity emitting surface (akhiwe izibuko ze-Bragg ezingaphezulu naphansi), ama-resonator kumishini ye-laser ye-semiconductor ekhipha umphetho ngokuvamile akhiwa amafilimu okubona nhlangothi zombili. Isakhiwo esivamile sedivayisi ye-EEL kanye nesakhiwo se-resonator kuboniswa kuMfanekiso 2. I-photon kudivayisi ye-laser ye-semiconductor ephuma emaphethelweni ikhuliswa ngokukhetha imodi kusithombothi, futhi i-laser yakheka ngendlela ehambisana nendawo engaphansi. Amadivaysi e-laser e-Edge-emitting semiconductor laser anezinhlobonhlobo zamaza obude obusebenzayo futhi alungele izinhlelo zokusebenza eziningi ezisebenzayo, ngakho-ke aba omunye wemithombo ye-laser efanelekile.

Izinkomba zokuhlola ukusebenza kwama-laser we-semiconductor aphuma emaphethelweni nawo ahambisana namanye ama-lasemiconductor lasers, okuhlanganisa: (1) i-laser lasing wavelength; (2) I-Threshold current Ith, okungukuthi, umsinga lapho i-laser diode iqala khona ukukhiqiza i-laser oscillation; (3) I-Iop yamanje esebenzayo, okungukuthi, amandla okushayela lapho i-laser diode ifinyelela amandla okukhiphayo alinganiselwe, le pharamitha isetshenziswa ekwakhiweni nasekuguqulweni kwesekethe ye-laser drive; (4) Ukusebenza kahle komthambeka; (5) I-engeli yokwehlukana eqondile θ⊥; (6) I-engeli yokwehlukana evundlile θ∥; (7) Gada i-Im yamanje, okungukuthi, usayizi wamanje we-semiconductor laser chip emandleni okukhiphayo alinganiselwe.

3. Inqubekelaphambili yocwaningo lwama-GaAs kanye ne-GaN based edge emitting semiconductor lasers
I-laser ye-semiconductor esekelwe ezintweni ze-GaAs semiconductor ingenye yobuchwepheshe be-laser ye-semiconductor evuthiwe kakhulu. Okwamanje, ama-lases we-semiconductor asekelwe ku-GAAS asuselwe eduze ne-infrared (760-1060 nm) asetshenziswe kabanzi kwezentengiso. Njengempahla ye-semiconductor yesizukulwane sesithathu ngemva kwe-Si nama-GaAs, i-GaN ibikhathazeke kakhulu ocwaningweni lwesayensi nezimboni ngenxa yezakhiwo zayo ezinhle kakhulu zomzimba namakhemikhali. Ngokuthuthukiswa kwemishini ye-optoelectronic esekelwe ku-GAN kanye nemizamo yabacwaningi, ama-diode aphuma ku-GAN asuselwa ku-GAN nama-laser akhipha umphetho enziwe izimboni.