Ukuqhathaniswa kwezinhlelo ze-photonic integrated circuit material

Ukuqhathaniswa kwezinhlelo ze-photonic integrated circuit material
Umfanekiso we-1 ubonisa ukuqhathaniswa kwezinhlelo ezimbili zezinto ezibonakalayo, i-indium Phosphorus (InP) ne-silicon (Si). Ukutholakala kwe-indium kwenza i-InP ibe yinto ebiza kakhulu kune-Si. Ngenxa yokuthi amasekethe asuselwa ku-silicon afaka ukukhula okuncane kwe-epitaxial, isivuno samasekethe asuselwa ku-silicon ngokuvamile siphezulu kunesesekhethi ze-InP. Kumasekhethi asuselwa ku-silicon, i-germanium (Ge), evame ukusetshenziswa kuphela kuIsithwebuli sezithombe(imitshina yokukhanya), idinga ukukhula kwe-epitaxial, kuyilapho ezinhlelweni ze-InP, ngisho namagagasi ahambayo kufanele alungiswe ukukhula kwe-epitaxial. Ukukhula kwe-Epitaxial kuvame ukuba nokuminyana kokukhubazeka okuphezulu kunokukhula kwekristalu eyodwa, okusuka ku-crystal ingot. Ama-waveguide e-InP anokwehluka okuphezulu kwenkomba ye-refractive kuphela ku-transverse, kuyilapho ama-waveguide asekelwe ku-silicon enokwehluka okuphezulu kwenkomba ye-refractive kukho kokubili okuguquguqukayo kanye ne-longitudinal, okuvumela amadivayisi asekelwe ku-silicon ukuthi afinyelele i-radio egobayo encane nezinye izakhiwo ezihlangene. I-InGaAsP inegebe eliqondile lebhendi, kuyilapho u-Si no-Ge abanalo. Ngenxa yalokhu, amasistimu we-InP wezinto ezibonakalayo aphakeme ngokusebenza kahle kwe-laser. Ama-intrinsic oxides wezinhlelo ze-InP azinzile futhi aqinile njengama-oxide angaphakathi e-Si, i-silicon dioxide (SiO2). I-Silicon iyinto enamandla kune-InP, evumela ukusetshenziswa kwamasayizi ama-wafer amakhulu, okungukuthi ukusuka ku-300 mm (maduze azothuthukiswa abe ngu-450 mm) uma kuqhathaniswa no-75 mm ku-InP. I-InPama-modulatorsngokuvamile kuncike kumphumela we-quantum-confined Stark, ozwela izinga lokushisa ngenxa yokunyakaza konqenqema lwebhendi okubangelwa izinga lokushisa. Ngokuphambene, ukuncika kwezinga lokushisa kwama-modulators asekelwe ku-silicon kuncane kakhulu.

Ubuchwepheshe be-silicon photonics ngokuvamile bubhekwa njengobufanele kuphela imikhiqizo eshibhile, yebanga elifushane, enevolumu ephezulu (izingcezu ezingaphezu kwesigidi esingu-1 ngonyaka). Lokhu kungenxa yokuthi kwamukelwa kabanzi ukuthi inani elikhulu lomthamo we-wafer liyadingeka ukusabalalisa imaski nezindleko zokuthuthukisa, nokuthiubuchwepheshe be-silicon photonicsinobubi bokusebenza obubalulekile ezinhlelweni zomkhiqizo wesifunda nedolobha nedolobha elide. Nokho, eqinisweni okuphambene kuyiqiniso. Ngezindleko eziphansi, ibanga elifushane, izinhlelo zokusebenza ezikhiqiza kakhulu, i-laser ye-vertical cavity surface-emitting laser (VCSEL) kanyei-laser eguquliwe ngqo (I-laser ye-DML) : i-laser eguquliwe ngokuqondile ibeka ingcindezi enkulu yokuncintisana, futhi ubuthakathaka bobuchwepheshe be-photonic obusekelwe ku-silicon obungakwazi ukuhlanganisa kalula ama-lasers bube yinkinga enkulu. Ngokuphambene, ku-metro, izinhlelo zokusebenza zebanga elide, ngenxa yokuncamela ukuhlanganisa ubuchwepheshe be-silicon photonics kanye nokucubungula isignali yedijithali (i-DSP) ndawonye (okuvame ukuba endaweni yokushisa okuphezulu), kunenzuzo kakhulu ukuhlukanisa i-laser. Ukwengeza, ubuchwepheshe bokubona obuhambisanayo bungakwazi ukwenza ukushiyeka kobuchwepheshe be-silicon photonics ngokwezinga elikhulu, njengenkinga yokuthi igagasi elimnyama lincane kakhulu kune-photocurrent ye-oscillator yendawo. Ngesikhathi esifanayo, akulungile futhi ukucabanga ukuthi inani elikhulu lomthamo we-wafer liyadingeka ukumboza izindleko zemaski nentuthuko, ngoba ubuchwepheshe be-silicon photonics busebenzisa ama-node osayizi abakhulu kakhulu kunama-complementary metal oxide semiconductors (CMOS) athuthuke kakhulu. ngakho-ke imaski edingekayo kanye nokusebenza kokukhiqiza kushibhile uma kuqhathaniswa.