Umphumela we-High-Power Carbide Diode kwi-Pin PhotoDetector
I-High-Power Gilico Carbide Pin Diode ibilokhu ingenye yezindawo zokushisa emkhakheni wocwaningo lwedivayisi yamandla. I-pin didoode iyi-din diode eyakhiwe nge-sandwiching ungqimba lwe-semincuctor (noma i-semiconductor enokuhlushwa okuphansi kokungcola) phakathi kwesifunda se-P + kanye nesifunda se-N +. I-I nge-PIN yisifinyezo sesiNgisi sencazelo ye- "Intrinsic", ngoba akunakwenzeka ukuba khona i-semiconductor emsulwa ngaphandle kokungcola, ngakho-ke i-Iter ye-PIN Diode kuhlelo lokusebenza ingaphezulu noma inciphiswa kancane. Njengamanje, i-Silicon Carbide PIN Dide ikakhulukazi yamukela isakhiwo se-Mesa nesakhiwo sendiza.
Lapho imvamisa yokusebenza ye-PIN DIODE idlula i-100mhhz, ngenxa yomphumela wesitoreji sabathwali abambalwa kanye nomphumela wesikhathi sokuhamba ngesendlalelo, i-diode ilahlekelwa yinto elungiselelwe kabusha futhi iba yinto yokushintshana, kanye nenani layo lokususa. Ku-zero Bias noma i-DC Reverse Bias, ukungasebenzi esifundeni se-I kuphezulu kakhulu. Ku-DC Forward Bias, iSifunda se-I siveza isimo esiphansi sokungaphandle ngenxa yokujova kwenkampani yenethiwekhi. Ngakho-ke, i-PIN DIOD ingasetshenziswa njengento eguquguqukayo yokuvimbela, emkhakheni we-microwave kanye ne-RF control, kuvame ukudingekile ukusebenzisa amadivaysi okulawulwa kwesiginali, ikakhulukazi anezindawo eziphakeme zokulawulwa kwesiginali, kodwa futhi kusetshenziswa kabanzi ekushintsheni kwesigaba, ukuguquguquka, ukukhawula kanye nemikhawulo neminye imibuthano.
I-Digh-Power Carbide Diode isetshenziswa kabanzi enkundleni yamandla ngenxa yezimpawu zayo zokumelana ne-voltage ephakeme, esetshenziswa ikakhulukazi njenge-tube ephezulu yamandla. I-Pin Diode ine-voltage ye-voltage ephakeme ephakeme, ngenxa ye-doping ephansi engiyilo ephethe i-Middle Phele i-Main Voltage Drop. Ukwandisa ubukhulu be-zone I futhi kunciphisa ukugcwala kwe-doping of zone ngikwazi ukuthuthukisa kahle i-voltage ehlehliseyo ye-pin disiode ye-PIN DIODE, kodwa i-diodi ye-sildion carbide impahla ingangenzela lokhu kushiyeka. I-Silicon Carbide izikhathi eziyi-10 Inkambu kagesi egxekile ye-Silicon, ukuze i-Silicon Carbide Diode i-Doode Gones Spire ingancipha ibe yingxenye ye-silicon carbide, lapho kuzobe kungabikho moto evuthayo ye-silicon carbide, kuzobe kungabikho izinkinga zokunciphisa ukushisa eziphakeme, kuzobe kungabikho izinkinga zokunciphisa ukushisa eziphakeme, ngakho-ke azikho izinkinga zokunciphisa ukushisa eziphakeme, ngakho-ke ngeke kube nezinkinga ezisobala zokushisa, ngakho-ke i-silicon carbide diode ibe yithuluzi elibaluleke kakhulu ku inkambu yama-elekthronikhi wamandla wanamuhla.
Ngenxa yokuvuza kwayo okuncane kakhulu okubuyiselwe emuva kanye nokuhamba okuphezulu, ama-silicon Carbide diodes anokuheha kakhulu emkhakheni wokutholwa kwe-phoneelectric. Ukuvuza okuncane kwamanje kunganciphisa amanje amnyama we-detector futhi anciphise umsindo; Ukuhamba okuphezulu kwenethiwekhi kungathuthukisa ngempumelelo ukuzwela komtshina we-silicon Carbide Pine Pinec (Pin PhotoDetor). Izici ezinamandla amakhulu weSilicon Carbide Diodes zinika amandla i-PIN DINECTORS ukuthola imithombo ekhanyayo enamandla futhi isetshenziswa kabanzi enkundleni yesikhala. I-High Power Silicon Carbide Diode inakekele ngenxa yezimpawu zayo ezinhle kakhulu, futhi ucwaningo lwayo seluthuthukiswe kakhulu.
Isikhathi sePosi: Oct-13-2023