Namuhla ake sibheke i-OFC2024ama-photodetectors, ehlanganisa ikakhulukazi i-GeSi PD/APD, InP SOA-PD, ne-UTC-PD.
1. I-UCDAVIS ibona i-resonant ebuthakathaka engu-1315.5nm non-symmetric Fabry-Peroti-photodetectornamandla amancane kakhulu, alinganiselwa ku-0.08fF. Uma ukuchema kungu-1V (-2V), amandla amnyama angu-0.72 nA (3.40 nA), futhi izinga lokuphendula lingu-0.93a / W (0.96a /W). Amandla okubona agcwele angu-2 mW (3 mW). Ingakwazi ukusekela ukuhlolwa kwedatha yesivinini esikhulu esingu-38 GHz.
Umdwebo olandelayo ubonisa ukwakheka kwe-AFP PD, equkethe i-waveguide ehlanganiswe ne-Ge-on-I-photodetectornge-SOI-Ge yangaphambili ye-waveguide efinyelela > imodi engu-90% ehambisana nokuhlangana nokubukeka okungu-<10%. Ingemuva liyisibonisi se-Bragg esisabalalisiwe (DBR) esinokubonisa okungu->95%. Ngomklamo owenziwe kahle we-cavity (isimo sokuhambisana nesigaba sohambo lokuya nokubuya), ukuboniswa nokudluliswa kweresonator ye-AFP kungaqedwa, okuholela ekumunceni komtshina we-Ge cishe ku-100%. Kuwo wonke umkhawulokudonsa ongu-20nm we-wavelength emaphakathi, R+T <2% (-17 dB). Ububanzi be-Ge bungu-0.6µm futhi amandla alinganiselwa ku-0.08fF.
2, i-Huazhong University of Science and Technology ikhiqize i-silicon germaniumi-avalanche photodiode, umkhawulokudonsa >67 GHz, zuza >6.6. I-SACMI-APD photodetectorisakhiwo se-transverse pipin junction senziwa endaweni yesikhulumi se-silicon optical. I-Intrinsic germanium (i-Ge) ne-silicon yangaphakathi (i-Si) isebenza njengongqimba olumunca ukukhanya kanye nongqimba oluphindwe kabili lwe-electron, ngokulandelanayo. Isifunda se-i-Ge esinobude obungu-14µm siqinisekisa ukumuncwa okwanele kokukhanya kokuthi 1550nm. Izifunda ezincane ze-i-Ge kanye ne-i-Si zisiza ekwandiseni ukuminyana kwe-photocurrent nokwandisa umkhawulokudonsa ngaphansi kwe-voltage ephezulu yokuchema. Imephu yeso ye-APD ikalwe kokuthi -10.6 V. Ngamandla okufaka okufakayo angu- -14 dBm, imephu yeso yamasignali angu-50 Gb/s kanye no-64 Gb/s OOK iboniswa ngezansi, futhi i-SNR elinganiselwe ingu-17.8 no-13.2 dB , ngokulandelana.
3. Izinsiza zikalayini we-IHP 8-inch BiCMOS zibonisa i-germaniumIsitholi sesithombe se-PDenobubanzi obuyi-fin cishe obuyi-100 nm, engakhiqiza inkambu kagesi ephakeme kakhulu kanye nesikhathi esifushane sokukhukhuleka se-photocarrier. I-Ge PD inomkhawulokudonsa we-OE ongu-265 GHz@2V@ 1.0mA DC photocurrent. Ukugeleza kwenqubo kuboniswa ngezansi. Isici esikhulu kunazo zonke ukuthi ukufakwa kwe-ion okuxubile kwe-SI kuyekwa, futhi uhlelo lokuhlanganisa ukukhula luyamukelwa ukuze kugwenywe umthelela wokufakelwa kwe-ion ku-germanium. Ubumnyama bamanje ngu-100nA,R = 0.45A/W.
4, i-HHI ikhombisa i-InP SOA-PD, ehlanganisa i-SSC, i-MQW-SOA nesithwebuli sezithombe esinesivinini esikhulu. Okweqembu le-O. I-PD inokusabela kwe-0.57 A/W engaphansi kwe-1 dB PDL, kuyilapho i-SOA-PD inokusabela kwe-24 A/W ngaphansi kwe-1 dB PDL. Umkhawulokudonsa walokhu okubili ngu-~ 60GHz, kanti umehluko we-1 GHz ungabangelwa imvamisa ye-resonance ye-SOA. Awukho umphumela wephethini obonwe esithombeni sangempela seso. I-SOA-PD inciphisa amandla okukhanya adingekayo mayelana ne-13 dB ku-56 GBaud.
5. Imishini ye-ETH yohlobo lwe-II ithuthukise i-GaInAsSb/InP UTC-PD, enomkhawulokudonsa ongu-60GHz@zero bias namandla okukhipha aphezulu angu- -11 DBM ku-100GHz. Ukuqhubeka kwemiphumela yangaphambilini, kusetshenziswa amandla okuthutha ama-electron athuthukisiwe e-GaInAsSb. Kuleli phepha, izendlalelo zokumuncwa ezithuthukisiwe zifaka i-GaInAsSb efakwe kakhulu engu-100 nm kanye ne-GaInAsSb engavuliwe engu-20 nm. Isendlalelo se-NID sisiza ukuthuthukisa ukusabela okuphelele futhi sisiza ukwehlisa umthamo wonkana wedivayisi nokuthuthukisa umkhawulokudonsa. I-64µm2 UTC-PD inomkhawulokudonsa ongu-ziro-bias ongu-60 GHz, amandla okukhiphayo angu- -11 dBm ku-100 GHz, kanye nesaturation current engu-5.5 mA. Ngokuchema okuhlanekezelwe okungu-3 V, umkhawulokudonsa ukhuphuka ube ngu-110 GHz.
6. I-Innolight isungule imodeli yokusabela yemvamisa ye-germanium silicon photodetector ngesisekelo sokucabangela ngokugcwele i-doping yedivayisi, ukusatshalaliswa kwenkundla kagesi kanye nesikhathi sokudlulisa senkampani yenethiwekhi ekhiqizwa isithombe. Ngenxa yesidingo samandla amakhulu okokufaka kanye nomkhawulokudonsa ophezulu ezinhlelweni eziningi, okokufaka okukhulu kwamandla okubona kuzobangela ukwehla komkhawulokudonsa, umkhuba ongcono kakhulu ukunciphisa ukugxiliswa kwenkampani yenethiwekhi ku-germanium ngokuklama kwesakhiwo.
7, iNyuvesi yaseTsinghua idizayine izinhlobo ezintathu ze-UTC-PD, (1) 100GHz bandwidth double drift layer (DDL) isakhiwo esinamandla okugcwala okuphezulu kwe-UTC-PD, (2) 100GHz 100GHz uhlaka lwe-double drift layer (DCL) olunokusabela okuphezulu kwe-UTC-PD , (3) 230 GHZ umkhawulokudonsa we-MUTC-PD onamandla aphezulu okugcwalisa, Ezimweni ezihlukene zohlelo lokusebenza, amandla aphezulu okugcwalisa, umkhawulokudonsa ophezulu kanye nokusabela okuphezulu kungase kube usizo esikhathini esizayo uma kungena inkathi ye-200G.
Isikhathi sokuthumela: Aug-19-2024