Umphumela we-high-power silicon carbide diode uvuliweI-PIN Photodetector
I-PIN diode enamandla kakhulu ye-silicon carbide ibilokhu ingenye yezindawo ezishisayo emkhakheni wocwaningo lwedivayisi yamandla. I-PIN diode i-crystal diode eyakhiwe ngokuhlanganisa ungqimba lwe-intrinsic semiconductor (noma i-semiconductor enokungcola okuphansi) phakathi kwesifunda se-P+ nesifunda se-n+. I-PIN iyisifinyezo sesiNgisi sencazelo ethi "intrinsic", ngoba akunakwenzeka ukuba khona isemiconductor emsulwa ngaphandle kokungcola, ngakho-ke isendlalelo se-I se-PIN diode kuhlelo lokusebenza cishe sixutshwe nenani elincane lohlobo lwe-P noma ukungcola kohlobo lwe-N. Njengamanje, i-silicon carbide PIN diode isebenzisa ukwakheka kwe-Mesa kanye nesakhiwo sendiza.
Uma imvamisa yokusebenza ye-PIN diode idlula u-100MHz, ngenxa yomphumela wokugcina wezinkampani zenethiwekhi ezimbalwa kanye nomthelela wesikhathi sokuhamba kungqimba I, i-diode ilahlekelwa umphumela wokulungisa futhi iba into evimbelayo, futhi inani layo le-impedance liyashintsha nge-voltage echema. Ku-zero bias noma i-DC reverse bias, i-impedance esifundeni se-I iphezulu kakhulu. Ku-DC ukwenzelela phambili, isifunda se-I siveza isimo esiphansi sokuvimba ngenxa yomjovo wenkampani yenethiwekhi. Ngakho-ke, i-PIN diode ingasetshenziswa njenge-impedance element eguquguqukayo, emkhakheni wokulawula i-microwave ne-RF, ngokuvamile kuyadingeka ukusebenzisa amadivaysi okushintshanisa ukuze kuzuzwe ukushintsha kwesignali, ikakhulukazi kwezinye izikhungo zokulawula amasignali ama-high-frequency, ama-PIN diode anamandla okulawula isignali ye-RF ephakeme, kodwa futhi asetshenziswa kabanzi ekushintsheni kwesigaba, ukuguquguquka, ukukhawulela kanye nezinye izifunda.
I-silicon carbide diode enamandla amakhulu isetshenziswa kabanzi emkhakheni wamandla ngenxa yezimpawu zayo eziphakeme zokumelana nogesi, ikakhulukazi isetshenziswa njengeshubhu lokulungisa amandla aphezulu. II-PIN diodeine-voltage ehlehlayo ephezulu ehlanekezelayo eyi-VB, ngenxa yongqimba oluphansi lwe-doping i phakathi ethwele ukwehla kwamandla kagesi okuyinhloko. Ukwandisa ukushuba kwe-zone I nokunciphisa ukugxila kwe-doping yendawo ngingakwazi ukuthuthukisa amandla kagesi wokuhlehla we-PIN diode, kodwa ukuba khona kwendawo ngizothuthukisa i-VF ye-voltage eya phambili ye-VF yayo yonke idivayisi kanye nesikhathi sokushintsha idivayisi ngokwezinga elithile, futhi i-diode eyenziwe nge-silicon carbide impahla ingakwazi ukuvala lokhu kushiyeka. I-silicon carbide izikhathi ezingu-10 ukuwohloka okubalulekile kwensimu kagesi ye-silicon, ukuze ugqinsi lwe-silicon carbide diode I zone lungancishiswa lube ingxenye eyodwa kweshumi yeshubhu le-silicon, kuyilapho kugcinwa i-voltage ephezulu yokuwohloka, kuhambisana nokuhamba kahle okushisayo kwe-silicon carbide materials, ngeke kube khona izinkinga ezicacile zokuqothula ukushisa, ngakho-ke i-silicone yesimanje ye-diode ebaluleke kakhulu yensimu ye-diode inezinkinga zensimu ye-diode ebaluleke kakhulu electronics.
Ngenxa yokuvuza kwayo okuhlanekezela okuncane kakhulu okuvuza kwamanje nokuhamba kwenkampani yenethiwekhi ephezulu, ama-silicon carbide diode aheha kakhulu emkhakheni wokutholwa kwe-photoelectric. Ukuvuza okuncane kunganciphisa amandla amnyama womtshina futhi kunciphise umsindo; Ukuhamba kwenkampani yenethiwekhi ephezulu kungathuthukisa ngempumelelo ukuzwela kwe-silicon carbideUmtshina we-PIN(I-PIN Photodetector). Izici zamandla aphezulu we-silicon carbide diode zinika amandla izitholi ze-PIN ukuthi zithole imithombo yokukhanya enamandla futhi zisetshenziswa kakhulu endaweni yesikhala. I-silicon carbide diode yamandla aphezulu inakiwe ngenxa yezici zayo ezinhle kakhulu, futhi ucwaningo lwayo nalo selwathuthukiswa kakhulu.
Isikhathi sokuthumela: Oct-13-2023