Umthelela we-silicon carbide diode enamandla amakhulu ku-PIN Photodetector

Umthelela we-silicon carbide diode enamandla amakhulu ku-PIN Photodetector

I-PIN diode enamandla kakhulu ye-silicon carbide ibilokhu ingenye yezindawo ezishisayo emkhakheni wocwaningo lwedivayisi yamandla. I-PIN diode i-crystal diode eyakhiwe ngokuhlanganisa ungqimba lwe-intrinsic semiconductor (noma i-semiconductor enokungcola okuphansi) phakathi kwesifunda se-P+ nesifunda se-n+. I-PIN iyisifinyezo sesiNgisi sencazelo ethi "intrinsic", ngoba akunakwenzeka ukuba khona i-semiconductor emsulwa ngaphandle kokungcola, ngakho-ke ungqimba lwe-PIN lwe-PIN kuhlelo lokusebenza luxubene nenani elincane le-P. -uhlobo noma ukungcola kohlobo lwe-N. Njengamanje, i-silicon carbide PIN diode isebenzisa ukwakheka kwe-Mesa kanye nesakhiwo sendiza.

Uma imvamisa yokusebenza ye-PIN diode idlula u-100MHz, ngenxa yomphumela wokugcina wezinkampani zenethiwekhi ezimbalwa kanye nomthelela wesikhathi sokuhamba kungqimba I, i-diode ilahlekelwa umphumela wokulungisa futhi iba into evimbelayo, futhi inani layo le-impedance liyashintsha nge-voltage echema. Ku-zero bias noma i-DC reverse bias, i-impedance esifundeni se-I iphezulu kakhulu. Ku-DC ukwenzelela phambili, isifunda se-I siveza isimo esiphansi sokuvimba ngenxa yomjovo wenkampani yenethiwekhi. Ngakho-ke, i-PIN diode ingasetshenziswa njenge-impedance element eguquguqukayo, emkhakheni wokulawula i-microwave ne-RF, ngokuvamile kuyadingeka ukusebenzisa amadivaysi okushintsha ukuze kuzuzwe ukushintsha kwesignali, ikakhulukazi kwezinye izikhungo zokulawula isignali ephezulu, ama-PIN diode aphakeme kakhulu. Amandla okulawula isignali ye-RF, kodwa futhi asetshenziswa kabanzi ekushintsheni kwesigaba, ukushintshashintsha, ukukhawulela kanye nezinye izifunda.

I-silicon carbide diode enamandla amakhulu isetshenziswa kabanzi emkhakheni wamandla ngenxa yezimpawu zayo eziphakeme zokumelana nogesi, ikakhulukazi isetshenziswa njengeshubhu lokulungisa amandla aphezulu. I-PIN diode ine-voltage ehlehlayo ephezulu ehlanekezelayo eyi-VB, ngenxa yongqimba oluphansi lwe-doping i phakathi nendawo ethwele ukwehla kwe-voltage eyinhloko. Ukwandisa ubukhulu be-zone I kanye nokunciphisa ukugxila kwe-doping yendawo ngingakwazi ukuthuthukisa amandla kagesi wokuhlehla we-PIN diode, kodwa ukuba khona kwendawo ngizothuthukisa i-VF ye-voltage eya phambili ye-VF yayo yonke idivayisi kanye nesikhathi sokushintsha idivayisi. ngokwezinga elithile, futhi i-diode eyenziwe nge-silicon carbide impahla ingenza lokhu kushiyeka. I-silicon carbide izikhathi ezingu-10 ukuwohloka okubalulekile kwenkundla kagesi ye-silicon, ukuze ubukhulu be-silicon carbide diode I zone buncishiswe bube ingxenye eyodwa kweshumi yeshubhu le-silicon, kuyilapho igcina i-voltage ephezulu yokuwohloka, kuhambisana nokuhamba kahle kwe-thermal yezinto ze-silicon carbide. , ngeke kube nezinkinga ezisobala zokulahla ukushisa, ngakho-ke i-silicon carbide diode enamandla amakhulu isibe idivayisi ebaluleke kakhulu yokulungisa izinto emkhakheni wesimanje wamandla kagesi.

Ngenxa yokuvuza kwayo okuhlanekezela okuncane kakhulu okuvuza kwamanje nokuhamba kwenkampani yenethiwekhi ephezulu, ama-silicon carbide diode aheha kakhulu emkhakheni wokutholwa kwe-photoelectric. Ukuvuza okuncane kunganciphisa amandla amnyama womtshina futhi kunciphise umsindo; Ukuhamba kwenkampani yenethiwekhi ephezulu kungathuthukisa ngempumelelo ukuzwela komtshina wephinikhodi ye-silicon carbide(PIN Photodetector). Izici zamandla aphezulu we-silicon carbide diode zinika amandla izitholi ze-PIN ukuthi zithole imithombo yokukhanya enamandla futhi zisetshenziswa kakhulu endaweni yesikhala. I-silicon carbide diode yamandla aphezulu inakiwe ngenxa yezici zayo ezinhle kakhulu, futhi ucwaningo lwayo nalo selwathuthukiswa kakhulu.